Room temperature high-power terahertz semiconductor laser with high-quality beam shape and stable spectral emission

具有高质量光束形状和稳定光谱发射的室温高功率太赫兹半导体激光器

基本信息

  • 批准号:
    2149908
  • 负责人:
  • 金额:
    $ 45万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2022
  • 资助国家:
    美国
  • 起止时间:
    2022-05-15 至 2025-04-30
  • 项目状态:
    未结题

项目摘要

This project seeks to develop compact and high power THz sources in order to close an important gap in technology between microwave and optical devices. This is a transition area between electronics and optics as well as a transition area between classical mechanics and quantum physics. The specific location of THz waves in the electromagnetic spectrum also gives them a plethora of unique properties. For an example, THz waves can pass through a variety of substances, including synthetics, textiles, paper, and cardboard. Also, many biomolecules, proteins, explosives or narcotics feature characteristic absorption signatures at the frequencies between 1 and 5 THz. Therefore, two major applications of THz radiation are imaging, sensing and spectroscopy. Besides, unlike X-rays, THz waves do not have any ionizing effects and are generally considered biologically innocuous. This makes THz waves much safer and healthier than X-rays when used for security checks and medical diagnosis. In addition, as the THz frequency is orders of magnitude higher than tht used for traditional wireless internet, there is the potential to apply THz technology for the next-generation of high-speed wireless communications. Unfortunately, current commercial sources of THz radiation are either extremely large or require cryogenic cooling, neither of which are desirable traits for widespread use. By integrating quantum device engineering, nonlinear optics, optical phased arrays, and photonic integrated circuit technology, it may now be possible to realize a compact, mass-producible, and room temperature THz source with high output power in continuous operation. This source will represent an enabling technology for all of the applications mentioned above.The proposed THz frequency source is based on difference frequency generation (DFG) in a dual-wavelength quantum cascade laser (QCL) that has been configured as an optical phased array (OPA) for coherent, high power operation. The utility of the OPA is to both manage waste heat and provide near diffraction limited beam quality for THz emission. With proper heat management and packaging, this will be the first room chip-based semiconductor laser with 1 mW CW THz output power at room temperature. This type of THz source inherits all of the advantages of the mid-infrared QCLs, such as room temperature operation, electrical pumping, compact size, stable emission, and the potential for mass production. This multidisciplinary project is a combination of both theory and experiment covering diverse fields, including semiconductor physics, material science, quantum mechanics, optoelectronics, nonlinear optics, thermal management, and micro/nanotechnology. In additional to the practical use of the technology that will be developed, project details also make an excellent case study for integrated device development, which will be explored as part of the Solid State Engineering curriculum at Northwestern University.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该项目旨在开发紧凑和高功率的THz源,以缩小微波和光学器件之间的技术差距。这是电子学和光学之间的过渡领域,也是经典力学和量子物理之间的过渡领域。太赫兹波在电磁频谱中的特定位置也赋予了它们大量独特的属性。例如,太赫兹波可以穿过各种物质,包括合成材料、纺织品、纸张和纸板。此外,许多生物分子、蛋白质、爆炸物或麻醉剂在1和5 THz之间的频率下具有特征吸收特征。因此,太赫兹辐射的两个主要应用是成像、传感和光谱学。此外,与X射线不同,太赫兹波没有任何电离效应,通常被认为对生物无害。这使得太赫兹波在用于安全检查和医疗诊断时比X射线更安全,更健康。此外,由于太赫兹频率比传统无线互联网所使用的频率高出几个数量级,因此有可能将太赫兹技术应用于下一代高速无线通信。不幸的是,目前的商业太赫兹辐射源要么非常大,要么需要低温冷却,这两者都不是广泛使用的理想特征。通过集成量子器件工程、非线性光学、光学相控阵和光子集成电路技术,现在有可能实现一种紧凑、可批量生产的室温THz源,该源具有连续工作的高输出功率。 该源将代表上述所有应用的使能技术。所提出的THz频率源基于双波长量子级联激光器(QCL)中的差频产生(DFG),该激光器已被配置为用于相干、高功率操作的光学相控阵(OPA)。 OPA的效用是既管理废热又为THz发射提供接近衍射极限的光束质量。 通过适当的热管理和包装,这将是第一台在室温下具有1 mW CW THz输出功率的室内芯片半导体激光器。 这种类型的THz源继承了中红外QCL的所有优点,例如室温操作、电泵浦、紧凑的尺寸、稳定的发射以及批量生产的潜力。这个多学科项目是理论和实验的结合,涵盖了不同的领域,包括半导体物理,材料科学,量子力学,光电子学,非线性光学,热管理和微/纳米技术。除了将开发的技术的实际应用外,项目细节也为集成器件开发提供了一个很好的案例研究,这将作为西北大学固态工程课程的一部分进行探索。该奖项反映了NSF的法定使命,并被认为值得通过使用基金会的智力价值和更广泛的影响审查标准进行评估来支持。

