Scalable Manufacturing of Single Crystalline Halide Perovskite Film via Interface Engineering

外延是一种在主衬底上生长取向明确的材料的过程，对于形成半导体微电子和可再生能源工业的有用材料至关重要。该奖项支持对远程外延的研究，其中通过具有不同结构和对称性的中间层在薄膜和衬底之间建立远程外延关系。远程外延潜在地允许薄膜的形成，薄膜可以从主衬底上移除并集成到其他系统中，从而增加了创新半导体器件设计的灵活性。该奖项着眼于使用一种新颖的非晶材料中间层，这将允许远程外延薄膜的可扩展制造。该奖项支持产生对可扩展性至关重要的基础知识的研究，包括抑制对后续应用至关重要的位错和晶界。研究了用于新兴光电子和能源与信息电子的晶片级单晶卤化物钙钛矿薄膜。该奖项将通过促进关键技术领域先进制造业的科学进步，使美国经济受益，促进国家繁荣。该奖项还将促进对代表性不足群体的工程研究培训和本科/研究生工程教育。该奖项建立了理论、计算和实验知识基础，使缺陷控制的晶圆级外延薄膜生长成为可能。采用迭代计算和实验方法，通过控制厚度和介电常数的超薄非晶缓冲层来调节薄膜-衬底相互作用，从而了解控制远程异质外延的原子机制。通过分子水平的模拟和结构/化学和光学/电学表征研究，对非晶缓冲层的厚度、化学和介电性质以及衬底的晶格失配对远程外延薄膜的应变、取向、缺陷、形貌和光/电子性质的作用有了基本的了解。实现晶圆级可转移外延薄膜缺陷控制的界面工程策略。该奖项将推进外延科学、界面工程和光电性质-结构关系的基础知识，对能源和电子应用具有重要技术意义的半导体卤化物钙钛矿。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Epitaxy is a process of growing a material of a well-defined orientation on a host substrate and is critical to forming useful materials for the semiconductor-based microelectronics and renewable energy industries. This award supports research into remote epitaxy in which an epitaxial relation is established remotely between film and substrate though an intervening layer possessing a different structure and symmetry than present at the interface. Remote epitaxy potentially allows for the formation of thin films which can be removed from the host substrate and integrated into other systems increasing flexibility in the design of innovative semiconductor devices. This award looks to the use of a novel intervening layer of amorphous materials which would allow the scalable manufacturing of remote epitaxial films. The award supports research generating basic knowledge important to scalability including suppressing dislocations and grain boundaries critical to the subsequent applications. Wafer-scale single crystalline halide perovskite films are studied for emerging optoelectronics and electronics for energy and information applications. This award will benefit the U.S. economy and advance national prosperity by promoting the progress of science in advanced manufacturing within critical technologies. The award will also promote engineering research training of underrepresented groups and undergraduate/graduate engineering education.The award establishes the theoretical, computational, and experimental knowledge bases enabling defect-controlled wafer-scale epitaxial thin film growth. Iterative computational and experimental approaches are used to understand the atomic mechanisms controlling remote heteroepitaxy by tuning the film-substrate interaction through use of ultrathin amorphous buffer layers of controlled thickness and dielectric constant. Supported by molecular-level simulations and structural/chemical and optical/electrical characterization studies, a basic understanding is developed on the role of thickness, chemistry and dielectric properties of the amorphous buffer layer and lattice mismatch of substrate on strain, orientation, defects, morphology and optoelectronic/electronic property of remote epitaxial films. An interface engineering strategy to achieve defects-controlled wafer-scale transferable epitaxial thin film. The award will advance the fundamental knowledge of epitaxy science, interface engineering and optoelectronic property-structure relation of technologically important semiconducting halide perovskites for energy and electronic applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.