Electrochemical Synthesis of III-V (GaN, InN, GaSb, InSb, AlSb) and Metal Sulfide (ZnS, GaS) Compound Semiconductors and their Nanostructures from Ionic Liquids

离子液体电化学合成 III-V（GaN、InN、GaSb、InSb、AlSb）和金属硫化物（ZnS、GaS）化合物半导体及其纳米结构

• 批准号: 253322406
• 负责人: Privatdozentin Dr. Natalia Borisenko
• 金额: --
• 依托单位: Institut für Elektrochemie
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/253322406?language=en
• 关键词: Electrochemical; Synthesis; III; GaN; InN

This project is intended to develop III-V (GaN, InN, GaSb, InSb and AlSb) and metal sulfide (ZnS and GaS) compound semiconductor thin films and their nanostructures (nanotubes, nanowires and macroporous structures) by electrodeposition / electroless deposition in various ionic liquids near room temperature. The major focus will be to understand the mechanism of formation of these compound semiconductors. The reaction mechanism will be studied based on analysis of the IL-salt mixtures, electrode/electrolyte interface and the resulting deposits. The influence of the IL composition on the deposit morphology and optical properties will be investigated. Furthermore, the semiconductor nanostructures will be made both by template-assisted and template-free electrochemical synthesis that opens up a new way to synthesize semiconductor nanostructures near room temperature.

本项目拟在接近室温的各种离子液体中采用电沉积/化学沉积的方法，制备III-V （GaN、InN、GaSb、InSb和AlSb）和金属硫化物（ZnS和GaS）化合物半导体薄膜及其纳米结构（纳米管、纳米线和大孔结构）。主要的焦点将是了解这些化合物半导体的形成机制。通过对il -盐混合物、电极/电解质界面和生成沉积物的分析，研究反应机理。研究了IL的组成对镀层形貌和光学性能的影响。此外，半导体纳米结构的制备将采用模板辅助和无模板两种电化学合成方法，为室温下合成半导体纳米结构开辟了一条新的途径。