Single crystal growth of oxides using additive laser material deposition
Single crystal growth of oxides using additive laser material deposition
批准号:
238032435
负责人:
Professor Dr. Reinhart Poprawe
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2013
资助国家:
德国
项目状态:
已结题
起止时间:
2012-12-31 至 2015-12-31
中文摘要
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英文摘要
Laser material deposition (LMD) involves the feeding of a powder onto a substrate which is completely melted by laser radiation. Bulk volumes can be built up through layer-by-layer deposition. Single crystal growth by LMD is performed in a furnace which is accessible form the top. The furnace allows the temperature management regarding heating and cooling rates and setting of small temperature gradients in melt and crystal. Compared to conventional single crystal growth methods LMD avoids contamination of the melt from the heat source (gas flame in Verneuil method) or from the crucible (Czochralski method). Laser based growth of bulk single crystals has not been developed so far.The main goal of the project is the fundamental understanding of single crystal growth of oxides by additive laser material deposition using sapphire as demonstrator material. To achieve this goal knowledge has to be gained in the correlation between process parameters one side and growth performance and properties of the crystals on the other side as well as in processing technology. The following sub-goals should be achieved:Modeling of the growth process using FEM simulation of space and time resolved temperature fields. Based on these fields temperature gradients in the liquid and solid state can be studied. Beam intensity distribution and laser power will be adapted to create optimum conditions for single crystal growth of sapphire.Influence of the process parameters on the growth and properties of the crystal. The main parameters are laser power, intensity distribution, heating and cooling rates, powder feeding, properties of the powder and the substrate, furnace temperature and rotation of the crystal. Adaptation of processing and system engineering to achieve optimum growth conditions. This involves the development of a beam homogenizer for CO2 laser radiation for a maximum power of 3 kW. Furthermore the powder feeding has to be adapted to achieve a homogeneous distribution of the powder on the substrate.Additive laser material deposition as a flexible method for the growth of single crystals opens many opportunities for future applications, e.g. the free form manufacturing of different geometries (cylinder, cube, disc) by beam shaping or scanning or the manufacturing of gradient crystals by variation of powder composition during layer wise build-up.
期刊论文(1)
专著(0)
科研奖励(0)
会议论文
DOI:
10.2351/1.4983638
发表时间:
2017-05-01
期刊:
JOURNAL OF LASER APPLICATIONS
影响因子:
2.1
作者:
[Wilms, M. B., Biermann, T., Poprawe, R.]
通讯作者:
Poprawe, R.
Investigation of cumulative effects during fs-laser-material-processing with average powers of several 100 W
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批准号:256972721
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2014
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
Nicht-thermischer Abtrags- und Depositionsprozess zur Herstellung von Graphen mit ultrakurz gepulster Laserstrahlung
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批准号:210185536
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2012
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
Online process diagnostics of ultrafast laser modifications and energy transport mechanisms in the volume of dielectrics and semiconductors
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批准号:195967998
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2011
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
Erweiterung der Verfahrensgrenzen für das Laserstrahlpolieren von Freiformflächen
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批准号:27051079
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项目类别:Priority Programmes
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资助金额:$0.0万
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财政年份:2006
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
Reaktionslasersintern von Spinellbauteilen
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批准号:5449707
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2005
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
Oberflächenfunktionalisierung metallischer Substrate durch Laser- und Plasmabehandlung zur Herstellung schmelztauchbeschichteter Verbunde
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批准号:5424252
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项目类别:Research Grants
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资助金额:$0.0万
-
财政年份:2004
-
负责人:Professor Dr. Reinhart Poprawe
-
依托单位:
Broadening of the process limits in laser polishing of steel by analysis of the surface structure formation
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批准号:5375535
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项目类别:Priority Programmes
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资助金额:$0.0万
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财政年份:2002
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
Temperatur-, Spannnungs- und Verformungsfelder beim Selective Laser Melting (SLM) Verfahren
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批准号:5321600
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2001
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
Belichtung und Gefügemodifizierung mittels UV-Laserstrahlung zur Mikrostrukturierung fotostrukturierbarer Gläser
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2000
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负责人:Professor Dr. Reinhart Poprawe
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依托单位:
国内基金
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