Band Engineering for High Gain Digital III-V Avalanche Photodiodes

高增益数字 III-V 雪崩光电二极管的频带工程

• 批准号: 1936016
• 负责人: Avik Ghosh
• 金额: $ 50万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-15 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1936016&HistoricalAwards=false
• 关键词: Band; Engineering; Gain; Digital; III

Nontechnical:Avalanche photodiodes (APDs) are widely used to convert optical data into electrical signal and can be used in a wide range of applications. These include optical fiber communication, medical spectroscopy, infrared sensing, and applications needing high gains and bandwidth such as quantum information networks. APDs provide very high sensitivity through internal gain and carrier multiplication in a region of high electric field in the device. This gain, however, comes at the cost of increased shot noise. The noise arises due to the pair creation by separate electron and hole currents that couple through a complex feedback mechanism. One way to limit the noise while preserving the gain is to constrain one type of carrier to a narrow bandwidth so that overall carrier multiplication stays primarily unipolar. This proposal focuses on band engineering of digital III-V heterostructures that can create minigaps selectively inside one band, thereby constraining the corresponding carrier energy and reducing shot noise. The PIs will undertake a detailed computational and experimental study of the materials physics and interface chemistry in APDs based on digital III-V alloys with high aluminum content. The successful fulfillment of the proposal will expand the materials genome of stable III-V alloys and set design rules for high gain photodiodes. These "designer" APDs will have ten to twenty times lower noise in the critical telecommunications spectrum of wavelengths from three to five microns and be capable of single photon detection. Investigators will incorporate results into upcoming courses and books. They will also recruit students and teachers from underrepresented groups through a variety of programs and fellowships. Results will be presented at conferences and meetings with industry and government members through affiliated cooperative research centers. They will also be incorporated into demonstrations at annual Montessori events for children.Technical:The proposal will lead to the fundamental study of band formation and orbital chemistry in III-V alloys, towards controlling carrier ionization coefficients, excess noise and overall optoelectronic device design and noise reduction of Avalanche Photo Diodes (APDs). The proposal will involve the development of multi-scale computational models for electronic and optical transport of III-V alloy APDs and creation of design rules for low noise APDs with high gain. Experiments will focus on fabrication and characterization of digital and random III-V APDs, with varying material composition, orientation, temperature, periodicity, and roughness profile, and measurements of their electronic and optical properties to confirm predictions from the theoretical study and isolate the effect of competing mechanisms. Armed with these results, a Separate Absorption Charge Multiplication (SACM) APD will be fabricated to combine the different alloying needs for absorption vs multiplication, as well as high-speed Modified Uni-Traveling Carrier (MUTC) photodiodes to explore carrier saturation velocity. The ultimate goal will be to show operation at 25 and 50 Gigabit per second, enabling high performance 100 and 400 Gigabits per second coarse Wavelet Division Multiplexing Ethernet. Improving the performance of APDs for photon detection will open up their use in a wide range of commercial, military and research applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性：雪崩光电二极管（APD）广泛用于将光学数据转换为电信号，可用于广泛的应用。这些包括光纤通信、医学光谱学、红外传感以及需要高增益和带宽的应用，如量子信息网络。APD通过器件中高电场区域中的内部增益和载流子倍增提供非常高的灵敏度。然而，这种增益是以增加散粒噪声为代价的。噪声的产生是由于通过复杂的反馈机制耦合的单独的电子和空穴电流产生的对。在保持增益的同时限制噪声的一种方法是将一种类型的载波约束到窄带宽，使得总体载波乘法主要保持单极。该提案侧重于数字III-V族异质结构的带工程，其可以在一个带内选择性地创建微型间隙，从而约束相应的载流子能量并降低散粒噪声。PI将对基于高铝含量数字III-V合金的APD中的材料物理和界面化学进行详细的计算和实验研究。该提案的成功实现将扩大稳定III-V合金的材料基因组，并为高增益光电二极管设定设计规则。这些“设计师”APD在3到5微米波长的关键电信光谱中的噪声将降低10到20倍，并且能够进行单光子探测。研究人员将把结果纳入即将推出的课程和书籍。他们还将通过各种项目和奖学金从代表性不足的群体中招募学生和教师。研究结果将通过附属的合作研究中心在与工业和政府成员的会议上公布。技术：该项目将引导III-V族合金能带形成和轨道化学的基础研究，以控制载流子电离系数、过量噪声和雪崩光电二极管（APD）的整体光电器件设计和降噪。该提案将涉及III-V合金APD电子和光学传输的多尺度计算模型的开发，以及具有高增益的低噪声APD的设计规则的创建。实验将侧重于数字和随机III-V APD的制造和表征，具有不同的材料成分，取向，温度，周期性和粗糙度轮廓，以及对其电子和光学特性的测量，以确认理论研究的预测并隔离竞争机制的影响。有了这些结果，一个单独的吸收电荷倍增（SACM）APD将被制造为联合收割机结合不同的合金吸收与倍增的需要，以及高速修改的单向旅行载流子（MUTC）光电二极管，探索载流子饱和速度。最终目标将是显示每秒25和50千兆位的操作，实现高性能每秒100和400千兆位的粗小波分复用以太网。 提高APD的光子探测性能将使其在广泛的商业、军事和研究应用中发挥作用。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

• DOI: 10.1109/jlt.2022.3185417
• 发表时间: 2022-09-01
• 期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
• 影响因子: 4.7
• 作者: Guo, Bingtian;Ahmed, Sheikh Z.;Campbell, Joe C.
• 通讯作者: Campbell, Joe C.

Design methodology of high-gain III-V digital alloy avalanche photodiodes

高增益III-V族数字合金雪崩光电二极管的设计方法

• DOI: 10.1117/12.2578959
• 发表时间: 2021
• 期刊: Proceedings of the SPIE
• 作者: Ahmed, Sheikh Z.;Zheng, Jiyuan;Tan, Yaohua;Campbell, Joe C.;Ghosh, Avik W.
• 通讯作者: Ghosh, Avik W.

Biaxial strain modulated valence-band engineering in III-V digital alloys

III-V 数字合金中的双轴应变调制价带工程

• DOI: 10.1103/physrevb.106.035301
• 发表时间: 2022
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Ahmed, Sheikh Z.;Tan, Yaohua;Zheng, Jiyuan;Campbell, Joe C.;Ghosh, Avik W.
• 通讯作者: Ghosh, Avik W.

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

基于物理的 p-i-n 雪崩光电二极管多尺度紧凑模型

• DOI: 10.1109/jlt.2021.3068265
• 发表时间: 2021
• 期刊: Journal of Lightwave Technology
• 影响因子: 4.7
• 作者: Ahmed, Sheikh Z.;Ganguly, Samiran;Yuan, Yuan;Zheng, Jiyuan;Tan, Yaohua;Campbell, Joe C.;Ghosh, Avik W.
• 通讯作者: Ghosh, Avik W.

Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate

• DOI: 10.1063/5.0165800
• 发表时间: 2023-09-25
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Ronningen，T. J.;Kodati，S. H.;Krishna，S.
• 通讯作者: Krishna，S.