Broadband Switch-Mode Radio Frequency Power Amplifiers using Tunable Ferroelectric Thick-Film Components
Broadband Switch-Mode Radio Frequency Power Amplifiers using Tunable Ferroelectric Thick-Film Components
批准号:
190081167
负责人:
Dr. Olof Bengtsson, Ph.D.
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2011
资助国家:
德国
项目状态:
已结题
起止时间:
2010-12-31 至 2017-12-31
中文摘要
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英文摘要
This project covers fundamental investigations on thermal effects in novel ferroelectric (Barium Strontium Titanate) varactors for RF amplifiers when exposed to high power at high frequencies. In addition, one major objective is to achieve efficient RF- and DC-decoupling for dynamic biasing. This is aimed to be accomplished by enhanced varactor layouts, in uniplanar as well as multilayer structures by considering coupled electrical and thermal properties at the same time, and by using different material preparation methods for thick-film and bulk ceramics. Special attention is put to reduce thermal resistance by using alternative substrate materials and a high-power package. Especially the high-power package requires dedicated investigations, as it influences the electrical as well as thermal properties of the device. The novel varactors will be modeled, characterized and optimized under large signal operation. Reliable models will be developed to enable simulation of tunable circuits at different temperatures as well as different power levels.As a proof-of-concept, a demonstrator integrating tunable matching networks into GaN-HEMT based power amplifiers with output power up to 50 W will be designed for a telecom band in the 0.9 to 3.0 GHz range. Efficiency and linearity of the tunable power amplifier will be investigated with signals up to 20 MHz bandwidth for the first time. Novel varactor biasing and RF- and DC-decoupling will be realized for dynamic operation and first dynamic behavior will be investigated using two-tone signals in large-scale operation.
期刊论文(6)
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Wideband tunable GaN HEMT module utilizing thin-film BST varactors for efficiency optimization
利用薄膜 BST 变容二极管实现效率优化的宽带可调谐 GaN HEMT 模块
DOI:
10.1109/mwsym.2016.7540375
发表时间:
2016
期刊:
2016 IEEE MTT-S International Microwave Symposium (IMS)
影响因子:
--
作者:
[A. Wiens, S. Preis, C. Schuster, M. Nikfalazar, C. Damm, M. Schuessler, W. Heinrich, O. Bengtsson, R. Jakoby]
通讯作者:
R. Jakoby
Thick-film MIM BST varactors for GaN power amplifiers with discrete dynamic load modulation
用于具有离散动态负载调制的 GaN 功率放大器的厚膜 MIM BST 变容二极管
DOI:
10.1109/mwsym.2017.8059097
发表时间:
2017
期刊:
2017 IEEE MTT-S International Microwave Symposium (IMS)
影响因子:
--
作者:
[S. Preis, D. Kienemund, N. Wolff, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson]
通讯作者:
O. Bengtsson
Discrete RF-power MIM BST thick-film varactors
分立射频功率 MIM BST 厚膜变容二极管
DOI:
10.1109/eumc.2015.7345919
发表时间:
2015
期刊:
2015 European Microwave Conference (EuMC)
影响因子:
--
作者:
[S. Preis, A. Wiens, D. Kienemund, D. Kendig, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson]
通讯作者:
O. Bengtsson
Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers
使用 BST 和 GaN 器件实现高效功率放大器的负载调谐辅助离散级电源调制
DOI:
10.1109/mwsym.2018.8439135
发表时间:
2018
期刊:
2018 IEEE/MTT-S International Microwave Symposium - IMS
影响因子:
--
作者:
[S. Preis, N. Wolff, F. Lenze, A. Wiens, R. Jakoby, W. Heinrich, O. Bengtsson]
通讯作者:
O. Bengtsson
Response time of VSWR protection for GaN HEMT based power amplifiers
基于 GaN HEMT 的功率放大器的 VSWR 保护的响应时间
DOI:
10.1109/eumc.2016.7824364
发表时间:
2016
期刊:
2016 46th European Microwave Conference (EuMC)
影响因子:
--
作者:
[S. Preis, J. Ferretti, N. Wolff, A. Wiens, R. Jakoby, W. Heinrich, O. Bengtsson]
通讯作者:
O. Bengtsson
共 6 条
Class-G based envelope tracking system for high-efficiency transmitters in mobile communications
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批准号:245125925
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项目类别:Research Grants
-
资助金额:$0.0万
-
财政年份:2014
-
负责人:Dr. Olof Bengtsson, Ph.D.
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依托单位:
国内基金
海外基金
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