CAREER: Intermetallic Interfacial Thermal Transport for Advanced Electronics Manufacturing

金属间半导体接口广泛应用于电子和增材制造领域。通过这些界面的热传递会影响散热，为了降低电子工作温度，需要更好地了解这些热特性。在半导体基板上直接制造散热装置可以节省大量能源并减少有毒电子废物。由于冷却改进而增加的可靠性在空间、国防和医疗设备等不能容忍故障的应用中尤其有价值。本研究考虑直接在电子器件上制造散热层。研究了金属间半导体界面和固溶体合金-半导体界面的热输运。其他任务是通过激光照射改善界面电导，并确定增加机械界面强度是否会增加热输运。该项目与K-12、社区学院、本科和研究生阶段的教育活动相结合。一项主要的推广活动名为“通过增材制造的传热”，通过动手实验向K-12学生（主要来自代表性不足的群体）传授三种传热模式。金属间化合物的形成是通过在半导体衬底上直接添加制造高导热性的热去除装置，如用于微处理器和电力电子。然而，人们对金属间化合物的热性能了解甚少，不能从母材导热系数来预测，这与诺德海姆？年代的关系。近年来的研究表明，硅化物（一种金属间化合物）与硅具有良好的导热性，但没有其他金属间化合物与半导体界面的导热性的报道。本研究探讨了金属间半导体界面与固溶体合金-半导体热界面的性质。此外，该项目还探讨了107 ？C/sec可以通过多次激光照射来减小，从而扩大金属间晶界并消除缺陷。研究了界面力学性能与界面导热系数的关系。通过选择性激光熔化特殊设计的合金，在半导体表面形成金属间化合物制备样品。通过频域热反射工具进行热表征。机械性能和热导率之间的关系仅对少数系统进行了研究，因此本研究扩展了对不同金属间半导体系统的认识。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Intermetallic-semiconductor interfaces are used widely in electronics and additive manufacturing. Thermal transport across these interfaces affects heat dissipation, and a better understanding of these thermal properties is needed to reduce electronic operating temperatures. Directly manufacturing heat removal devices onto semiconductor substrates can lead to substantial energy savings and a reduction in toxic electronic waste. The added reliability due to improved cooling will be especially valuable in failure-intolerant applications such as space, defense, and medical devices. This research considers the manufacture of heat removal layers directly onto electronic devices. The thermal transport in intermetallic-semiconductor interfaces versus solid-solution alloy-semiconductor interfaces will be studied. Additional tasks are to improve interfacial conductance through laser exposures and to determine whether increasing mechanical interfacial strength increases thermal transport. This project is integrated with educational activities at the K-12, community college, undergraduate, and graduate levels. A primary outreach activity, titled "Heat Transfer Thru Additive Manufacturing", uses hands-on experiments to teach K-12 students, largely from underrepresented groups, about the three modes of heat transfer. Intermetallics form via direct additive manufacture of high-thermal-conductivity heat-removal devices on semiconductor substrates, as used in microprocessors and power electronics. However, the thermal properties of intermetallics are poorly understood and cannot be predicted from base metal thermal conductivity, unlike solid-solution alloys with Nordheim?s relation. Recent research indicates that silicides (a type of intermetallic) have excellent thermal conductance with silicon, but no other intermetallic-semiconductor interfacial conductances have been reported. This research investigates the nature of intermetallic-semiconductor interfaces versus solid-solution alloy-semiconductor thermal interfaces. Furthermore, the project explores whether defects induced by quenching at 107 ?C/sec can be relieved by multiple laser exposures that grow the intermetallic grain boundaries and relieve defects. The relation between interfacial mechanical properties and interfacial thermal conductance are also examined. Samples are prepared by selective laser melting of specially designed alloys to form intermetallics on the semiconductor surface. Thermal characterization is performed with a frequency-domain thermoreflectance tool. The relationship between mechanical properties and thermal conductance has only been examined for a few systems, so this research expands knowledge of different intermetallic-semiconductor systems.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.