Class-G based envelope tracking system for high-efficiency transmitters in mobile communications
Class-G based envelope tracking system for high-efficiency transmitters in mobile communications
批准号:
245125925
负责人:
Dr. Olof Bengtsson, Ph.D.
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2014
资助国家:
德国
项目状态:
已结题
起止时间:
2013-12-31 至 2016-12-31
中文摘要
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英文摘要
An energy-efficient power amplifier (PA) system for the wireless communications infrastructure will be developed that is making use of class-G supply modulation, an envelope-tracking mode with discrete voltage levels. With high output powers in the 100 W range, the system is addressing the important large-area network coverage in future telecommunications. The goal is to achieve more than 50% efficiency and at least 60 MHz bandwidth at a carrier frequency of 2.65 GHz, while meeting the linearity requirements for the long-term evolution (LTE) standard. The project is spanning over all levels in the system design, from transistor and PA design to modulator topology and system linearization. Compared to existing solutions a clear advantage is expected especially with regard to bandwidth and linearity. Both the GaN transistors and the PA circuit will be optimized for variable supply voltage. Power efficiency of the class-G modulator will be improved by innovative driving concepts. Work on the linearization techniques for the overall setup will ensure suitability for modern mobile communication standards.The competences of the three proposers from INT and FBH constitute an ideal combination for this work. INT will be focusing on the class-G modulator and FBH will address the RF power amplifier and transistor optimization. All proposers will closely cooperate on the system integration and linearization. FBH will use an approach based on measurement equipment, while INT will implement their solutions in dedicated real-time hardware that is developed within the project.
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A Novel Model for Digital Predistortion of Discrete Level Supply-Modulated RF Power Amplifiers
离散电平电源调制射频功率放大器数字预失真的新模型
DOI:
10.1109/lmwc.2016.2517445
发表时间:
2016
期刊:
IEEE Microwave and Wireless Components Letters
影响因子:
3
作者:
[N. Wolff, W. Heinrich, O. Bengtsson]
通讯作者:
O. Bengtsson
A three-level class-G modulated 1.85 GHz RF power amplifier for LTE applications with over 50% PAE
A%20三级%20G级%20调制%201%2085%20GHz%20RF%20power%20放大器%20for%20LTE%20applications%20with%20over%2050%%20PAE
DOI:
10.1109/mwsym.2016.7540389
发表时间:
2016
期刊:
2016 IEEE MTT-S International Microwave Symposium (IMS)
影响因子:
--
作者:
[N. Wolff, W. Heinrich, M. Berroth, O. Bengtsson]
通讯作者:
O. Bengtsson
100-MHz GaN-HEMT Class-G Supply Modulator for High-Power Envelope-Tracking Applications
适用于高功率包络跟踪应用的 100MHz GaN-HEMT G 类电源调制器
DOI:
10.1109/tmtt.2016.2633987
发表时间:
2017
期刊:
IEEE Transactions on Microwave Theory and Techniques
影响因子:
4.3
作者:
[Nikolai, Heinrich, Wolfgang, Bengtsson]
通讯作者:
Bengtsson
Discrete gate bias modulation of a class-G modulated RF power amplifier
G 类调制射频功率放大器的离散栅极偏置调制
DOI:
10.1109/eumc.2016.7824471
发表时间:
2016
期刊:
2016 46th European Microwave Conference (EuMC)
影响因子:
--
作者:
[N. Wolff, W. Heinrich, O. Bengtsson]
通讯作者:
O. Bengtsson
Broadband Switch-Mode Radio Frequency Power Amplifiers using Tunable Ferroelectric Thick-Film Components
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批准号:190081167
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项目类别:Research Grants
-
资助金额:$0.0万
-
财政年份:2011
-
负责人:Dr. Olof Bengtsson, Ph.D.
-
依托单位:
国内基金
海外基金
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