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Gain engineering for terahertz quantum cascade lasers

太赫兹量子级联激光器的增益工程

基本信息

批准号：
299273829
负责人：
Dr. Yuri Victorovich Flores, Ph.D.
金额：
--
依托单位：
Department of Electrical Engineering and Computer Science
依托单位国家：
德国
项目类别：
Research Fellowships
财政年份：
2016
资助国家：
德国
起止时间：
2015-12-31 至 2017-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/299273829?language=en
关键词：
Gain engineering terahertz quantum cascade

项目摘要

The objective of this research project is the investigation and demonstration of novel active-region-design strategies for the fabrication of terahertz quantum cascade lasers (THz QCLs) with high optical gain. High optical gain will translate into better laser performance in terms of a high energy conversion efficiency, high light output power and high operation temperature of devices. All three aspects are crucial for the development of future technology and applications using terahertz light sources, which lie at the boundary between optics and electronics.THz QCLs represent by far the best combination of power and compactness in lasers emitting within the THz spectral range. First demonstrated in 2002, THz QCLs with emission frequencies between 1-10 THz have been reported since then with best performance in the 2-5 THz range. The state of the art performance of THz QCLs is however limited to low optical powers (< 1 W) and operation temperatures below 200 K.Within the scope of this project laser physics issues driving the laser gain including the design of laser levels, electron injection, electron extraction, and population inversion will be addressed. First, we will formulate a realistic model for electron transport in THz QCLs, including interface-roughness scattering and hot electron effects. Interface-roughness scattering arises from the perturbation potential induced by rough crystal interfaces in semiconductor heterostructures. Hot electron effects arise from the slow heat exchange between the electron system and the crystal lattice. Both mechanisms reduce laser gain and deteriorate laser performance. Second, we will investigate different approaches to engineer interface-roughness scattering in THz QCLs in order to enhance optical gain. We will also investigate approaches to reduce carrier leakage in THz QCLs by engineering the transport of hot electrons. Finally, we will propose and demonstrate novel active region designs for high-gain THz QCLs based on the well-established GaAs/AlGaAs heterosystem and on novel semiconductor heterosystems as InGaAs/InAlAs and InGaAs/InGaAs.

本研究项目的目的是研究和论证用于制造高光学增益的太赫兹量子级联激光器(THzQCL)的新型有源区设计策略。高的光学增益将转化为更好的激光性能，即高能量转换效率、高光输出功率和高器件工作温度。太赫兹光源处于光学和电子学的交界处，这三个方面对未来使用太赫兹光源的技术和应用都是至关重要的。太赫兹准共振激光器是目前为止在太赫兹光谱范围内发射的激光器中功率和紧凑性的最佳组合。自2002年首次展示以来，发射频率在1-10太赫兹之间的太赫兹QCL已经被报道在2-5太赫兹范围内具有最好的性能。然而，THzQCL的最新性能仅限于低光功率(1W)和低于200K的工作温度。在本项目的范围内，将讨论驱动激光增益的激光物理问题，包括激光能级的设计、电子注入、电子提取和布居反转。首先，我们将建立一个包括界面粗糙度散射和热电子效应在内的THzQCL中电子输运的实际模型。界面粗糙度散射是由半导体异质结中粗糙晶界引起的微扰势引起的。热电子效应是由于电子系统和晶格之间缓慢的热交换而产生的。这两种机制都降低了激光增益，降低了激光性能。其次，为了提高THzQCL的光学增益，我们将研究不同的方法来设计THzQCL的界面粗糙度散射。我们还将研究通过设计超热电子的传输来减少太赫兹量子发光中载流子泄漏的方法。最后，我们将提出并演示基于成熟的GaAs/AlGaAs异质结系统和新型半导体异质结系统的高增益THzQCL的新型有源区设计。