Investigation and development of the high-temperature vapour phase epitaxy for producing single-crystalline GaN layers.

该提案旨在进一步发展高温气相外延（HTVPE）作为在蓝宝石衬底上沉积GaN层的有效且环境友好的方法。基于镓的物理气相传输的HTVPE越来越受到关注，因为可以生产GaN模板和GaN体层。该提案的主要目标是调查和澄清GaN缺陷相互作用，开发可再现缺陷和应力工程的方法，以及提高HTVPE工艺在高沉积速率下的稳定性。计划进行系统的生长实验和详细全面的GaN层结构表征，以实现该提案的目标。最后，作为项目的结果，必须回答以下问题：1） 用HTVPE能制备厚GaN体层吗？（二） 是否有可能生产具有足够层质量的蓝宝石GaN层用作模板？本提案是被拒绝的更新提案的修订版，其中考虑了评审员的意见和DFG的建议。该提案描述了TU Bergakademie弗赖贝格的两个研究所的联合项目。前景来自GaN生长和表征领域相关机构的专业知识，以及在GaN HTVPE项目中取得的成果。例如，已经进行了第一次高生长速率> 100 μm/h的实验和第一次原位缺陷工程研究，证明了该提案的可行性。

The proposal aims at a further development of the High Temperature Vapor Phase Epitaxy (HTVPE) as an efficient and environment-friendly method for a deposition of GaN layers on sapphire substrates. The HTVPE, which is based on the physical vapor transport of gallium, is of increasing interest, because both GaN templates and GaN bulk layers can be produced. The main objectives of the proposal are the investigation and clarification of the GaN defect interaction, the development of methods for a reproducible defect and stress engineering, and the improvement of the stability of the HTVPE process at high deposition rates. Systematic growth experiments and a detailed and comprehensive structural characterization of the GaN layers are planned to achieve the objectives of the proposal. Finally, the following questions have to be answered as a result of the project:1) Is it possible to produce thick GaN bulk layers by HTVPE?2) Is it possible to produce GaN-on-sapphire layers with a sufficient layer quality for the use as templates?This proposal is a revised version of a rejected renewal proposal, where the comments of the reviewers and the recommendations of the DFG are taken into account. The proposal describes a joint project of two institutes of the TU Bergakademie Freiberg. Prospects arise from the expertise of the involved institutes in the fields of growth and characterization of GaN, as well as from the results achieved in the preceding project on the HTVPE of GaN. For instance, first experiments with high growth rates >100µm/h and first studies on the in-situ defect engineering were already performed, demonstrating the feasibility of the proposal.