项目成果

期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
High power, room temperature, terahertz sources and frequency comb based on difference-frequency generation at CQD
基于 CQD 差频生成的高功率、室温、太赫兹源和频率梳
  • DOI:
    10.1117/12.2635322
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Razeghi, Manijeh
  • 通讯作者:
    Razeghi, Manijeh
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Manijeh Razeghi其他文献

Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices
  • DOI:
    10.1016/j.infrared.2021.103641
  • 发表时间:
    2021-03-01
  • 期刊:
  • 影响因子:
  • 作者:
    Jiakai Li;Arash Dehzangi;Manijeh Razeghi
  • 通讯作者:
    Manijeh Razeghi
Temperature dependence of the quantized Hall effect.
量子霍尔效应的温度依赖性。
  • DOI:
    10.1103/physrevb.32.7016
  • 发表时间:
    1985
  • 期刊:
  • 影响因子:
    0
  • 作者:
    H. Wei;Albert M. Chang;D. C. Tsui;Manijeh Razeghi
  • 通讯作者:
    Manijeh Razeghi
Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation
  • DOI:
    10.1016/s0022-0248(96)00908-6
  • 发表时间:
    1997-04-01
  • 期刊:
  • 影响因子:
  • 作者:
    Tomohisa Kato;Hitoshi Ohsato;Takashi Okuda;Patric Kung;Adam Saxler;Chien-Jen Sun;Manijeh Razeghi
  • 通讯作者:
    Manijeh Razeghi
Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit
中红外表面发射光子集成电路中的单片光束转向
  • DOI:
    10.1038/s41598-017-08916-9
  • 发表时间:
    2017-08-16
  • 期刊:
  • 影响因子:
    3.900
  • 作者:
    Steven Slivken;Donghai Wu;Manijeh Razeghi
  • 通讯作者:
    Manijeh Razeghi
Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice
基于Ⅱ型超晶格的能带结构工程化高增益长波红外光电探测器
  • DOI:
    10.1038/s41377-020-00453-x
  • 发表时间:
    2021-01-14
  • 期刊:
  • 影响因子:
    23.400
  • 作者:
    Arash Dehzangi;Jiakai Li;Manijeh Razeghi
  • 通讯作者:
    Manijeh Razeghi

Manijeh Razeghi的其他文献

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{{ truncateString('Manijeh Razeghi', 18)}}的其他基金

EAGER: MOCVD Growth of beta-(Al,In,Ga)2O3 for Transistor Applications
EAGER:用于晶体管应用的 β-(Al,In,Ga)2O3 的 MOCVD 生长
  • 批准号:
    1748339
  • 财政年份:
    2017
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Diffraction-grating coupled surface emitting Terahertz quantum cascade laser source for high power, room temperature continuous wave operation
用于高功率、室温连续波操作的衍射光栅耦合表面发射太赫兹量子级联激光源
  • 批准号:
    1607838
  • 财政年份:
    2016
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Terahertz source frequency comb based on difference frequency generation from a mid-IR quantum cascade laser
基于中红外量子级联激光器差频生成的太赫兹源频率梳
  • 批准号:
    1505409
  • 财政年份:
    2015
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Tunable Continuous Wave THz Source Based on a Room Temperature Quantum Cascade Laser
基于室温量子级联激光器的可调谐连续波太赫兹源
  • 批准号:
    1306397
  • 财政年份:
    2013
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant
Request for Conference support for the 11th international conference on Infrared Optoelectronics: Materials and Devices (MIOMD-XI),to be Held September,4-8,2012 in Evanston, IL.
请求为将于 2012 年 9 月 4 日至 8 日在伊利诺伊州埃文斯顿举行的第 11 届红外光电子学国际会议:材料与器件 (MIOMD-XI) 提供会议支持。
  • 批准号:
    1225083
  • 财政年份:
    2012
  • 资助金额:
    $ 45万
  • 项目类别:
    Standard Grant

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Graphene-Metal Oxide Gas Sensors for Low Cost and Low Power Selective Room Temperature Gas Sensing (MANGO)
用于低成本和低功耗选择性室温气体传感的石墨烯金属氧化物气体传感器 (MANGO)
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通过表面激活键合方法进行室温 GaN-金刚石集成,用于高功率 GaN 器件
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