Two-Dimensional Amorphous Carbon with Tunable Atomic Structures As A Novel Dielectric Material for Advanced Electronic Applications

具有可调原子结构的二维非晶碳作为先进电子应用的新型介电材料

基本信息

  • 批准号:
    2139185
  • 负责人:
  • 金额:
    $ 70.05万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2022
  • 资助国家:
    美国
  • 起止时间:
    2022-03-01 至 2026-02-28
  • 项目状态:
    未结题

项目摘要

Non-Technical DescriptionAtomically thin electronic materials developed recently could transform the current semiconductor industry built on bulk silicon and enable more powerful electronic devices with their extremely scaled thickness and unique physical properties. However, the synthesis of atomically thin insulators with controllable atomic structures and electrical properties is a significant challenge. This research projects seeks to develop a unique process to prepare atomically thin carbon-based insulators from solution-processable precursors. Their atomic structures can be adjusted to optimize their properties for different demanding applications in electronics. The thickness of the prepared insulating thin films can be precisely controlled down to atomic resolution, and they can be formed with excellent uniformity across the whole surface of semiconductor wafers. Results from this project shed light on the structure-property relationship for atomically thin solids that lacks an ordered internal structure, and could technologically lead to faster, more powerful, and more portable cell phones and computers. The project provides summer research internships for local high-school students from underrepresented groups and helps to develop a hands-on module with focus on the application of machine learning in material characterizations for undergraduates. These outreach opportunities prepare sustainable, adaptable, and globally competitive science and engineering workforce to benefit US economy.Technical DescriptionThe objective of this project is to develop two-dimensional (2D) amorphous carbon with unique atomic structures and material properties as a novel and transformative dielectric material for advanced electronic applications. The project starts from developing a unique process to prepare 2D amorphous carbon monolayer with tunable degree of medium range ordering, based on the tiling and cross-linking of zero-dimensional carbon dots with intrinsic crystalline-amorphous core-shell structure as solution-processable precursors. Layer-by-layer deposition further enables the precise control over the film thickness at atomic resolution. Scientifically, the unique properties of the atomically thin 2D amorphous carbon will be correlated with the detailed atomic structures combining material characterizations, high-resolution transmission electron microscopy, and density-functional theory simulation. Technologically, the 2D amorphous carbon monolayers and multilayers are used as the key dielectric component in 2D material-based transistors and memristors to enable enhanced device performance and reduced variability compared to their counterparts built on bulk metal oxides.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
非技术描述最近开发的原子薄电子材料可以改变目前建立在体硅上的半导体工业,并以其极薄的厚度和独特的物理特性实现更强大的电子器件。 然而,合成具有可控原子结构和电学性质的原子级薄绝缘体是一个重大挑战。 该研究项目旨在开发一种独特的工艺,从可溶液加工的前体制备原子级薄的碳基绝缘体。 它们的原子结构可以进行调整,以优化其性能,以满足电子领域不同要求的应用。 所制备的绝缘薄膜的厚度可以精确地控制到原子分辨率,并且它们可以在半导体晶片的整个表面上以优异的均匀性形成。 该项目的结果揭示了缺乏有序内部结构的原子级薄固体的结构-性质关系,并可能在技术上导致更快,更强大,更便携的手机和电脑。 该项目为来自代表性不足群体的当地高中生提供暑期研究实习机会,并帮助开发一个实践模块,重点是机器学习在本科生材料表征中的应用。 这些拓展机会准备可持续的,适应性强,并具有全球竞争力的科学和工程劳动力,以造福美国economy.Technical DescriptionThe本项目的目标是开发二维(2D)无定形碳与独特的原子结构和材料性能作为一种新型的和变革性的电介质材料先进的电子应用。 该项目从开发一种独特的工艺开始,以制备具有可调中程有序度的2D非晶碳单层,基于具有内在晶体-非晶核-壳结构的零维碳点的平铺和交联作为溶液可加工的前体。 逐层沉积进一步使得能够以原子分辨率精确控制膜厚度。 科学上,原子级薄的2D非晶碳的独特性质将与结合材料表征、高分辨率透射电子显微镜和密度泛函理论模拟的详细原子结构相关联。 从技术上讲,二维非晶碳单层和多层膜被用作二维材料基晶体管和忆阻器的关键介电元件,与基于大块金属氧化物的同类产品相比,能够增强器件性能并降低可变性。该奖项反映了NSF的法定使命,并通过使用基金会的智力价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics
  • DOI:
    10.1038/s44172-023-00141-9
  • 发表时间:
    2023-12
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Fufei An;Congjun Wang;Viet Hung Pham;A. Borisevich;Jiangchao Qian;Kaijun Yin;Saran Pidaparthy
  • 通讯作者:
    Fufei An;Congjun Wang;Viet Hung Pham;A. Borisevich;Jiangchao Qian;Kaijun Yin;Saran Pidaparthy
CMOS-compatible electrochemical synaptic transistor arrays for deep learning accelerators
  • DOI:
    10.1038/s41928-023-00939-7
  • 发表时间:
    2023-03-27
  • 期刊:
  • 影响因子:
    34.3
  • 作者:
    Cui, Jinsong;An, Fufei;Cao, Qing
  • 通讯作者:
    Cao, Qing
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Qing Cao其他文献

