Investigation and development of the high-temperature vapour phase epitaxy for producing single-crystalline GaN layers.

用于生产单晶GaN层的高温气相外延的研究和开发。

• 批准号: 257632561
• 负责人: Dr. Olf Pätzold
• 金额: --
• 依托单位: Institut für NE-Metallurgie und Reinststoffe
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/257632561?language=en
• 关键词: Investigation; development; temperature; vapour; phase

The proposal aims at a further development of the High Temperature Vapor Phase Epitaxy (HTVPE) as an efficient and environment-friendly method for a deposition of GaN layers on sapphire substrates. The HTVPE, which is based on the physical vapor transport of gallium, is of increasing interest, because both GaN templates and GaN bulk layers can be produced. The main objectives of the proposal are the investigation and clarification of the GaN defect interaction, the development of methods for a reproducible defect and stress engineering, and the improvement of the stability of the HTVPE process at high deposition rates. Systematic growth experiments and a detailed and comprehensive structural characterization of the GaN layers are planned to achieve the objectives of the proposal. Finally, the following questions have to be answered as a result of the project:1) Is it possible to produce thick GaN bulk layers by HTVPE?2) Is it possible to produce GaN-on-sapphire layers with a sufficient layer quality for the use as templates?This proposal is a revised version of a rejected renewal proposal, where the comments of the reviewers and the recommendations of the DFG are taken into account. The proposal describes a joint project of two institutes of the TU Bergakademie Freiberg. Prospects arise from the expertise of the involved institutes in the fields of growth and characterization of GaN, as well as from the results achieved in the preceding project on the HTVPE of GaN. For instance, first experiments with high growth rates >100µm/h and first studies on the in-situ defect engineering were already performed, demonstrating the feasibility of the proposal.

该提案旨在进一步发展高温气相外延（HTVPE）作为在蓝宝石衬底上沉积GaN层的有效和环保的方法。基于镓的物理气相输运的HTVPE越来越引起人们的兴趣，因为可以生产GaN模板和GaN体层。该提案的主要目标是调查和澄清GaN缺陷相互作用，开发可重复缺陷和应力工程的方法，以及提高高沉积速率下HTVPE工艺的稳定性。系统的生长实验和GaN层的详细和全面的结构表征计划实现该提案的目标。最后，由于该项目的结果，必须回答以下问题：1)是否有可能通过HTVPE生产厚GaN体层？2)是否有可能生产出具有足够层质量的蓝宝石上gan层作为模板？该提案是被拒绝的续期提案的修订版本，其中考虑了审稿人的意见和DFG的建议。该提案描述了弗莱堡工业大学两个研究所的联合项目。前景来自相关研究所在氮化镓生长和表征领域的专业知识，以及之前关于氮化镓HTVPE的项目所取得的成果。例如，已经进行了高生长速率>100µm/h的首次实验和原位缺陷工程的首次研究，证明了该建议的可行性。

项目成果

Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates

• DOI: 10.1063/1.5092284
• 发表时间: 2019-08
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: M. Barchuk;M. Motylenko;T. Schneider;M. Förste;C. Röder;A. Davydok;S. Lazarev;C. Schimpf;C. Wüstefeld;O. Pätzold;D. Rafaja

Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layers

高温气相外延生长GaN层的最新进展 Ⅻ 成核层的受控聚结

• DOI: 10.1016/j.jcrysgro.2019.125465
• 发表时间: 2020
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: T. Schneider;M. Förste;G. Lukin;P. Fischer;M. Barchuk;C. Schimpf;E. Niederschlag;O. Pätzold;D. Rafaja;M. Stelter
• 通讯作者: M. Stelter

X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks

• DOI: 10.1016/j.tsf.2021.138777
• 发表时间: 2021-06
• 期刊: Thin Solid Films
• 影响因子: 2.1
• 作者: D. Rafaja;P. Fischer;M. Barchuk;M. Motylenko;C. Röder;S. Besendörfer;E. Meissner

Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy

• DOI: 10.1016/j.jcrysgro.2019.125185
• 发表时间: 2019-10-15
• 期刊: JOURNAL OF CRYSTAL GROWTH
• 影响因子: 1.8
• 作者: Lukin, G.;Schneider, T.;Stelter, M.
• 通讯作者: Stelter, M.