Tunable topological hybrid materials via interface- and topology-engineered heterostructures

通过界面和拓扑工程异质结构的可调谐拓扑混合材料

• 批准号: 2004125
• 负责人: Seongshik Oh
• 金额: $ 65万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-07-01 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2004125&HistoricalAwards=false
• 关键词: Tunable; topological; hybrid; materials; via

Nontechnical Description:A new class of materials called topological materials has emerged with attractive properties for making exotic electronic and quantum devices. However, these properties are affected by defects which hamper their potential applications. This project provides a novel way of controlling these defects as well as developing tunable hybrid materials by combining a variety of topological and non-topological materials. Availability of more topological materials with superior or new properties enables development of technology for quantum computing and quantum information. The project includes close collaboration with many other researchers. Postdocs, graduate and undergraduate students recruited from underrepresented groups receive training and mentoring to become next generation leaders in thin film quantum materials. Planned outreach activities to local elementary schools foster positive images of science and scientists to the broad community.Technical Description:Topology has emerged as a new paradigm of classifying electronic materials over the past decade, and a series of topological materials including topological insulators and topological semimetals have been discovered. However, native defects, working as self-dopants, have long been a major hurdle in the way to reaching the quantum regime of the topological states. In recent years, the principle investigator has demonstrated that majority of these defects originate from interfaces and with proper interface-engineering schemes, most of these defects can be eliminated. Furthermore, it was shown that topology and other critical properties of certain topological materials can be continuously tuned through thin film engineering schemes such as solid mixing and digital layering. However, most of the topological materials investigated so far have been thermodynamically-defined compounds. This project seeks to extend the boundary of topological materials beyond the thermodynamic limit and search for new topological phenomena by developing a series of tunable artificial topological materials with various thin film engineering schemes such as solid-mixing, digital-layering, dimensional confinement, and interfacial defect engineering. By combining a variety of interface and topology-engineering schemes, this project develops tunable topological hybrid materials and explore yet-to-be-discovered topological quantum effects, along two Thrusts: 1. Tunable artificial topological materials and 2. Tunable interfacial topological superconductors. These materials allow exploring the boundaries between kinetically vs thermodynamically-driven growth landscapes and uncovering new physics where topology, magnetism and superconductivity meet, including and beyond minimal magnetic Weyl semimetals, high temperature quantum anomalous Hall phase, axion insulators, and interfacial superconductivity.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性描述：一类称为拓扑材料的新材料已经出现，具有制造奇异电子和量子器件的吸引力。然而，这些性能受到阻碍其潜在应用的缺陷的影响。该项目提供了一种新的方法来控制这些缺陷，以及通过结合各种拓扑和非拓扑材料来开发可调杂化材料。具有上级或新性质的更多拓扑材料的可用性使得能够开发用于量子计算和量子信息的技术。该项目包括与许多其他研究人员的密切合作。从代表性不足的群体中招募的博士后，研究生和本科生接受培训和指导，成为薄膜量子材料的下一代领导者。有计划的外展活动，以当地小学培养积极的形象，科学和科学家的广泛的社会。技术说明：拓扑学在过去的十年中作为一种新的范式分类电子材料出现，并发现了一系列拓扑材料，包括拓扑绝缘体和拓扑半金属。然而，作为自掺杂剂的本征缺陷长期以来一直是实现拓扑态量子机制的主要障碍。近年来，主要研究者已经证明，这些缺陷中的大多数源于接口，并且通过适当的接口工程方案，这些缺陷中的大多数可以被消除。此外，它表明，某些拓扑材料的拓扑结构和其他关键属性可以通过薄膜工程计划，如固体混合和数字分层连续调整。然而，迄今为止研究的大多数拓扑材料都是化学定义的化合物。该项目旨在将拓扑材料的边界扩展到热力学极限之外，并通过开发一系列具有各种薄膜工程方案（如固体混合，数字分层，尺寸限制和界面缺陷工程）的可调人工拓扑材料来寻找新的拓扑现象。通过结合各种界面和拓扑工程方案，本项目开发可调拓扑杂化材料，并探索尚未发现的拓扑量子效应，沿着两个方向：1。可调人工拓扑材料; 2.可调界面拓扑超导体。这些材料允许探索动力学与动力学驱动的生长景观之间的边界，并揭示拓扑结构，磁性和超导性相遇的新物理学，包括并超越最小磁性Weyl半金属，高温量子反常霍尔相，轴子绝缘体，该奖项反映了NSF的法定使命，并被认为是值得通过使用基金会的知识产权进行评估的支持。优点和更广泛的影响审查标准。

项目成果

Infrared plasmons in ultrahigh conductive PdCoO2 metallic oxide

超高导电 PdCoO2 金属氧化物中的红外等离子体激元

• DOI: 10.1038/s42005-022-00924-0
• 发表时间: 2022
• 期刊: Communications Physics
• 影响因子: 5.5
• 作者: Macis, Salvatore;Tomarchio, Luca;Tofani, Silvia;Piccirilli, Federica;Zacchigna, Michele;Aglieri, Vincenzo;Toma, Andrea;Rimal, Gaurab;Oh, Seongshik;Lupi, Stefano
• 通讯作者: Lupi, Stefano

Diffusion-assisted molecular beam epitaxy of CuCrO2 thin films

CuCrO2 薄膜的扩散辅助分子束外延

• DOI: 10.1116/6.0002151
• 发表时间: 2022
• 期刊: Journal of Vacuum Science & Technology A
• 影响因子: 2.9
• 作者: Rimal, Gaurab;Mazza, Alessandro R.;Brahlek, Matthew;Oh, Seongshik
• 通讯作者: Oh, Seongshik

Spatial Interactions in Hydrogenated Perovskite Nickelate Synaptic Networks

• DOI: 10.1021/acs.nanolett.3c02076
• 发表时间: 2023-07-28
• 期刊: NANO LETTERS
• 影响因子: 10.8
• 作者: Bisht, Ravindra Singh;Park, Jaeseoung;Ramanathan, Shriram
• 通讯作者: Ramanathan, Shriram

Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect

通过氢化和符号可调反常霍尔效应有效还原 PdCoO2 薄膜

• DOI: 10.1103/physrevmaterials.5.l052001
• 发表时间: 2021
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: Rimal, Gaurab;Schmidt, Caleb;Hijazi, Hussein;Feldman, Leonard C.;Liu, Yiting;Skoropata, Elizabeth;Lapano, Jason;Brahlek, Matthew;Mukherjee, Debangshu;Unocic, Raymond R.
• 通讯作者: Unocic, Raymond R.

Anomalous Hall effect in electrolytically reduced PdCoO2 thin films

• DOI: 10.1016/j.tsf.2022.139197
• 发表时间: 2022-03
• 期刊: Thin Solid Films
• 影响因子: 2.1
• 作者: Yiting Liu;Gaurab Rimal;P. Narasimhan;Seongshik Oh