Pattern-Directed Growth of Metal Chalcogenide Nanostructures on Surfaces: Composition and Structure Control

金属硫属化物纳米结构在表面上的图案定向生长：成分和结构控制

• 批准号: 2203835
• 负责人: Amy Walker
• 金额: $ 48.01万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-09-01 至 2025-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2203835&HistoricalAwards=false
• 关键词: Pattern; Directed; Growth; Metal; Chalcogenide

With support from the Macromolecular, Supramolecular and Nanochemistry Program (MSN) in the Division of Chemistry, Professor Amy Walker of the University of Texas at Dallas is developing solution-based chemical synthesis methods to prepare semiconductor nanowires and other structures on surfaces. Nanowires have widths measured in nanometers, or millionths of a millimeter. The nanowires in this study are composed either of a single semiconductor material or two different semiconductors one inside the other, commonly called a core-shell structure. Creating electronics and other devices using solution-based synthesis is more environmentally friendly and cheaper than other methods, but it is difficult to precisely place solution-grown nanowires on surfaces to form circuits. Professor Walker and her students are growing semiconductor nanowires in-place with high precision using a new approach: SEmiconductor Nanowire Deposition On Micropatterned Substrates, or SENDOM. In this project fundamental studies will be used to improve and extend SENDOM, and the creation of complex electronic devices using SENDOM will be demonstrated. These advances could lead to improvements and cost reductions in technologies ranging from nanoelectronics to sensing. This, in turn, will have broad and positive societal impact by improving access to information technology, safety, and environmental quality.In this work simple, robust, and scalable strategies for the surface-directed in-place growth of complex metal chalcogenide nanowires and heterostructures are developed. These address key challenges in the integration of complex nanoassemblies in practical devices. In SEmiconductor Nanowire Deposition On Micropatterned Substrates (SENDOM), the controlled growth of nanowires occurs at the interfaces between dissimilar areas of a multifunctional micropatterned substrate immersed in a suitable solution. The resulting nanowires can be centimeters long and can follow complex paths. To date SENDOM has been demonstrated for single semiconductor nanowires. Extensions of SENDOM will be developed and used to grow in situ metal chalcogenide core-shell, mixed-metal and mixed-chalcogenide nanowires. To fully exploit and optimize SENDOM a clear mechanistic understanding is required of how nanowire growth rate and composition are affected by the chemistry of the chalcogenide precursor, metal precursor and complexing agent, as well as their interactions with the patterned surface. This will be addressed by real-time monitoring of the bath chemistry and multi-technique characterization of the deposited materials. Finally, fabrication of nanowire-based field-effect transistors and memories will be demonstrated using SENDOM.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

在化学系大分子、超分子和纳米化学计划(MSN)的支持下，德克萨斯大学达拉斯分校的艾米·沃克教授正在开发基于溶液的化学合成方法，以在表面制备半导体纳米线和其他结构。纳米线的宽度以纳米或百万分之一毫米为单位。这项研究中的纳米线由单一的半导体材料或两种不同的半导体组成，一种在另一种材料中，通常被称为核壳结构。使用基于溶液的合成来制造电子和其他设备比其他方法更环保、更便宜，但很难将溶液生长的纳米线精确地放置在表面上形成电路。沃克教授和她的学生正在使用一种新的方法--在微图案衬底上沉积半导体纳米线，或称SENDOM--原位高精度地生长半导体纳米线。在这个项目中，基础研究将用于改进和扩展SENDOM，并将演示如何使用SENDOM创建复杂的电子设备。这些进展可能导致从纳米电子学到传感的各种技术的改进和成本降低。这反过来将通过改善信息技术的获取、安全和环境质量而产生广泛和积极的社会影响。在这项工作中，开发了表面定向原位生长复杂金属硫化物纳米线和异质结构的简单、健壮和可扩展的策略。这些解决了在实际设备中集成复杂的纳米组件的关键挑战。在微图案化衬底上的半导体纳米线沉积(SENDOM)中，纳米线的可控生长发生在浸泡在合适溶液中的多功能微图案化衬底的不同区域之间的界面上。由此产生的纳米线可以是厘米长的，并且可以沿着复杂的路径。到目前为止，SENDOM已经被证明可以用于单根半导体纳米线。SENDOM的延伸将被开发并用于原位生长金属硫化物核壳、混合金属和混合硫化物纳米线。为了充分开发和优化SENDOM，需要清楚地从机理上了解硫化物前体、金属前体和络合剂的化学成分如何影响纳米线的生长速度和组成，以及它们与图案化表面的相互作用。这将通过实时监测镀液化学和沉积材料的多种技术表征来解决。最后，将使用SENDOM演示基于纳米线的场效应晶体管和存储器的制造。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。