Modular Electronic Devices by Selective Co-axial Lithography of Nanowire Semiconductors
Modular Electronic Devices by Selective Co-axial Lithography of Nanowire Semiconductors
批准号:
1916953
负责人:
Michael Filler
金额:
$40.24万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-08-01 至 2023-07-31
中文摘要
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英文摘要
This project provides new fundamental insights into the manufacturing of flexible electronic devices for applications in healthcare, energy, and textiles. Existing materials and current manufacturing approaches cannot presently produce flexible substrates with the needed electrical performance. This award investigates an advanced manufacturing process to enable the additive fabrication of modular transistors with desirable low voltages ( 1 V) and high operating frequencies ( 1 GHz). This research combines concepts from chemical engineering, materials science, and electrical engineering, and sets the stage for a variety of new electronic technologies that ensure the U.S. maintains its competitive edge in electronics manufacturing. The collaborative project offers multidisciplinary training opportunities for one graduate student and the team's podcast, called Nanovation,serves as a forum to discuss the nanomanufacturing concepts central to this project and, in doing so, generate interest among the general public and researchers alike. This research project seeks to develop an additive nanomanufacturing process to fabricate modular, high-performance field-effect transistors. The work synergistically combines bottom-up semiconductor crystal growth with a new selective coaxial lithography method to template a self-aligned gate stack on a single-crystalline, sub-micron channel. Specifically, the research team advances the understanding of the coaxial lithographic method, develops compatible area-selective deposition processes to achieve a low defect density gate stack, and electrically contacts and characterizes the resulting nanoelectronic devices. Structural and electrical characterization at each step provides feedback with which to advance the process and device designs. Success motivates important next steps, such as, the placement and interconnection of modular devices to form functional circuitry.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks
研究湿化学氧化方法形成自对准 Pt-HfO2-Si 栅堆叠的 SiO2 中间层
DOI:
10.1116/6.0002762
发表时间:
2023
期刊:
Journal of Vacuum Science & Technology A
影响因子:
2.9
作者:
[Brummer, Amy C., Kurup, Siddharth, Aziz, Daniel, Filler, Michael A., Vogel, Eric M.]
通讯作者:
Vogel, Eric M.
Fabrication and characterization of a self-aligned gate stack for electronics applications
用于电子应用的自对准栅极堆叠的制造和表征
DOI:
10.1063/5.0062163
发表时间:
2021
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Brummer, Amy C., Mohabir, Amar T., Aziz, Daniel, Filler, Michael A., Vogel, Eric M.]
通讯作者:
Vogel, Eric M.
Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter-Modulated Nanowires
孔隙率和边界散射对直径调制纳米线热传输的影响
DOI:
10.1021/acsami.1c20242
发表时间:
2022
期刊:
ACS Applied Materials & Interfaces
影响因子:
9.5
作者:
[Malhotra, Abhinav, Tutuncuoglu, Gozde, Kommandur, Sampath, Creamer, Patrick, Rajan, Aravindh, Mohabir, Amar, Yee, Shannon, Filler, Michael A., Maldovan, Martin]
通讯作者:
Maldovan, Martin
DOI:
10.1088/1361-6528/ac3bed
发表时间:
2021-11
期刊:
Nanotechnology
影响因子:
3.5
作者:
[Amar T. Mohabir;Daniel Aziz;A. Brummer;Kathleen E Taylor;E. Vogel;M. Filler]
通讯作者:
Amar T. Mohabir;Daniel Aziz;A. Brummer;Kathleen E Taylor;E. Vogel;M. Filler
MRI: Acquisition of a Powder ALD/CVD Reactor for Next Generation Nanomanufacturing
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批准号:2117205
-
项目类别:Standard Grant
-
资助金额:$51.97万
-
财政年份:2021
-
负责人:Michael Filler
-
依托单位:
Collaborative Research: Controlling Process Variability in Bottom-up Nanoelectronic Devices
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批准号:2109040
-
项目类别:Standard Grant
-
资助金额:$25.0万
-
财政年份:2021
-
负责人:Michael Filler
-
依托单位:
Reaction/Transport Behavior in the Synthesis of Functionally-Encoded Nanowires via the Geode Process
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批准号:1805015
-
项目类别:Standard Grant
-
资助金额:$36.0万
-
财政年份:2018
-
负责人:Michael Filler
-
依托单位:
Collaborative Research: Identifying and Controlling Conductivity Variations in Semiconductor Nanowires
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批准号:1603904
-
项目类别:Standard Grant
-
资助金额:$17.5万
-
财政年份:2016
-
负责人:Michael Filler
-
依托单位:
UNS: Deep Sub-wavelength Thermal Radiation Localization and Transport
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批准号:1510934
-
项目类别:Standard Grant
-
资助金额:$35.04万
-
财政年份:2015
-
负责人:Michael Filler
-
依托单位:
CAREER: Process-Structure-Property Relationships for Rational Engineering of Semiconductor Nanowires
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批准号:1150755
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项目类别:Standard Grant
-
资助金额:$40.0万
-
财政年份:2012
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负责人:Michael Filler
-
依托单位:
Rational Engineering of Semiconductor Nanowire Crystal Structure for Next Generation Energy Conversion Devices
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批准号:1133563
-
项目类别:Standard Grant
-
资助金额:$27.02万
-
财政年份:2011
-
负责人:Michael Filler
-
依托单位:
海外基金