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Modular Electronic Devices by Selective Co-axial Lithography of Nanowire Semiconductors

采用纳米线半导体选择性同轴光刻技术的模块化电子器件

基本信息

批准号：
1916953
负责人：
Michael Filler
金额：
$ 40.24万
依托单位：
Georgia Tech Research Corporation
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2019
资助国家：
美国
起止时间：
2019-08-01 至 2023-07-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1916953&HistoricalAwards=false
关键词：
Modular Electronic Devices Selective Co

项目摘要

This project provides new fundamental insights into the manufacturing of flexible electronic devices for applications in healthcare, energy, and textiles. Existing materials and current manufacturing approaches cannot presently produce flexible substrates with the needed electrical performance. This award investigates an advanced manufacturing process to enable the additive fabrication of modular transistors with desirable low voltages ( 1 V) and high operating frequencies ( 1 GHz). This research combines concepts from chemical engineering, materials science, and electrical engineering, and sets the stage for a variety of new electronic technologies that ensure the U.S. maintains its competitive edge in electronics manufacturing. The collaborative project offers multidisciplinary training opportunities for one graduate student and the team's podcast, called Nanovation,serves as a forum to discuss the nanomanufacturing concepts central to this project and, in doing so, generate interest among the general public and researchers alike. This research project seeks to develop an additive nanomanufacturing process to fabricate modular, high-performance field-effect transistors. The work synergistically combines bottom-up semiconductor crystal growth with a new selective coaxial lithography method to template a self-aligned gate stack on a single-crystalline, sub-micron channel. Specifically, the research team advances the understanding of the coaxial lithographic method, develops compatible area-selective deposition processes to achieve a low defect density gate stack, and electrically contacts and characterizes the resulting nanoelectronic devices. Structural and electrical characterization at each step provides feedback with which to advance the process and device designs. Success motivates important next steps, such as, the placement and interconnection of modular devices to form functional circuitry.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该项目为医疗保健、能源和纺织品领域的柔性电子设备制造提供了新的基本见解。现有的材料和当前的制造方法目前不能生产具有所需电性能的柔性基板。该奖项旨在研究一种先进的制造工艺，以实现具有理想的低电压（1 V）和高工作频率（1 GHz）的模块化晶体管的增材制造。这项研究结合了化学工程，材料科学和电气工程的概念，并为各种新的电子技术奠定了基础，以确保美国保持其在电子制造业的竞争优势。该合作项目为一名研究生提供多学科培训机会，该团队的播客名为Nanovation，作为一个论坛，讨论该项目的核心纳米制造概念，并在这样做的过程中，引起公众和研究人员的兴趣。该研究项目旨在开发一种添加剂纳米制造工艺，以制造模块化的高性能场效应晶体管。这项工作协同结合了自下而上的半导体晶体生长与一种新的选择性同轴光刻方法模板上的单晶，亚微米沟道的自对准栅堆叠。具体而言，研究小组推进了对同轴光刻方法的理解，开发了兼容的区域选择性沉积工艺，以实现低缺陷密度的栅极堆叠，并对所得纳米电子器件进行了电接触和表征。每一步的结构和电气特性提供反馈，以推进工艺和器件设计。成功激励了重要的后续步骤，例如，模块化设备的放置和互连以形成功能电路。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

期刊论文数量（5）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

研究湿化学氧化方法形成自对准 Pt-HfO2-Si 栅堆叠的 SiO2 中间层

DOI：
10.1116/6.0002762
发表时间：
2023
期刊：
Journal of Vacuum Science & Technology A
影响因子：
2.9
作者：
Brummer, Amy C.;Kurup, Siddharth;Aziz, Daniel;Filler, Michael A.;Vogel, Eric M.
通讯作者：
Vogel, Eric M.

Fabrication and characterization of a self-aligned gate stack for electronics applications

用于电子应用的自对准栅极堆叠的制造和表征

DOI：
10.1063/5.0062163
发表时间：
2021
期刊：
Applied Physics Letters
影响因子：
4
作者：
Brummer, Amy C.;Mohabir, Amar T.;Aziz, Daniel;Filler, Michael A.;Vogel, Eric M.
通讯作者：
Vogel, Eric M.

Bottom-up nanoscale patterning and selective deposition on silicon nanowires

DOI：
10.1088/1361-6528/ac3bed
发表时间：
2021-11
期刊：
Nanotechnology
影响因子：
3.5
作者：
Amar T. Mohabir;Daniel Aziz;A. Brummer;Kathleen E Taylor;E. Vogel;M. Filler
通讯作者：
Amar T. Mohabir;Daniel Aziz;A. Brummer;Kathleen E Taylor;E. Vogel;M. Filler

Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter-Modulated Nanowires

孔隙率和边界散射对直径调制纳米线热传输的影响

DOI：
10.1021/acsami.1c20242
发表时间：
2022
期刊：
ACS Applied Materials & Interfaces
影响因子：
9.5
作者：
Malhotra, Abhinav;Tutuncuoglu, Gozde;Kommandur, Sampath;Creamer, Patrick;Rajan, Aravindh;Mohabir, Amar;Yee, Shannon;Filler, Michael A.;Maldovan, Martin
通讯作者：
Maldovan, Martin