CAREER: A novel Gallium Oxide based transistor for low-waste power conversion applications

职业：一种新型氧化镓基晶体管，用于低浪费功率转换应用

• 批准号: 2043803
• 负责人: Elaheh Ahmadi
• 金额: $ 50万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-02-01 至 2026-01-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2043803&HistoricalAwards=false
• 关键词: CAREER; novel; Gallium; Oxide; based

Proposal Number: 2043803Principal Investigator: Elaheh Ahmadi, Title: CAREER: A novel Gallium Oxide based transistor for low-waste power conversion applicationsInstitution: University of MichiganNontechnical AbstractThere is an urgent need for new device technologies to efficiently manage and distribute electrical power in the 2000V-20000V voltage range. The current technology, however, can no longer meet the efficiency and reliability requirements for these high-power electronic applications. The proposed ultra-high voltage switch will enable efficient high-power switches in the 2000V-20000V voltage range, which is required in many systems, including distributed grid systems, industrial automation, electric vehicles, and electrical mass transit including high-speed trains. The integrated education plan aims to motivate young students, especially female students and those from the underrepresented groups, to pursue STEM studies and careers by direct participation in the proposed research activities. The tutorials prepared for high school students will be made widely available on PI’s research website and YouTube. The scientific results will be disseminated in the form of articles in technical journals, conference presentations, and university seminars.Technical AbstractThe goal of this program is to demonstrate E-mode β-Ga2O3 fin field-effect transistors (FinFETs) with breakdown voltages beyond 3kV, specific on-resistance lower than 1 milli-ohm-cm-square switching efficiency higher than 98% at 15kHz frequency. The scientific goals of this CAREER plan are (i) A thorough investigation and experimentation into the impact of slanted-sidewall and N implantation in the inter-fin areas on electric fields to enhance breakdown voltage. (ii) Fabrication and characterization of FinFETs on both metal-organic chemical vapor deposition (MOCVD)-grown and halide vapor phase epitaxy (HVPE)-grown epi-structure to analyze and compare the impact of growth technique, and material quality on device performance. This study assists in selecting the appropriate growth technique for each process module in the future. (iii) A systematic study of the substrate thickness impact on device characteristics such as Ron. (iv) Development of β-(Al,Ga)2O3 regrowth on the fin sidewalls by plasma-assisted molecular beam epitaxy (PAMBE) and a complete investigation of the impact of regrowth conditions on electron mobility in the channel, interface trap density, and FinFET characteristics. This will be the first demonstration of sidewall regrowth in this material system. (v) Development of robust and reliable Hf(Si)O2 dielectrics by PAMBE as well as investigation and analysis of deposition conditions on dielectric quality (breakdown, dielectric constant, leakage, etc.). This will be the first demonstration of in-situ dielectric deposition in this material system.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

提案编号：2043803首席研究员：Elaheh Ahmadi，标题：职业：一种用于低浪费功率转换应用的新型基于镓氧化物的晶体管机构：美国密歇根大学非技术摘要迫切需要新的器件技术来有效地管理和分配2000 V-20000 V电压范围内的电力。然而，目前的技术已经不能满足这些大功率电子应用的效率和可靠性要求。拟议的超高压开关将实现2000 V-20000 V电压范围内的高效高功率开关，这是许多系统所需的，包括分布式电网系统、工业自动化、电动汽车和包括高速列车在内的电气公共交通。综合教育计划旨在激励年轻学生，特别是女生和来自代表性不足群体的学生，通过直接参与拟议的研究活动，从事STEM研究和职业。为高中生编写的教程将在PI的研究网站和YouTube上广泛提供。本项目的目标是研制出击穿电压超过3 kV、比导通电阻低于1毫欧姆·厘米-平方、开关效率高于98%、频率为15 kHz的E型β-Ga 2 O 3鳍式场效应晶体管（FinFET）。本事业计划的科学目标为（i）深入研究及实验鳍间区域的倾斜侧壁及N注入对电场的影响，以提高击穿电压。(ii)在金属有机化学气相沉积（MOCVD）生长和卤化物气相外延（HVPE）生长的外延结构上制造和表征FinFET，以分析和比较生长技术和材料质量对器件性能的影响。这项研究有助于选择适当的增长技术，为每个过程模块在未来。(iii)系统研究了衬底厚度对器件特性的影响，如罗恩。(iv)通过等离子体辅助分子束外延（PAMBE）在鳍片侧壁上进行β-（Al，Ga）2 O3再生长，并全面研究再生长条件对沟道中电子迁移率、界面陷阱密度和FinFET特性的影响。这将是该材料系统中侧壁再生长的第一次演示。(v)通过PAMBE开发坚固可靠的Hf（Si）O2薄膜，并研究和分析沉积条件对介电质量（击穿、介电常数、泄漏等）的影响。这将是该材料系统中原位电介质沉积的首次演示。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

• DOI: 10.1063/5.0126698
• 发表时间: 2022-12-26
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Oshima, Yuichi;Ahmadi, Elaheh
• 通讯作者: Ahmadi, Elaheh

Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga 2 O 3 (001)

β-Ga 2 O 3 (001) 上 MOCVD 生长的 AlSiO 栅极电介质的表征

• DOI: 10.1063/5.0048990
• 发表时间: 2021
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Jian, Zhe;Sayed, Islam;Liu, Wenjian;Mohanty, Subhajit;Ahmadi, Elaheh
• 通讯作者: Ahmadi, Elaheh