13th International Conference on Nitride Semiconductors, To Be Held July 7-12, 2019, Bellevue, Washington

拟议的项目寻求财政支持，以加强研究生的参与，特别是那些将参加他们的第一次全国会议的人，以及那些属于代表不足的群体的人，会议将于2019年7月7日至12日在华盛顿贝尔维尤举行。第十三届国际氮化物半导体大会将集中展示各种III-氮化物半导体材料和器件。大会将接待来自世界各地领先机构的世界知名专家。会议还将展出与氮化物半导体研究有关的工业专业知识。这次会议将促进电子、光子和磁性设备的领先研究取得进展。它们的例子包括发光设备(LED、LED、激光二极管、UV、VIS、IR)；电子设备(射频、太赫兹和功率设备)；光伏、能量采集和光探测器传感器；执行器和声学设备。课程内容还包括：加工、制造和热管理；体相生长；外延生长；纳米结构和纳米器件；光学和电子性能；缺陷表征和工程；结构分析；理论和模拟；以及新材料和器件概念。除了技术会谈，主办方还计划了几次全体会议，以及20次特邀会谈和两次海报会议。将有4个小时的课程集中在III-N研究的重要主题上，包括GaN相关材料的X射线衍射以及GaN LED和HEMT的模拟和建模。预计这次会议将在确定新的研究方向方面发挥关键作用。让下一代研究人员接触这些重要学科对于了解新的半导体科学和技术是如何发展至关重要的。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

The proposed project seeks financial support for enhancing graduate student participation, especially those who will attend their first national meeting and those who belong to the underrepresented groups at a Conference to be held from July 7 to 12, 2019 at Bellevue Washington. The "13th International Conference on Nitride Semiconductors" will focus on a variety of III-Nitride semiconductor materials and devices. The Conference will host world-renowned experts from leading institutions around the world. An exhibition of industrial expertise related to nitride semiconductor research will also take place at the conference. The conference will foster advances in the leading research of electronic, photonic and magnetic devices. Examples of them include Light Emitting Devices (LEDs, LEDs, Laser Diodes, UV, VIS, IR); Electronic Devices (RF, THz and Power Devices); Photovoltaics, Energy Harvesting and Photo Detectors Sensors; Actuators and Acoustic Devices. Processing, Fabrication and Thermal Management; Bulk Growth; Epitaxial Growth; Nanostructures and Nano-Devices; Optical and Electronic Properties; Defect Characterization and Engineering; Structural Analysis; Theory and Simulation; and New Materials and Device Concepts will also be addressed. In addition to technical talks, the organizers have also planned several plenary talks as well as 20 invited talks and two poster sessions. There will be short 4-hour courses focused on important topics of III-N research, including X-ray diffraction of GaN-related materials and simulation and modeling of GaN LEDs and HEMTs. The conference is expected to play a key role in identifying new directions for research. Exposing the next generation of researchers to these important disciplines is critical for learning how the new science and technology of semiconductors are developing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.