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FET: Small: Ferroelectric Transistor based Spiking Neural Networks with Adaptive Learning for Edge AI: from Devices to Algorithms

FET: Small: Ferroelectric Transistor based Spiking Neural Networks with Adaptive Learning for Edge AI: from Devices to Algorithms
FET:小型:基于铁电晶体管的尖峰神经网络,具有边缘人工智能自适应学习功能:从设备到算法
批准号:
2008412
负责人:
Sumeet Gupta
金额:
$50.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2020
资助国家:
美国
项目状态:
已结题
起止时间:
2020-06-15 至 2024-05-31

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英文摘要
Incorporating artificial intelligence (AI) in electronic systems has been widely recognized as one of the key enablers for several emerging applications. However, the energy efficiency and the learning capabilities of state-of-the-art AI systems is far from that achievable by human brains. This research undertakes a cross-layer exploration spanning novel devices, low-power neural networks, and new learning schemes. The exploration will exploit Ferroelectric Field Effect Transistor (FeFET) technology with intrinsic neuro-mimetic features to achieve energy-efficient neural hardware and adaptable learning. The low-power hardware solutions and adaptive-learning algorithms have the potential to impact critical applications such as computer-aided diagnosis, robotics, speech/face recognition, and data classification, thereby directly benefiting areas such as healthcare, defense, security etc. Moreover, power savings should translate to longer battery life for edge devices and energy-efficient data processing for applications like wearable health-monitoring platforms. The project will leverage outreach programs at Purdue University and develop a summer Research Experiences for Undergraduates (REU) program to involve undergraduates and minority students in the project. The broad nature of this project will provide opportunity for undergraduate students to get introduced to the field of AI based on emerging technologies.Spiking Neural Networks (SNNs), due to their self-learning capabilities, show promise in introducing adaptability in learning for AI systems, but suffer from low accuracy. Improving SNN accuracy and performance not only necessitates novel learning mechanisms that support adaptable lifelong learning, but also an intrinsically suitable technology for low-power scalable hardware. To address this critical need, this project will carry out a comprehensive devices-to-algorithms exploration of multi-domain FeFET based SNNs. The main objectives include (a) design of low-power neurons and synapses using FeFETs, and (b) development of adaptive and sequential learning algorithms utilizing the unique attributes of the neuro-mimetic devices. To enable bio-plausible features in FeFETs, physics-based device optimization will be carried out to utilize the multi-domain effects and domain dynamics of ferroelectrics. To facilitate cross-layer exploration, a devices-to-systems simulation framework will be developed capturing the rich dynamics of the neurons and synapses, their interactions in an SNN, and the impact of new learning algorithms on system performance/accuracy.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(15)
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会议论文
Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis
用于存储器和逻辑的 FEFET 中铁电厚度相关的域相互作用:基于相场模型的分析
DOI: 10.1109/iedm13553.2020.9372099
发表时间: 2020
期刊: International Electron Device Meetings (IEDM
影响因子: --
作者: [Saha, A. K., Si, M., Ni, K., Datta, S., Ye, P. D., Gupta, S. K.]
通讯作者: Gupta, S. K.
Variation and Stochasticity in Polycrystalline HZO based MFIM: Grain-Growth Coupled 3D Phase Field Model based Analysis
基于 MFIM 的多晶 HZO 的变化和随机性:基于晶粒生长耦合 3D 相场模型的分析
DOI: 10.1109/iedm19574.2021.9720564
发表时间: 2021
期刊: International Electron Device Meetings (IEDM
影响因子: --
作者: [Koduru, R., Saha, A. K., Si, M., Lyu, X., Ye, P. D., Gupta, S. K.]
通讯作者: Gupta, S. K.
Event-based Temporally Dense Optical Flow Estimation with Sequential Learning
具有顺序学习的基于事件的时间密集光流估计
DOI: --
发表时间: 2023
期刊: Proceedings of the IEEE/CVF International Conference on Computer Vision (ICCV
影响因子: --
作者: [Wachirawit Ponghiran, Chamika Mihiranga]
通讯作者: Wachirawit Ponghiran, Chamika Mihiranga
DOI: 10.1109/ted.2023.3270397
发表时间: 2023-06
期刊: IEEE Transactions on Electron Devices
影响因子: 3.1
作者: [Eunseon Yu;X. Lyu;M. Si;P. Ye;K. Roy]
通讯作者: Eunseon Yu;X. Lyu;M. Si;P. Ye;K. Roy
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