Textured organic ferroelectric-based transistors as neuromorphic devices

作为神经形态器件的纹理化有机铁电晶体管

基本信息

  • 批准号:
    2324839
  • 负责人:
  • 金额:
    $ 41.86万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2023
  • 资助国家:
    美国
  • 起止时间:
    2023-09-01 至 2027-08-31
  • 项目状态:
    未结题

项目摘要

Synapses and neurons are the fundamental information processing units of the human brain. Mimicking the human brain provides a vast platform for the development of energy-efficient neuromorphic computers, which could solve complex problems faster than today’s computers with very low energy consumption. This project supports research and educational activities for developing high performing transistors based on organic semiconductors and applying them in artificial synaptic devices. Organic semiconductors are extremely versatile for absorbing wavelengths from the ultraviolet to the near infrared and combining them with ferroelectric dielectrics in transistor architecture allows for both electrical and photonic synapses to emulate important functions of biological synapses. The project involves both fundamental and applied research by bringing together a team with expertise in device physics, engineering, materials, and biophysics. A broad range of students will be trained during the project, which involves conducting hands-on projects on electronics and nanopore experiments for high school students. A new biophysics experiment will be developed as part of the Advanced Laboratory, where undergraduate students will be exposed to a Nobel Prize winning single-molecule methodology that was instrumental in uncovering activities underlying neuron function. The scientific objective of the project is to develop organic ferroelectric transistor based neuromorphic devices. Combined with polymer ferroelectric dielectrics, organic field-effect transistors (FETs) are promising candidates for both electrical and photonic synapses to emulate important functions of biological synapses. The project takes an integrated approach of developing new architectures for manipulating the ferroelectric phase including the concept of negative capacitance for lowering the subthreshold swing and operating voltage in organic ferroelectric FETs, using novel lithography techniques for patterning and barrier modification of the metal contacts, and investigating both electrical and photonic synapses. Thus far, FET based photonic synapses have mainly relied on oxide semiconductors, which are less versatile in terms of tunable bandgap energies. Along with the range of suitable bandgap energies and effective exciton dissociation mechanisms in organic semiconductors, texture-poled ferroelectric dielectrics in organic FET architectures are promising for increasing the dynamic range for neuromorphic computing. The relaxation characteristics of organic semiconductors may be controlled by the polarization state of the ferroelectric dielectric. Furthermore, the potential of negative capacitance organic FETs opens an exciting avenue for low energy consumption neuromorphic devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
突触和神经元是人脑的基本信息处理单位。模仿人的大脑为能源有效的神经形态计算机的开发提供了一个庞大的平台,这比当今能源消耗非常低的计算机可以更快地解决复杂问题。该项目支持研究和教育活动,以根据有机半导体开发高性能的晶体管并将其应用于人工突触设备。有机半导体非常用途广泛,可吸收从紫外线到近红外的波长,并将它们与晶体管结构中的铁电饮食相结合,从而使电气和光子突触同时模仿生物突触的重要功能。该项目涉及基本研究和应用研究,这是通过在设备物理,工程,材料和生物物理学方面具有专业知识的团队来组合的。在该项目期间,将对广泛的学生进行培训,其中涉及对高中生进行电子和纳米孔实验的动手项目。作为高级实验室的一部分,将开发一项新的生物物理学实验,在该实验室中,本科生将接触到诺贝尔奖获得的单分子方法论,该方法对揭示神经元功能的活动有用。该项目的科学目标是开发基于有机铁电晶体管的神经形态设备。与聚合物铁电饮食学结合,有机场效应晶体管(FET)是电气和光子突触的候选者,以模仿生物突触的重要功能。该项目采用了一种综合方法来开发新的体系结构来操纵铁电阶段,包括使用新颖的光刻技术在有机铁电力FET中降低子阈值摇摆和操作电压的负能力的概念,并使用新颖的光刻技术来进行构图和金属接触的屏障修饰,并研究电气和光电构成。基于FET的光子突触主要依赖于氧化物半导体,在可调的带隙能量方面,它们的用途较少。除了有机半导体中合适的带隙能和有效的刺激机制外,有机FET架构中的质地旋转铁电污染物有望增加神经形态计算的动态范围。有机半导体的松弛特征可以通过铁电饮食的极化状态来控制。此外,负电容有机FET的潜力为低能消耗神经形态设备打开了令人兴奋的途径。该奖项反映了NSF的法定任务,并通过使用该基金会的知识分子的优点和更广泛的影响来审查标准,被视为通过评估来获得支持。

项目成果

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Suchismita Guha其他文献

MAPLE-deposited polymer films for improved organic device performance
枫树沉积聚合物薄膜可改善有机器件性能
  • DOI:
    10.1007/s00339-011-6596-5
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Suchismita Guha;D. Adil;N. Ukah;Ram K. Gupta;K. Ghosh
  • 通讯作者:
    K. Ghosh

Suchismita Guha的其他文献

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{{ truncateString('Suchismita Guha', 18)}}的其他基金

MsRI-EW: Precision Nanoscale Patterning and Characterization – From Cybernetic Proteins to Nanoengineered Quantum Devices
MsRI-EW:精密纳米级图案化和表征 - 从控制论蛋白质到纳米工程量子设备
  • 批准号:
    2034637
  • 财政年份:
    2020
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
Tuning the Spin Texture in Organic-Inorganic Halide Perovskites
调整有机-无机卤化物钙钛矿的自旋纹理
  • 批准号:
    1807263
  • 财政年份:
    2018
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
MRI: Acquisition of an ultrafast amplified laser system for nonlinear optics and time-resolved spectroscopic studies of condensed matter systems
MRI:获取用于非线性光学和凝聚态系统的时间分辨光谱研究的超快放大激光系统
  • 批准号:
    1827846
  • 财政年份:
    2018
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
Carrier dynamics and fast switching by dipole engineering in solution processed thin film transistors
溶液处理薄膜晶体管中偶极子工程的载流子动力学和快速切换
  • 批准号:
    1707588
  • 财政年份:
    2017
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
US-Brazil Workshop on Biosensors: Bioanalytics to Device Integration; November 8-10, 2017; Federal University of ABC, Santo Andre, Sao Paulo, Brazil
美国-巴西生物传感器研讨会:生物分析到设备集成;
  • 批准号:
    1745328
  • 财政年份:
    2017
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
US-Brazil Collaboration: Peptide nanostructure-based organic electronics
美国-巴西合作:基于肽纳米结构的有机电子学
  • 批准号:
    1339011
  • 财政年份:
    2013
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
Polarization induced transport in all-polymer field-effect transistors
全聚合物场效应晶体管中的极化诱导输运
  • 批准号:
    1305642
  • 财政年份:
    2013
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
Light scattering studies of organic field-effect transistors
有机场效应晶体管的光散射研究
  • 批准号:
    0823563
  • 财政年份:
    2008
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
Light Scattering Studies of Organic Semiconductor based Devices
有机半导体器件的光散射研究
  • 批准号:
    0523656
  • 财政年份:
    2005
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant
IMR: Acquisition of a Thin Film Deposition System for Organic/Inorganic Materials Research and Educational Training
IMR:购买用于有机/无机材料研究和教育培训的薄膜沉积系统
  • 批准号:
    0413601
  • 财政年份:
    2004
  • 资助金额:
    $ 41.86万
  • 项目类别:
    Standard Grant

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