Collaborative Research: Non-Conventional Etching and MOCVD Regrowth for Beta-GaO/AlGaO 3D HEMTs

合作研究：Beta-GaO/AlGaO 3D HEMT 的非常规蚀刻和 MOCVD 再生长

• 批准号: 2200651
• 负责人: Xiuling Li
• 金额: $ 24.85万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-10-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2200651&HistoricalAwards=false
• 关键词: Collaborative; Research; Non; Conventional; Etching

Gallium oxide represents a promising semiconductor material for electronic devices concerning size scaling and performance enhancement especially for applications in high voltage, high temperature, and high frequency components. Both materials development and device fabrication based on this new semiconductor material is still at its infancy. This project explores the material growth and device processing to achieve a highly scalable radio frequency device with performance beyond the current device technology based on other semiconductor materials such as silicon, gallium nitride or silicon carbide. This project seeks to address the rising challenges in the etching and material growth process due to the complex atomic structure of this oxide semiconductor. Understanding of the fundamental etching mechanisms and materials growth process is critical to fully utilize the advantages offered by this emerging material system. A successful execution of this research is expected to provide a knowledge foundation to electronics industry with positive impacts on the US economy. The research is integrated with educational activities and outreach to benefit the broader community. The proposed education plans focus on integration of research and education, curriculum development, and student training. The results obtained from the proposed research will provide inspiring teaching materials and laboratory projects, to provide training of our next generation workforce for embracing emerging technologies. This project trains two graduate students in the areas of advanced semiconductor materials synthesis, material characterization, and device design and fabrication. The principal investigators (PIs) are strongly committed to promoting the participation of underrepresented groups including women in science and engineering, by creating an inclusive environment, active mentoring, and leading by examples. The proposed outreach activities focus on high school girls and teachers. Both PIs will continue to actively lead or be involved in existing education and outreach programs including the NSF Research Experience for Undergraduates (REU) and Research Experience for Teachers (RET) programs, local and IEEE Women in Engineering programs.Gallium oxide (Ga2O3; GaO), with high breakdown field strength, represents an emerging ultrawide bandgap semiconductor beyond silicon carbide and gallium nitride. The goal of the proposed research is to demonstrate a three-dimensional (3D) GaO/AlGaO high electron mobility transistor (HEMT) using a 3D channel formed by a non-conventional damage-free anisotropic etching technique (meta-assisted chemical etch; MacEtch) followed by metalorganic chemical vapor deposition (MOCVD) epitaxial regrowth of AlGaO. The scope of the research includes: i) realizing high aspect ratio Ga2O3 3D channel structures using the non-destructive MacEtch technology; ii) developing MOCVD growth, doping, and regrowth of AlGaO on the MacEtch-produced non-planar Ga2O3 structures; iii) characterizing the MacEtched Ga2O3 surfaces and the regrown GaO/AlGaO hetero-interfaces chemically, structurally, optically, and electrically; and iv) demonstrating GaO/AlGaO HEMTs with non-planar 3D channels. The proposed GaO/AlGaO HEMT structure, with the non-planar 3D topology and the complex monoclinic crystal structure, provides a unique platform to explore the crystal orientation dependent etching, growth rate, AlGaO composition, GaO/AlGaO interface defects, and dopant/impurity incorporation. The intellectual significance of the project will establish fundamental understanding of the carrier generation and mass transport properties in MacEtch of Ga2O3 as a function of metal catalyst pattern and its alignment with surface orientation, crystal doping concentration, and ultra-violet light illumination wavelength and intensity, as well as the etching mechanism for wide bandgap oxide semiconductors in general. Surface and interface characterization will provide insights in the contributing and limiting factors in vacancy and other defects related traps and establish control process for different device architecture requirements. Beyond the proposed program, the platform and innovative concepts to be explored can also be used for many other types of devices for size scaling and performance enhancement, including optoelectronics devices such as solar blind ultraviolet (UV) detectors and high temperature flame sensors.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