Morphology of the abdominal segmental glands and spinning behaviour of Stenus larvae (Coleoptera, Staphylinidae).
腹节腺的形态和 Stenus 幼虫(鞘翅目,葡萄科)的旋转行为。
Efficiency Centric Communication Model for Wireless Sensor Networks
无线传感器网络以效率为中心的通信模型
Effect of Crystallographic Anisotropy on Phase Transformation and Tribological Properties of Ni-Rich Niti Shape Memory Alloy Fabricated by Lpbf
晶体各向异性对Lpbf制备富镍镍钛形状记忆合金相变和摩擦学性能的影响
  • DOI:
    10.2139/ssrn.4200154
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    G. Shi;Lunxiang Li;Zhenglei Yu;Pengwei Sha;Qing Cao;Zezhou Xu;Yui;Yunting Guo;Jiashun Si;Jiabao Liu
  • 通讯作者:
    Jiabao Liu
Dramatic decrease of secondary organic aerosol formation potential in Beijing: Important contribution from reduction of coal combustion emission
北京二次有机气溶胶形成潜力大幅下降:燃煤减排的重要贡献
  • DOI:
    10.1016/j.scitotenv.2022.155045
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    9.8
  • 作者:
    Jun Liu;Biwu Chu;Yongcheng Jia;Qing Cao;Hong Zhang;Tianzeng Chen;Qingxin Ma;Jinzhu Ma;Yonghong Wang;Peng Zhang;Hong He
  • 通讯作者:
    Hong He
Individual and combined hepatocytotoxicity of DDT and cadmium in vitro
DDT 和镉的体外单独和联合肝细胞毒性
  • DOI:
    10.1177/07482337211007361
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    1.9
  • 作者:
    Ying;Qing Cao;Ming;Lin Yang;Yi
  • 通讯作者:
    Yi

Qing Cao的其他文献

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{{ truncateString('Qing Cao', 18)}}的其他基金

FuSe: Co-designing Continual-Learning Edge Architectures with Hetero-Integrated Silicon-CMOS and Electrochemical Random-Access Memory
FuSe:利用异质集成硅 CMOS 和电化学随机存取存储器共同设计持续学习边缘架构
  • 批准号:
    2329096
  • 财政年份:
    2023
  • 资助金额:
    $ 70.05万
  • 项目类别:
    Continuing Grant
MRI: Track 1 Acquisition of an Atomic-Layer Deposition System with Remote Plasma Activation of Surface Processes
MRI:轨道 1 采集具有表面过程远程等离子体激活的原子层沉积系统
  • 批准号:
    2320739
  • 财政年份:
    2023
  • 资助金额:
    $ 70.05万
  • 项目类别:
    Standard Grant
GCR: Synthetic Neurocomputers for Cognitive Information Processing
GCR:用于认知信息处理的合成神经计算机
  • 批准号:
    2121003
  • 财政年份:
    2021
  • 资助金额:
    $ 70.05万
  • 项目类别:
    Continuing Grant
High-Performance and CMOS-Compatible Electrochemical Random Access Memory For Neuromorphic Computing
用于神经形态计算的高性能且 CMOS 兼容的电化学随机存取存储器
  • 批准号:
    1950182
  • 财政年份:
    2020
  • 资助金额:
    $ 70.05万
  • 项目类别:
    Standard Grant
Bioinspired Antimicrobial Flexible Polymer Thin Films: Fabrication, Mechanism, and Integration for Multi-Functionality
仿生抗菌柔性聚合物薄膜:多功能的制造、机理和集成
  • 批准号:
    2015292
  • 财政年份:
    2020
  • 资助金额:
    $ 70.05万
  • 项目类别:
    Standard Grant

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Scalable Learning and Optimization: High-dimensional Models and Online Decision-Making Strategies for Big Data Analysis
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