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I-Corps Teams: Opto-plasmonic Photodetectors for Low-Cost Tele/Data Communications Beyond 5G

I-Corps Teams: Opto-plasmonic Photodetectors for Low-Cost Tele/Data Communications Beyond 5G
I-Corps 团队:用于 5G 之外的低成本电信/数据通信的光等离激元光电探测器
批准号:
1904171
负责人:
Bahram Nabet
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-02-01 至 2020-07-31

项目摘要

项目成果

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中文摘要
翻译
这个i-Corps项目的更广泛的影响/商业潜力包括实现用于电信和数据通信网络和中心的超高速光接收器,如在骨干基础设施和最终用户使用中。该项目提供了独特的技术进步,通过驯服电子云对激励的集体响应-称为光等离子体器件(OPD)-来绕过操作速度和能源使用的传统限制,从而产生更敏感、更高速和更低功耗的设备,将光信号转换为电信号,在信息传输中执行关键的一步。这降低了每比特信息的能源成本,帮助光电子集成电路(PIC)技术在负担得起的超高速互联网、大容量物联网(IoT)和节能云数据存储和处理等应用中成为普通公众使用的主流。值得注意的是,该项目通过产生先进的技术诀窍和知识产权,帮助美国在价值数十亿美元的全球通信市场上保持技术领先地位,掌握着制造新OPD的关键。该项目的成功完成为电气和光学工程师带来了几个可持续工作的商机,随着数据通信需求的增加,这些工作有可能呈指数级增长。这个i-Corps项目基于磷化铟材料系统生产市场就绪的高速光电探测器技术,这些技术是:i)能够以超过200 Gbit/s的远程/数据通信速率运行,这比最先进的速度快6倍;ii)通过与硅的异质集成与Silicon Photonics技术兼容。具体地说,该产品解决了依赖基于锗的光电探测器作为光接收器的硅光子集成电路高速运行的瓶颈。为了使该产品商业化,研发计划包括a)生产与光通信波长兼容的独立侧面照明的基于InP的高速光电探测器,以及b)将开发的基于InP的光接收器集成到Si-Photonics集成电路。原型工作将使用NSF支持的制造设施完成,但批量生产的可行性将通过使用无晶圆厂模型和使用美国各地现有的硅代工服务来证明。该奖项反映了NSF的法定使命,并已通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
The broader impact/commercial potentials of this I-Corps project include realization of ultra-fast optical receivers for applications in tele and data communication networks and centers both as in backbone infrastructure, and in end-user usage. This project provides unique technological advancements that circumvent traditional limits in speed of operation and in energy usage by taming the collective response of clouds of electrons in response to excitation - known as opto-plasmonic devices (OPD) - resulting in much more sensitive, high speed, and low power-consumption devices which convert optical signals to electrical ones, performing a crucial step in information transport. This reduces the energy cost-per-bit of information, helping Photonics Integrated Circuit (PIC) technology to become mainstream for general public use in applications such as in affordable ultra-high-speed Internet, high-capacity Internet-of-Things (IoT), and energy-saving cloud data storage and processing. Notably, this project contributes to the technological leadership of the US in the multi-billion dollar global communications markets, by generating advanced technical know-how and intellectual property, holding the key in manufacturing of new OPDs. Successful completion of this project results in a business opportunity for several sustainable jobs for electrical and optical engineers with potential for exponential growth in line with increasing demand for data communication. This I-Corps project produces market-ready high-speed photodetector technology based on Indium Phosphide material system that are i) capable of operation in tele/data communication rates of more than 200 Gbits/sec, which is six times faster than state-of-the-art, and ii) compatible with Silicon Photonics technology through a heterogeneous integration with silicon. Specifically, this product solves a bottleneck in high-speed operation of Silicon Photonics Integrated Circuits that rely on Germanium-based photodetectors as their optical receiver. For this product to be commercially ready, research and development plan includes major milestones of a) producing a stand-alone side-illuminated InP-based high speed photodetector compatible with optical communication wavelengths, and b) integration of the developed InP-based optical receiver into a Si-Photonics integrated circuit. Prototyping work will be done using NSF-supporting fabrication facilities, but volume production feasibility will be demonstrated by utilizing a fab-less model and using existing silicon foundry services across the United States.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(2)
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会议论文
DOI: 10.1002/adpr.202000084
发表时间: 2020-11
期刊: Advanced Photonics Research
影响因子: --
作者: [Guangjiang Li;Kiana Montazeri;M. K. Ismail;M. Barsoum;B. Nabet;L. Titova]
通讯作者: Guangjiang Li;Kiana Montazeri;M. K. Ismail;M. Barsoum;B. Nabet;L. Titova
SBIR Phase I: High-performance Opto-plasmonic Technology for Next Generation Optoelectronic Manufacturing
  • 批准号:
    2026118
  • 项目类别:
    Standard Grant
  • 资助金额:
    $25.6万
  • 财政年份:
    2020
  • 负责人:
    Bahram Nabet
  • 依托单位:
Detection via Collective Excitation of Confined Charge
  • 批准号:
    0702716
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2007
  • 负责人:
    Bahram Nabet
  • 依托单位:
2D and 1D Heterojunction and Heterodimensional Devices for Optoelectronics
  • 批准号:
    0117073
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2001
  • 负责人:
    Bahram Nabet
  • 依托单位:
Optoelectronic Device Inspection and Test Station
  • 批准号:
    9650350
  • 项目类别:
    Standard Grant
  • 资助金额:
    $2.2万
  • 财政年份:
    1996
  • 负责人:
    Bahram Nabet
  • 依托单位:
海外基金