SBIR Phase II: Laser-Enabled Massively Parallel Die Transfer for microLED Displays
SBIR Phase II: Laser-Enabled Massively Parallel Die Transfer for microLED Displays
批准号:
1926881
负责人:
Matthew Semler
金额:
$74.97万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-10-01 至 2021-02-28
中文摘要
小型企业创新研究(SBIR)第二阶段项目的更广泛影响/商业潜力是实现新的显示技术,其中包括降低与公共显示器、电视、移动设备和可穿戴设备相关的功耗。与今天的显示器相比,MicroLED显示器技术有可能将显示器的功耗降低90%,这是一个巨大的机会来影响世界的功耗状况。拟议的项目将把激光支持的先进布局(LEAP)技术提升到可以高效、可靠和批量生产MicroLED显示器的水平。微LED显示器被广泛认为是下一代显示技术,但缺乏在每个显示器上放置数百万个所需微LED的方法是其商业化的主要障碍之一。LEAP解决了这一问题,方法是快速扫描穿过源晶片衍射成多个光束的激光束,以快速连续地传输微LED阵列,实现比当前方法高出数量级的贴装率。该项目的任务包括整个LEAP工艺的开发和优化,包括对工艺至关重要的材料的开发、用于转移的微LED的准备、微LED的激光放置以及器件基板上的微LED互连。我们的目标是展示每小时超过100M单位的贴装速度,贴装精度为10微米(3西格玛),成品率为99.5%。该项目最后将展示用新开发的工艺组装的微型LED显示屏。该奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project is to enable a new display technology that, among other benefits, reduces the power consumption associated with public displays, TVs, mobile devices, wearables. MicroLED display technology has the potential to reduce display power consumption by 90% relative to today's displays, representing a large opportunity to impact the world's power consumption profile.The proposed project will advance the Laser Enabled Advanced Placement (LEAP) technology to a level where microLED displays can be produced efficiently, reliably, and in volume. MicroLED displays are widely considered to be the next generation of display technology, but the lack of methods for placing the millions of required microLEDs per display is one of the major obstacles to their commercialization. LEAP solves this problem by rapidly scanning a laser beam diffracted into multiple beamlets across the source wafer to transfer microLED arrays in rapid succession, achieving placement rates orders of magnitude higher than current methods. The tasks in this project include the development and optimization of the entire LEAP process, including the development of critical-to-the-process materials, preparation of microLEDs for transfer, laser placement of microLEDs, and microLED interconnection on the device substrate. The goal is to demonstrate a placement rate in excess of 100 M units per hour with a placement precision of 10 microns (3-sigma) and a yield of 99.5%. The project will conclude with a demonstration of a microLED display assembled with the newly developed processes.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
SBIR Phase I: Laser-Enabled Massively Parallel Die Transfer for ?LED Displays
-
批准号:1745903
-
项目类别:Standard Grant
-
资助金额:$22.46万
-
财政年份:2018
-
负责人:Matthew Semler
-
依托单位:
国内基金
海外基金
登录
查看更多内容
Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark
Supercooled Phase Transition
-
批准号:24ZR1429700
-
项目类别:省市级项目
-
资助金额:--
-
批准年份:2024
-
负责人:YUICHIRO NAKAI
-
依托单位:
ATLAS实验探测器Phase 2升级
-
批准号:11961141014
-
项目类别:国际(地区)合作与交流项目
-
资助金额:3350万元
-
批准年份:2019
-
负责人:刘衍文
-
依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
-
批准号:41802035
-
项目类别:青年科学基金项目
-
资助金额:12.0万元
-
批准年份:2018
-
负责人:张里
-
依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究
-
批准号:61675216
-
项目类别:面上项目
-
资助金额:60.0万元
-
批准年份:2016
-
负责人:叶青
-
依托单位:
基于Phase-type分布的多状态系统可靠性模型研究
-
批准号:71501183
-
项目类别:青年科学基金项目
-
资助金额:17.4万元
-
批准年份:2015
-
负责人:陈童
-
依托单位:
纳米(I-Phase+α-Mg)准共晶的临界半固态形成条件及生长机制
-
批准号:51201142
-
项目类别:青年科学基金项目
-
资助金额:25.0万元
-
批准年份:2012
-
负责人:张英波
-
依托单位:
连续Phase-Type分布数据拟合方法及其应用研究
-
批准号:11101428
-
项目类别:青年科学基金项目
-
资助金额:23.0万元
-
批准年份:2011
-
负责人:黄卓
-
依托单位:
D-Phase准晶体的电子行为各向异性的研究
-
批准号:19374069
-
项目类别:面上项目
-
资助金额:6.4万元
-
批准年份:1993
-
负责人:张殿琳
-
依托单位: