EAGER: MOCVD Growth of beta-(Al,In,Ga)2O3 for Transistor Applications

EAGER：用于晶体管应用的 β-(Al,In,Ga)2O3 的 MOCVD 生长

• 批准号: 1748339
• 负责人: Manijeh Razeghi
• 金额: $ 15万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1748339&HistoricalAwards=false
• 关键词: EAGER; MOCVD; Growth; beta; Al

EAGER: MOCVD Growth of a new wide-bandgap oxide semiconductor for Transistor ApplicationsAbstractNontechnical: Ga2O3 is a new wide-bandgap oxide semiconductor material which is anticipated to allow a 10 to 100x improvement in transistor power density over current high performance silicon carbide transistors. The development of Ga2O3 for transistor applications will allow an unprecedented level of performance in applications that require high total continuous-wave power and efficiency. Solidstate lighting and solar energy harvesting are two areas that will directly benefit from the development of this technology. High power density transistors are used to efficiently convert the direct current (DC) voltage generated by solar panels into alternating current (AC) power that can be feed into the existing grid. Similarly, high power density transistors are used to control the DC current used to drive the light emitting diodes using in solid state lighting. There are also applications for very these high power density transistors in the direct current (DC) power transmission lines that join different electrical grids across the globe. In order to achieve these results the proposed fundamental study of (Al,In,Ga)2O3 materials for transistor applications is highly needed. Technical: The objective of this proposal is to study the metal organic chemical vapor deposition growth of â-Ga2O3 and related compounds such as â-(AlxGa1-x)2O3, â-(InxGa1-x)2O3, and â-(AlxInyGa1-x-y)2O3. This group has extensive experience in the growth of III-Nitrides'a similar wide bandgap material system and has recently shown promising results by applying that experience to the growth of Ga2O3. We are proposing to undertake a 2 year comprehensive study of the material growth. In addition to this fundamental study we will also apply the material improvements to the development of transistors based on this material system. The core elements of this project are: (1) development of a fundamental understanding of the metal organic chemical vapor deposition growth of â-(Al,In,Gay)2O3; (2) Demonstrating effective doping of this wide bandgap material; (3) Demonstration of the ability to realize high quality hetero-interfaces; (4) Using the doping and hetero-interface engineering to realize high mobility layers; and, (5) using all of that to demonstrate high performance transistors. The principal investigator's background is extremely well matched to the proposed research, and all the required resources and expertise are available.

用于晶体管的新型宽禁带氧化物半导体的MOCVD生长摘要：Ga2O是一种新的宽禁带氧化物半导体材料，有望使晶体管功率密度比目前的高性能碳化硅晶体管提高10到100倍。用于晶体管应用的Ga2O3的开发将在需要高总连续波功率和效率的应用中实现前所未有的性能水平。固态照明和太阳能收集是这项技术发展将直接受益的两个领域。高功率密度晶体管用于将太阳能电池板产生的直流(DC)电压有效地转换为可馈入现有电网的交流(AC)电力。同样，高功率密度晶体管被用来控制用于驱动固态照明中的发光二极管的直流电流。在连接全球不同电网的直流(DC)输电线路中，也有非常高功率密度晶体管的应用。为了实现这些结果，迫切需要对晶体管应用的(Al，In，Ga)_2O_3材料进行基础研究。技术：本方案的目的是研究金属有机化学气相沉积生长-Ga2O3及其相关化合物，如-(AlxGa1-x)2O3、-(InxGa1-x)2O3和-(AlxInyGa1-x-y)2O3。该小组在III-氮化物的生长方面拥有丰富的经验，这是一种类似的宽禁带材料系统，最近将这些经验应用于Ga2O_3的生长，取得了令人振奋的结果。我们建议对材料生长进行为期两年的全面研究。除了这一基础性研究外，我们还将把材料的改进应用于基于该材料体系的晶体管的开发。该项目的核心内容是：(1)发展对金属有机化学气相沉积生长-(Al，In，GaY)_2O_3的基本了解；(2)展示这种宽禁带材料的有效掺杂；(3)展示实现高质量异质界面的能力；(4)使用掺杂和异质界面工程来实现高迁移率层；以及，(5)利用所有这些来展示高性能晶体管。首席调查员的背景与拟议的研究非常匹配，而且所有必要的资源和专业知识都是可用的。

项目成果

The new oxide paradigm for solid state ultraviolet photodetectors

固态紫外光电探测器的新氧化物范例

• DOI: 10.1117/12.2319505
• 发表时间: 2018
• 期刊: Oxide-based Materials and Devices IX
• 作者: Sandana, Vinod E.;McClintock, Ryan;Razeghi, Manijeh;Harel, Shlomo;Arrateig, X.;Rogers, David J.;Bove, Philippe;Teherani, Ferechteh H.;Frisch, Eran;Teherani, Ferechteh H.
• 通讯作者: Teherani, Ferechteh H.

Imprinting of nanoporosity in lithium-doped nickel oxide through the use of sacrificial zinc oxide nanotemplates

通过使用牺牲氧化锌纳米模板在锂掺杂氧化镍中压印纳米孔隙

• DOI: 10.1117/12.2263713
• 发表时间: 2017
• 期刊: SPIE Proceedings
• 作者: Teherani, Ferechteh H.;Look, David C.;Rogers, David J.;Sandana, Vinod E.;Rogers, David J.;Teherani, Ferechteh H.;Bove, Philippe;McClintock, Ryan;Razeghi, Manijeh
• 通讯作者: Razeghi, Manijeh