13th International Conference on Nitride Semiconductors, To Be Held July 7-12, 2019, Bellevue, Washington

第十三届氮化物半导体国际会议将于 2019 年 7 月 7-12 日在华盛顿贝尔维尤举行

• 批准号: 1842925
• 负责人: J. Ardie Butch Dillen
• 金额: $ 1万
• 依托单位: Materials Research Society
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1842925&HistoricalAwards=false
• 关键词: 13th; International; Conference; Nitride; Semiconductors

The proposed project seeks financial support for enhancing graduate student participation, especially those who will attend their first national meeting and those who belong to the underrepresented groups at a Conference to be held from July 7 to 12, 2019 at Bellevue Washington. The "13th International Conference on Nitride Semiconductors" will focus on a variety of III-Nitride semiconductor materials and devices. The Conference will host world-renowned experts from leading institutions around the world. An exhibition of industrial expertise related to nitride semiconductor research will also take place at the conference. The conference will foster advances in the leading research of electronic, photonic and magnetic devices. Examples of them include Light Emitting Devices (LEDs, LEDs, Laser Diodes, UV, VIS, IR); Electronic Devices (RF, THz and Power Devices); Photovoltaics, Energy Harvesting and Photo Detectors Sensors; Actuators and Acoustic Devices. Processing, Fabrication and Thermal Management; Bulk Growth; Epitaxial Growth; Nanostructures and Nano-Devices; Optical and Electronic Properties; Defect Characterization and Engineering; Structural Analysis; Theory and Simulation; and New Materials and Device Concepts will also be addressed. In addition to technical talks, the organizers have also planned several plenary talks as well as 20 invited talks and two poster sessions. There will be short 4-hour courses focused on important topics of III-N research, including X-ray diffraction of GaN-related materials and simulation and modeling of GaN LEDs and HEMTs. The conference is expected to play a key role in identifying new directions for research. Exposing the next generation of researchers to these important disciplines is critical for learning how the new science and technology of semiconductors are developing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

拟议的项目寻求财政支持，以提高研究生的参与，特别是那些谁将参加他们的第一次全国会议和那些谁属于代表性不足的群体在会议将于2019年7月7日至12日在贝尔维尤华盛顿举行。“第13届氮化物半导体国际会议”将重点讨论各种III族氮化物半导体材料和器件。会议将邀请来自世界各地领先机构的世界知名专家。与氮化物半导体研究相关的工业专业知识展览也将在会议上举行。会议将促进电子，光子和磁性器件的领先研究的进展。它们的示例包括发光器件（LED、LED、激光二极管、UV、维斯、IR）;电子器件（RF、THz和功率器件）;光致发光器件、能量收集和光检测器传感器;致动器和声学器件。 加工，制造和热管理;体生长;外延生长;纳米结构和纳米器件;光学和电子特性;缺陷表征和工程;结构分析;理论和模拟;和新材料和器件概念也将得到解决。除了技术讲座外，主办方还计划了几场全体会议，以及20场特邀讲座和两场海报会议。将有简短的4小时课程，重点是III-N研究的重要主题，包括GaN相关材料的X射线衍射以及GaN LED和HEMT的模拟和建模。预计这次会议将在确定新的研究方向方面发挥关键作用。让下一代研究人员接触这些重要学科对于了解半导体新科学和技术的发展至关重要。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。