Van der Waals Halide Perovskite Photo-ferroelectric Synapse

范德华卤化物钙钛矿光铁电突触

• 批准号: 1916652
• 负责人: Jian Shi
• 金额: $ 41.76万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-14 至 2023-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1916652&HistoricalAwards=false
• 关键词: Van; der; Waals; Halide; Perovskite

Nontechnical:Artificial intelligence is transforming our lives. Even at the earliest stages of commercialization, we have seen the power and potential of AI to support workers, diagnose diseases, and improve national security. Conventional digital computers are not efficient for brain-like (neuromorphic) computing such as artificial neural networks, which creates a tremendous power demands. The next stage of artificial intelligence requires devices and circuits that mimic biological processes. In particular, synaptic devices must be capable of learning in hardware. They must retain distinguishable states, be suitable for parallel computing and operate at high speed and low power. Previous attempts at such devices have been limited by disruption of the synapse memory during read operations. Essentially, the act of remembering can cause the synaptic device to forget. This award supports fundamental research to explore a new synaptic mechanism that circumvents this issue. These devices will be based on the ferroelectric materials, which have a spontaneous polarization that can be reversed by an applied electric field. This polarization can be read nondestructively by light, fulfilling the requirement for a synaptic device. These synaptic devices will be made from perovskites, materials with organic and inorganic components that are loosely bound by van der Waals forces. This approach will enable the realization of high-performance synaptic devices by informing the selection of materials, devices and circuits for neuromorphic computing. The results from this award will thereby benefit the U.S. economy, national security and health by enabling fundamental advances in the science and technology of artificial intelligence. The PI will also introduce and disseminate knowledge on materials and devices to enable AI by outreach to K-12 students.Technical:The research objective of this project is to explore, understand and exploit the synaptic memory property and characteristics in photo-ferroelectric devices based on van der Waals halide perovskites-based for the development of artificial synapses with designed plasticity. The key idea is to exploit the non-volatile photo-ferroelectric switching in high quantum efficiency multifunctional perovskites with devices in crossbar architecture. Van der Waals halide perovskites carry both ferroelectricity and semiconducting property from separate functional groups so one could decouple and optimize both properties. In this project, the PIs will predict and understand the intrinsic/extrinsic properties of materials proposed under external stimuli, and evaluate and understand the device characteristics and performance. The PIs will synthesize thin film high quantum efficiency halide perovskite materials, fabricate two-terminal artificial synapses/circuits, study atomic structures and fundamental physical properties, determine device performance including switching speed, retention time, dynamic window, number of distinguishable states, energy consumption per synaptic event, endurance, and test/optimize the synaptic device and circuit for simulating spike-timing-dependent plasticity. This work will therefore advance knowledge of fundamental material physics, synaptic switching dynamics as well as ideal circuit architectures of novel photo-ferroelectric devices based on layered halide perovskite materials.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性：人工智能正在改变我们的生活。即使在商业化的最早阶段，我们也看到了AI支持工人，诊断疾病和改善国家安全的力量和潜力。传统的数字计算机对于大脑样（神经形态）计算（例如人工神经网络）并不有效，这会产生巨大的功率需求。人工智能的下一个阶段需要模仿生物学过程的设备和电路。特别是，突触设备必须能够在硬件中学习。他们必须保留可区分的状态，适合并行计算，并以高速和低功率运行。以前在此类设备的尝试受到读取操作过程中突触内存的破坏受到限制。本质上，记忆的行为会导致突触设备忘记。该奖项支持基本研究，以探索一种绕过这个问题的新突触机制。这些设备将基于铁电材料，这些材料具有自发极化，可以被施加的电场逆转。可以通过光线读取这种极化，从而满足突触设备的需求。这些突触设备将由钙钛矿，带有有机和无机成分的材料制成，这些材料由范德华力松散地束缚。这种方法将通过告知选择材料，设备和电路来实现高性能突触设备。该奖项的结果将通过在人工智能科学和技术方面取得基本进步，从而使美国经济，国家安全和健康受益。 PI还将引入和传播有关材料和设备的知识，以通过向K-12学生推出来启用AI。技术：该项目的研究目标是探索，理解和利用基于基于设计塑料的Artabless开发的基于设计塑料的开发的基于光的范德Waals Halide Perovskite中的光效力设备中的突触记忆和特征。关键的想法是利用高量子效率多功能孔隙式孔孔中的非挥发性光有线切换，并在横杆架构中使用设备。范德华卤化物钙钛矿同时携带来自单独的官能团的铁电性和半导体性能，因此人们可以将两种特性解次和优化。在该项目中，PI将预测和理解外部刺激下提出的材料的内在/外在特性，并评估和理解设备的特征和性能。 The PIs will synthesize thin film high quantum efficiency halide perovskite materials, fabricate two-terminal artificial synapses/circuits, study atomic structures and fundamental physical properties, determine device performance including switching speed, retention time, dynamic window, number of distinguishable states, energy consumption per synaptic event, endurance, and test/optimize the synaptic device and circuit for simulating spike-timing-dependent plasticity.因此，这项工作将进一步了解基本材料物理，突触开关动力学以及基于分层的卤化物钙钛矿材料的新型照片 - 专制设备的理想电路体系结构。该奖项反映了NSF的法定任务，并被认为是通过基金会的智力功能和广泛影响的评估来评估Criteria criteria criteria criteria criteria criteria。

