13th International Conference on Nitride Semiconductors, To Be Held July 7-12, 2019, Bellevue, Washington

拟议中的项目寻求财政支持，以提高研究生的参与度，特别是那些将参加2019年7月7日至12日在华盛顿贝尔维尤举行的第一次全国会议的学生，以及那些属于代表性不足群体的学生。“第十三届国际氮化物半导体会议”将集中讨论各种iii -氮化物半导体材料和器件。会议将邀请来自世界各地主要机构的世界知名专家参加。此外，还将举行与氮化半导体研究相关的产业技术展示会。会议将促进电子、光子和磁性器件的领先研究进展。其中的例子包括发光器件（led, led，激光二极管，UV， VIS， IR）；电子器件（射频、太赫兹和功率器件）；光电、能量收集和光电探测器传感器；执行器和声学装置。加工、制造和热管理；大部分增长;外延生长;纳米结构和纳米器件；光学和电子特性；缺陷表征与工程；结构分析;理论与仿真；新材料和设备概念也将讨论。除了技术会谈，组织者还计划了几场全体会谈、20场邀请会谈和两场海报会议。课程将集中于III-N研究的重要主题，包括氮化镓相关材料的x射线衍射和氮化镓led和hemt的模拟和建模。预计这次会议将在确定新的研究方向方面发挥关键作用。让下一代研究人员接触这些重要学科对于了解半导体新科学和技术的发展至关重要。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

The proposed project seeks financial support for enhancing graduate student participation, especially those who will attend their first national meeting and those who belong to the underrepresented groups at a Conference to be held from July 7 to 12, 2019 at Bellevue Washington. The "13th International Conference on Nitride Semiconductors" will focus on a variety of III-Nitride semiconductor materials and devices. The Conference will host world-renowned experts from leading institutions around the world. An exhibition of industrial expertise related to nitride semiconductor research will also take place at the conference. The conference will foster advances in the leading research of electronic, photonic and magnetic devices. Examples of them include Light Emitting Devices (LEDs, LEDs, Laser Diodes, UV, VIS, IR); Electronic Devices (RF, THz and Power Devices); Photovoltaics, Energy Harvesting and Photo Detectors Sensors; Actuators and Acoustic Devices. Processing, Fabrication and Thermal Management; Bulk Growth; Epitaxial Growth; Nanostructures and Nano-Devices; Optical and Electronic Properties; Defect Characterization and Engineering; Structural Analysis; Theory and Simulation; and New Materials and Device Concepts will also be addressed. In addition to technical talks, the organizers have also planned several plenary talks as well as 20 invited talks and two poster sessions. There will be short 4-hour courses focused on important topics of III-N research, including X-ray diffraction of GaN-related materials and simulation and modeling of GaN LEDs and HEMTs. The conference is expected to play a key role in identifying new directions for research. Exposing the next generation of researchers to these important disciplines is critical for learning how the new science and technology of semiconductors are developing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.