氧化衣代表了电子设备的一种有希望的半导体材料，涉及尺寸缩放和性能增强，尤其是对于高压，高温和高频组件的应用。基于这种新的半导体材料的材料开发和装置制造仍处于起步阶段。该项目探索了材料的生长和设备处理，以实现基于其他半导体材料（例如硅，硝酸盐或碳化硅）的当前设备技术以外的高度可扩展的射频设备。由于该氧化物半导体的复杂原子结构，该项目旨在解决蚀刻和材料生长过程中的挑战。了解基本蚀刻机制和材料生长过程对于充分利用这种新兴材料系统提供的优势至关重要。预计这项研究的成功执行将为电子行业提供知识基础，并对美国经济产生积极影响。这项研究与教育活动和宣传相结合，以使更广泛的社区受益。拟议的教育计划着重于研究和教育，课程发展和学生培训的整合。从拟议的研究中获得的结果将提供鼓舞人心的教材和实验室项目，为我们的下一代劳动力提供培训，以采用新兴技术。该项目在高级半导体材料合成，材料表征以及设备设计和制造方面训练两名研究生。首席研究人员（PIS）强烈致力于通过创造包容性环境，积极的指导并以例子为首，包括妇女在科学和工程中的代表性不足群体的参与。 拟议的外展活动的重点是高中女生和老师。这两个PI都将继续积极领导或参与现有的教育和宣传计划，包括NSF研究经验（REU）（REU）（REU）和教师的研究经验（RET）计划，工程课程中的本地和IEEE女性。拟议的研究的目的是证明使用由非惯性无损害的各向异性蚀刻技术（元辅助化学蚀刻）形成的3D通道，然后由金属有机化学Vaporga（Meta copial deporga）eptosection（Meceth）eptiration（Meceth），使用了三维（3D）GAO/ALGAO高电子迁移式晶体管（HEMT）。研究范围包括：i）使用非破坏性的Maceth技术实现高纵横比GA2O3 3D通道结构； ii）在Maceth生产的非平面GA2O3结构上发展藻类的MOCVD生长，掺杂和再生； iii）以化学，结构，光学和电气进行化学，结构，光学和电气以化学，藻类/藻类的杂词形状表征茶毛的GA2O3表面；和iv）用非平面3D通道展示GAO/藻类hemts。提出的具有非平面3D拓扑结构和复杂的单斜晶体结构的GAO/ALGAO HEMT结构提供了一个独特的平台，可探索依赖晶体方向的蚀刻，生长速率，藻类组成，GAO/Algao界面缺陷，以及掺杂剂/不含量。该项目的智力意义将建立对GA2O3 Maceth的载体产生和质量传输特性的基本理解，这是金属催化剂模式的函数及其与表面取向，晶体兴奋剂浓度以及超紫色光照明波长和强度的对齐，以及蚀刻机制，以及蚀刻的机制，以及宽带氧化氧化物半胶合剂。 表面和界面表征将提供有关空缺和其他缺陷相关陷阱的贡献和限制因素的见解，并为不同的设备体系结构要求建立控制过程。除了提出的计划之外，还可以将平台和创新概念用于许多其他类型的设备，用于尺寸缩放和增强性能，包括光电设备，例如Solar Blind Ultraviolet（UV）探测器（UV）检测器和高温传感器。该奖项反映了NSF的法定任务，并通过评估范围来进行评估，这表明了其范围的范围。

项目成果

Temperature dependent characteristics of β -Ga2O3 FinFETs by MacEtch

MacEtch 的 β -Ga2O3 FinFET 的温度相关特性

• DOI: 10.1063/5.0159420
• 发表时间: 2023
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Ren, Zhongjie;Huang, Hsien-Chih;Lee, Hanwool;Chan, Clarence;Roberts, Henry C.;Wu, Xihang;Waseem, Aadil;Bhuiyan, A F;Zhao, Hongping;Zhu, Wenjuan
• 通讯作者: Zhu, Wenjuan