SBIR Phase II: Laser-Enabled Massively Parallel Die Transfer for microLED Displays
SBIR Phase II: Laser-Enabled Massively Parallel Die Transfer for microLED Displays
批准号:
1926881
负责人:
Matthew Semler
金额:
$74.97万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-10-01 至 2021-02-28
中文摘要
该小型企业创新研究(SBIR)第二阶段项目的更广泛影响/商业潜力是实现一种新的显示技术,除其他好处外,还可以降低与公共显示器、电视、移动的设备、可穿戴设备相关的功耗。MicroLED显示屏技术有潜力将显示屏的功耗降低90%,这代表着一个影响世界功耗状况的巨大机会。拟议的项目将把激光使能先进布局(LEAP)技术提升到一个水平,使microLED显示屏可以高效、可靠和批量生产。MicroLED显示器被广泛认为是下一代显示技术,但缺乏在每个显示器上放置数百万个所需MicroLED的方法是其商业化的主要障碍之一。LEAP通过快速扫描衍射成多个小光束的激光束来解决这个问题,以快速连续地转移microLED阵列,实现比当前方法高几个数量级的放置率。该项目的任务包括整个LEAP工艺的开发和优化,包括对工艺至关重要的材料的开发、用于转移的microLED的准备、microLED的激光放置以及器件衬底上的microLED互连。我们的目标是展示一个放置速度超过100 M单位每小时的放置精度为10微米(3西格玛)和99.5%的产量。该项目最后将展示采用新开发工艺组装的microLED显示屏。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project is to enable a new display technology that, among other benefits, reduces the power consumption associated with public displays, TVs, mobile devices, wearables. MicroLED display technology has the potential to reduce display power consumption by 90% relative to today's displays, representing a large opportunity to impact the world's power consumption profile.The proposed project will advance the Laser Enabled Advanced Placement (LEAP) technology to a level where microLED displays can be produced efficiently, reliably, and in volume. MicroLED displays are widely considered to be the next generation of display technology, but the lack of methods for placing the millions of required microLEDs per display is one of the major obstacles to their commercialization. LEAP solves this problem by rapidly scanning a laser beam diffracted into multiple beamlets across the source wafer to transfer microLED arrays in rapid succession, achieving placement rates orders of magnitude higher than current methods. The tasks in this project include the development and optimization of the entire LEAP process, including the development of critical-to-the-process materials, preparation of microLEDs for transfer, laser placement of microLEDs, and microLED interconnection on the device substrate. The goal is to demonstrate a placement rate in excess of 100 M units per hour with a placement precision of 10 microns (3-sigma) and a yield of 99.5%. The project will conclude with a demonstration of a microLED display assembled with the newly developed processes.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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SBIR Phase I: Laser-Enabled Massively Parallel Die Transfer for ?LED Displays
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批准号:1745903
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项目类别:Standard Grant
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资助金额:$22.46万
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财政年份:2018
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负责人:Matthew Semler
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依托单位:
国内基金
海外基金
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