Scalable Manufacturing of Single Crystalline Halide Perovskite Film via Interface Engineering

通过界面工程大规模制造单晶卤化物钙钛矿薄膜

• 批准号: 2024972
• 负责人: Jian Shi
• 金额: $ 41.97万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-09-01 至 2024-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2024972&HistoricalAwards=false
• 关键词: Scalable; Manufacturing; Single; Crystalline; Halide

Epitaxy is a process of growing a material of a well-defined orientation on a host substrate and is critical to forming useful materials for the semiconductor-based microelectronics and renewable energy industries. This award supports research into remote epitaxy in which an epitaxial relation is established remotely between film and substrate though an intervening layer possessing a different structure and symmetry than present at the interface. Remote epitaxy potentially allows for the formation of thin films which can be removed from the host substrate and integrated into other systems increasing flexibility in the design of innovative semiconductor devices. This award looks to the use of a novel intervening layer of amorphous materials which would allow the scalable manufacturing of remote epitaxial films. The award supports research generating basic knowledge important to scalability including suppressing dislocations and grain boundaries critical to the subsequent applications. Wafer-scale single crystalline halide perovskite films are studied for emerging optoelectronics and electronics for energy and information applications. This award will benefit the U.S. economy and advance national prosperity by promoting the progress of science in advanced manufacturing within critical technologies. The award will also promote engineering research training of underrepresented groups and undergraduate/graduate engineering education.The award establishes the theoretical, computational, and experimental knowledge bases enabling defect-controlled wafer-scale epitaxial thin film growth. Iterative computational and experimental approaches are used to understand the atomic mechanisms controlling remote heteroepitaxy by tuning the film-substrate interaction through use of ultrathin amorphous buffer layers of controlled thickness and dielectric constant. Supported by molecular-level simulations and structural/chemical and optical/electrical characterization studies, a basic understanding is developed on the role of thickness, chemistry and dielectric properties of the amorphous buffer layer and lattice mismatch of substrate on strain, orientation, defects, morphology and optoelectronic/electronic property of remote epitaxial films. An interface engineering strategy to achieve defects-controlled wafer-scale transferable epitaxial thin film. The award will advance the fundamental knowledge of epitaxy science, interface engineering and optoelectronic property-structure relation of technologically important semiconducting halide perovskites for energy and electronic applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

外延是在衬底上生长具有明确取向的材料的过程，对于形成用于半导体微电子和可再生能源行业的有用材料至关重要。该奖项支持对远程外延的研究，在远程外延中，通过具有不同于界面处存在的结构和对称性的介质层，在薄膜和衬底之间远程建立外延关系。远程外延可能允许形成薄膜，这些薄膜可以从宿主衬底上移除并集成到其他系统中，从而增加了创新半导体器件设计的灵活性。该奖项旨在使用一种新型的非晶态材料介质层，使远程外延薄膜的可伸缩制造成为可能。该奖项支持产生对可伸缩性重要的基础知识的研究，包括抑制位错和晶界，这些知识对后续应用至关重要。晶片规模的单晶卤化物钙钛矿薄膜被研究用于新兴的光电子学和能源和信息应用的电子学。该奖项将通过促进关键技术领域先进制造业的科学进步，使美国经济受益，促进国家繁荣。该奖项还将促进对代表性不足群体的工程研究培训和本科生/研究生工程教育。该奖项建立了能够实现缺陷控制的晶片规模外延薄膜生长的理论、计算和实验知识基础。采用迭代的计算和实验方法，通过控制厚度和介电常数的超薄非晶缓冲层来调节薄膜-衬底的相互作用，从而理解控制远程异质外延的原子机制。在分子水平模拟和结构/化学和光学/电学表征研究的支持下，对非晶态缓冲层的厚度、化学和介电性能以及衬底的晶格失配对远距离外延薄膜的应变、取向、缺陷、形貌和光电性能的影响有了基本的认识。一种界面工程策略，以实现缺陷可控的晶片尺度可转移外延薄膜。该奖项将促进外延科学、界面工程和用于能源和电子应用的具有重要技术意义的半导体卤化物钙钛矿的光电性质-结构关系的基础知识。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Three-dimensional morphology and elastic strain revealed in individual photoferroelectric SbSI nanowire

单个光铁电 SbSI 纳米线揭示的三维形貌和弹性应变

• DOI: 10.1557/s43577-022-00445-9
• 发表时间: 2023
• 期刊: MRS Bulletin
• 影响因子: 5
• 作者: Schold, Elijah;Barringer, Zachary;Shi, Xiaowen;Williams, Skye;Nazirkar, Nimish Prashant;Wang, Yiping;Hu, Yang;Shi, Jian;Fohtung, Edwin
• 通讯作者: Fohtung, Edwin

Flexo-photovoltaic effect in MoS2

• DOI: 10.1038/s41565-021-00919-y
• 发表时间: 2021-06-17
• 期刊: NATURE NANOTECHNOLOGY
• 影响因子: 38.3
• 作者: Jiang, Jie;Chen, Zhizhong;Shi, Jian
• 通讯作者: Shi, Jian

Composition gradient-enabled circular photogalvanic effect in inogranic halide perovskites

• DOI: 10.1063/5.0083187
• 发表时间: 2022-05
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Ru Jia;Jie Jiang;Lifu Zhang;Yang Hu;S. Pendse;Yuwei Guo;Jian Shi

Growth of van der Waals Halide Perovskites within the Interlayer Spacings of Mica

• DOI: 10.1021/acs.jpcc.2c06379
• 发表时间: 2022-11
• 期刊: The Journal of Physical Chemistry C
• 作者: S. Pendse;Yang Hu;Ru Jia;Zhizhong Chen;Lifu Zhang;S. Williams;Jie Jiang;E. Fohtung;Jian Shi

Applicability of coherent x-ray diffractive imaging to ferroelectric, ferromagnetic, and phase change materials

相干 X 射线衍射成像对铁电、铁磁和相变材料的适用性

• DOI: 10.1063/5.0072399
• 发表时间: 2022
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Shi, Xiaowen;Shi, Jian;Fohtung, Edwin
• 通讯作者: Fohtung, Edwin