Detection via Collective Excitation of Confined Charge
Detection via Collective Excitation of Confined Charge
批准号:
0702716
负责人:
Bahram Nabet
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-06-01 至 2010-05-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Intellectual Merits: In this project, the collective response of a dense cloud of confined charge is used as the basis for a number of high sensitivity detection applications including optical detectors, charged particle detectors, and the detectors of electromagnetic radiation in the terahertz frequency range. Optical detectors will be fabricated which circumvent the most limiting constraint on speed of device, the transit time of the carriers, by collecting them in a reservoir of charge and detecting the subsequent charge density waves. Charged-particle detectors will be designed, fabricated and analyzed which work on the same basis of the perturbation of such a reservoir. Coupling of electromagnetic radiation in the terahertz region and such devices will be studied and is expected to lead to the development of sensitive detectors of such radiation. These effects are enhanced with increase in the degree of confinement; as a result schemes for designing one-dimensional devices for photon and charged particle detection will be pursued. Successful completion of this project will have a broad scientific impact on the study of the collective response of electrons with application areas ranging from electron microscopy to optical communications, and biomedical engineering. Broader impacts: The broader educational impact of this work will be magnified by building on a strong Drexel tradition of involving undergraduates in research at early stages of their education, and will leverage a number of NSF-sponsored programs including two Research Experiences for Undergraduates programs, including one specifically involving sensor development, a Research Experiences for Teachers site, an Integrative Graduate Education and Research program in nanotechnology and a GK-12 graduate fellowship and educational outreach program. Both undergraduates and graduates will be involved in growth, characterization, design, fabrication, and analysis of these nanostructured materials. In addition, much of the previous research leading to the present work is based on international collaboration and will be continued as a result of NSF support.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
SBIR Phase I: High-performance Opto-plasmonic Technology for Next Generation Optoelectronic Manufacturing
-
批准号:2026118
-
项目类别:Standard Grant
-
资助金额:$25.6万
-
财政年份:2020
-
负责人:Bahram Nabet
-
依托单位:
I-Corps Teams: Opto-plasmonic Photodetectors for Low-Cost Tele/Data Communications Beyond 5G
-
批准号:1904171
-
项目类别:Standard Grant
-
资助金额:$5.0万
-
财政年份:2019
-
负责人:Bahram Nabet
-
依托单位:
2D and 1D Heterojunction and Heterodimensional Devices for Optoelectronics
-
批准号:0117073
-
项目类别:Continuing Grant
-
资助金额:$30.0万
-
财政年份:2001
-
负责人:Bahram Nabet
-
依托单位:
Optoelectronic Device Inspection and Test Station
-
批准号:9650350
-
项目类别:Standard Grant
-
资助金额:$2.2万
-
财政年份:1996
-
负责人:Bahram Nabet
-
依托单位:
Optoelectronic and Preattentive Vision
-
批准号:9210786
-
项目类别:Standard Grant
-
资助金额:$7.0万
-
财政年份:1992
-
负责人:Bahram Nabet
-
依托单位:
国内基金
海外基金
登录
查看更多内容
面向柔性 3D 集成的仿生结构 VIA 强化方法及其机理研究
-
批准号:ZCLQN26F0101
-
项目类别:省市级项目
-
资助金额:--
-
批准年份:2026
-
负责人:黄淳
-
依托单位:
外电场调控二维VIA族单层的Rashba自旋劈裂和翘曲效应的理论研究
-
批准号:12364017
-
项目类别:地区科学基金项目
-
资助金额:31.00万元
-
批准年份:2023
-
负责人:陈少波
-
依托单位:
二维层状VIA族材料的形成机制、生长及物性调控的第一性原理研究
-
批准号:--
-
项目类别:面上项目
-
资助金额:55万元
-
批准年份:2022
-
负责人:朱志立
-
依托单位:
蓝光IIB-VIA族半导体量子点在电致发光过程中的稳定性衰退机制及其改进策略的理论研究
-
批准号:--
-
项目类别:面上项目
-
资助金额:60万元
-
批准年份:2021
-
负责人:杨明理
-
依托单位:
典型VIA族窄禁带三元半导体薄膜的外延生长与物性调控
-
批准号:52072059
-
项目类别:面上项目
-
资助金额:58.0万元
-
批准年份:2020
-
负责人:乔梁
-
依托单位:
先进Via-Pillar工艺下VLSI性能驱动多层布线算法研究
-
批准号:61877010
-
项目类别:面上项目
-
资助金额:52.0万元
-
批准年份:2018
-
负责人:刘耿耿
-
依托单位:
大面积SnS2、SnSe2二维材料可穿戴光电探测器应用的基础研究
-
批准号:61805044
-
项目类别:青年科学基金项目
-
资助金额:25.0万元
-
批准年份:2018
-
负责人:郑照强
-
依托单位:
VIA族元素(S, Se, Te)掺杂黑磷单晶的高温高压生长及对其环境稳定性的调控
-
批准号:51672240
-
项目类别:面上项目
-
资助金额:62.0万元
-
批准年份:2016
-
负责人:向建勇
-
依托单位:
基于VIA族和IB族杂质深能级的硅亚带隙光谱响应机理研究
-
批准号:61504139
-
项目类别:青年科学基金项目
-
资助金额:20.0万元
-
批准年份:2015
-
负责人:胡少旭
-
依托单位:
VIA族元素共掺杂CoSb3基材料的制备和电热输运机制研究
-
批准号:51302205
-
项目类别:青年科学基金项目
-
资助金额:25.0万元
-
批准年份:2013
-
负责人:段波
-
依托单位: