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I-Corps: Additive Laser Metal Deposition onto Silicon for Enhanced Electronics Cooling

I-Corps: Additive Laser Metal Deposition onto Silicon for Enhanced Electronics Cooling
I-Corps:在硅上沉积激光金属以增强电子设备冷却
批准号:
1935763
负责人:
Scott Schiffres
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-06-15 至 2023-11-30

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中文摘要
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英文摘要
The broader impact/commercial potential of this I-Corps project is a reduction of the microprocessor operating temperature and an increase in computer chip performance. The heat generated by electronic devices has been rising dramatically, posing a significant challenge to microprocessor performance. In particular, the thermal interface materials, the glue that thermally connects the electronic chip to the heat sink, is a bottleneck. The proposed additive manufacturing technology circumvents this bottleneck by directly printing the heat sink onto the chip. With this technology, thermal management components can be directly printed onto the electronic package without using traditional thermal interface materials. The proposed thermal solution will enable significant increases in heat flux, enabling faster and more efficient computation. This technology will enable the elimination of thermal interface materials and can potentially lead to cooler operating temperature and overall energy savings.This I-Corps project focuses on bonding metal onto silicon for electronic cooling by laser processing. Many important applications require bonding of dissimilar materials, yet there are relatively limited studies of additive manufacturing onto dissimilar substrates. Laser-based additive manufacturing of heat removal device enables the rapid formation of silicides at the silicon-metal interface and the manufacture of small features onto silicon. This research builds on conventional low-temperature bonding of metal alloys onto semiconductor and ceramic substrates by using reactive elements, and overcomes the timescale limitations observed in conventional brazing. Silicide formation during selective laser melting occurs several orders of magnitude faster than conventional bonding techniques. The material also melts at a low temperature, which minimizes the thermal stress after solidification. By employing selective laser melting, a low-temperature alloy can rapidly bond onto silicon to form heat removal devices with robust mechanical properties and low thermal resistance.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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PFI-TT: Enhanced Electronic Cooling via 3D Printing from Additive Laser Fabrication of Heat Removal Devices
  • 批准号:
    1941181
  • 项目类别:
    Standard Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    2020
  • 负责人:
    Scott Schiffres
  • 依托单位:
CAREER: Intermetallic Interfacial Thermal Transport for Advanced Electronics Manufacturing
  • 批准号:
    1846157
  • 项目类别:
    Standard Grant
  • 资助金额:
    $50.0万
  • 财政年份:
    2019
  • 负责人:
    Scott Schiffres
  • 依托单位:
NSF East Asia and Pacific Summer Institute for FY 2012 in Japan
  • 批准号:
    1209752
  • 项目类别:
    Fellowship Award
  • 资助金额:
    $0.58万
  • 财政年份:
    2012
  • 负责人:
    Scott Schiffres
  • 依托单位:
海外基金