International Conference on Nitride Semiconductors ICNS10, August 25-30, 2013. To be Held at the Gaylord Hotel Convention Center, National Harbor MD.

国际氮化物半导体会议 ICNS10，2013 年 8 月 25-30 日。将在马里兰州国家港口盖洛德酒店会议中心举行。

• 批准号: 1340370
• 负责人: J. Ardie Butch Dillen
• 金额: $ 1.15万
• 依托单位: Materials Research Society
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-09-15 至 2014-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1340370&HistoricalAwards=false
• 关键词: International; Conference; Nitride; Semiconductors; ICNS10

The proposed project seeks financial support for the participation of student, underrepresented groups and young researchers in a conference to be held at the Gaylord Hotel Convention Center, National Harbor, MD, from August 25 to 30, 2013.. The International Conference on Nitride Semiconductors ICNS10 will address research areas in Wide bandgap group-III nitrides. This annual meeting offers an important forum to review and identify all aspects of energy efficiency electronics, infrared and solid state lighting. The topics are divided into twelve sections and the committee has assembled a group of invited speakers, experts in the field, for each section: Bulk and Template Growth, Epitaxial Growth and Structural Properties, Nanostructures and Novel Nitride Alloys, Light Emitting Diodes and Improving Efficiency, Lasing and Laser Diodes, Power and High Frequency Devices, Optical and Magnetic Properties, Solar Cells and Energy Harvesting, Device Fabrication and Reliability, InN and Related Materials, Theory and Modeling of Materials and Devices, Sensors and Photodetectors.

拟议的项目旨在为学生，代表性不足的团体和年轻的研究人员参加将于2013年8月25日至30日在马里兰州国家港盖洛德酒店会议中心举行的会议提供财政支持。氮化物半导体国际会议ICNS 10将讨论宽带隙III族氮化物的研究领域。本次年会提供了一个重要的论坛，以审查和确定能源效率电子，红外和固态照明的各个方面。主题分为12个部分，委员会为每个部分召集了一组特邀演讲者，该领域的专家：体和模板生长，外延生长和结构特性，纳米结构和新型氮化物合金，发光二极管和提高效率，激光和激光二极管，功率和高频器件，光学和磁性，太阳能电池和能量收集，器件制造和可靠性，氮化铟和相关材料，材料和器件的理论和建模，传感器和光电探测器。