EAGER: Exploring silicon nitride for high speed electro-optic modulation

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This project will explore whether we can develop a electro-optic silicon nitride that is compatible withcomplementary metal oxide semiconductor (CMOS) fabrication. The ideal material for integratedphotonics is compatible with CMOS electronics, has a high refractive index, is deposited, electroopticallyactive, and low loss; however, current photonic platforms fall short of meeting thesecharacteristics. While silicon has revolutionized photonics over the last two decades because of its highrefractive index and relative compatibility with CMOS electronics, the silicon photonic platform, whichuses the plasma dispersion effect for refractive index modulation, is fundamentally limited by carrier loss.This fundamental loss limits the impact of silicon photonics in quantum information science, ultra-lowpower communications, and chip-based LIDAR. Silicon nitride is a CMOS compatible material with highrefractive index and low loss; however, it is passive. Electro-optic silicon nitride (EO-SiN) has thepotential to completely change the field of integrated photonics. If successful, one can envision an EOSiNplatform for modulation, low loss guiding, switching, and nonlinear functionalities all integrated on asingle chip.The proposed project will create a unique experience for one high school student from the Kearns CenterUpward Bound Program. The experience consists of a six-week internship during the summer. Thestudent will be immersed in the research group working on a project alongside other undergraduate,master's and PhD students. The goal of this effort is to expose one first-generation, low-income highschool student to STEM fields to motivate them to follow a career in math, science, and engineering. Thestudents will receive an integrated mentorship from McNair fellows (undergraduate students), master'sstudents, PhD students, and the PI as they reinforce and discover the excitement of working in cuttingedge research.Technical descriptionThe PI proposes to explore whether we can engineer an electro-optic effect in silicon nitride usingelectrical poling. As a proof-of-concept of the potential of electro-optic silicon nitride, we willdemonstrate a silicon nitride, on-chip, high-speed modulator. Understanding how to engineer an electroopticeffect in silicon nitride will bring forward a high refractive index, low loss, deposited material withCMOS compatibility and the ability to modulate the refractive index without inducing loss. It will clarifythe origin of previously observed second harmonic generation in silicon nitride, which is hypothesized tocome from either surface effects or the bulk properties of silicon nitride.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.