项目成果

van der Waals Ferroelectric Halide Perovskite Artificial Synapse

• DOI: 10.1103/physrevapplied.18.014014
• 发表时间: 2022-07
• 期刊: Physical Review Applied
• 影响因子: 4.6
• 作者: Yao Cai;Yang Hu;Zhizhong Chen;Jie Jiang;Lifu Zhang;Yuwei Guo;S. Pendse;Ru Jia;Jiahe Zhang-Jiahe

Unit-Cell-Thick Oxide Synthesis by Film-Based Scavenging

通过基于薄膜的清除法合成单胞厚氧化物

• DOI: 10.1021/acs.jpcc.0c00578
• 发表时间: 2020-03
• 期刊: J. Phys. Chem. C
• 作者: Saloni Pendse;Jie Jiang;Yuwei Guo;Lifu Zhang;Zhizhong Chen;Zonghuan Lu;Yu;ong Wang;Yang Hu;Songman Li;Jing Feng;Toh-Ming Lu;Yi-Yang Sun;Jian Shi
• 通讯作者: Jian Shi

Tuning phase transition kinetics via van der Waals epitaxy of single crystalline VO2 on hexagonal-BN

通过六方氮化硼上单晶 VO2 的范德华外延调整相变动力学

• DOI: 10.1016/j.jcrysgro.2020.125699
• 发表时间: 2020-08
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: Saloni Pendse;Jie Jiang;Lifu Zhang;Yuwei Guo;Zhizhong Chen;Yang Hu;Zonghuan Lu;Songman Li;Jing Feng;Toh-Ming Lu;Jian Shi
• 通讯作者: Jian Shi

A Van Der Waals Photo‐Ferroelectric Synapse

• DOI: 10.1002/aelm.202200326
• 发表时间: 2022-06
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: Yao Cai;Lifu Zhang;Jie Jiang;Yang Hu;Zhizhong Chen;Ru Jia;Chengliang Sun;Jian Shi

Unit-cell-thick domain in free-standing quasi-two-dimensional ferroelectric material

• DOI: 10.1103/physrevmaterials.5.044403
• 发表时间: 2021-04
• 期刊: Physical Review Materials
• 影响因子: 3.4
• 作者: Yuwei Guo;B. Goodge;Lifu Zhang;Jie Jiang;Yu Chen;L. Kourkoutis;Jian Shi