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Conference: International Workshop on Nitride Semiconductors 2024

Conference: International Workshop on Nitride Semiconductors 2024
会议:2024 年氮化物半导体国际研讨会
批准号:
2421101
负责人:
Ramon Collazo
金额:
$3.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2024
资助国家:
美国
项目状态:
未结题
起止时间:
2024-03-01 至 2025-02-28

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中文摘要
翻译
技术:氮化物半导体国际研讨会(IWN)是一项著名的两年一度的学术会议,具有24年的丰富历史。IWN专注于III-Nitrides半导体的尖端研究,是一个全球平台,汇集了来自世界各地的近1000名专家、研究人员、教职员工和学生。2024年,IWN将在夏威夷火奴鲁鲁举行(11月3-8日),有望成为该领域的一个重要里程碑。这次会议将汇集近1000名来自学术界、产业界和政府的参与者,分享他们在各自III-Nitrides研究方面的最新成果。所有这些参与者来自世界各地,讨论该领域的最新进展,同时通过向社区介绍学生和新科学家来丰富社区。非技术:2024年氮化物半导体国际研讨会(IWN)对美国和全球半导体社区具有巨大的意义。IWN会议是创新、合作和包容的灯塔。IWN会议与NSF关于资助微电子和半导体工程研究机会的努力是一致的,特别是在宽带隙和超宽带隙半导体器件和电路领域。这笔资金将用于支付学生注册的部分费用,并将为初级教师或学生提供5个奖学金,以完全覆盖他们从EPSCoR合格司法管辖区注册的费用。该奖项反映了NSF的法定使命,并已通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Technical:The International Workshop on Nitride Semiconductors (IWN) is a renowned biennial academicconference with a rich history spanning 24 years. Focusing on cutting-edge research in III-Nitrides semiconductors, IWN is a global platform that brings together almost 1,000 experts, researchers, faculty, and students from around the world. In 2024, IWN is set to take place in Honolulu, Hawai'i, (November 3-8) promising to be a significant milestone in the field.This conference will bring together almost 1,000 participants from academy, industry, andgovernment to share their recent results in their respective III-Nitrides research. All theseparticipants come from around the world to discuss the latest progress in the area while enriching the community by introducing students and new scientists to the community.Non-Technical:The International Workshop on Nitride Semiconductors (IWN) 2024 holds immense significancefor the United States and the global semiconductor community. It serves as a beacon of innovation, collaboration, and inclusivity.The IWN conference is consistent with NSF efforts on funding opportunities for engineering research in microelectronics and semiconductors, specifically in the fields of Wide-bandgap and ultrawide- bandgap semiconductor devices and circuits. The funds will be used to partially cover student registrations and will provide 5 fellowships for junior faculty or students to fully cover their registrations from EPSCoR eligible jurisdictions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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会议论文
Advanced doping techniques for AlGaN-based power devices
  • 批准号:
    1916800
  • 项目类别:
    Standard Grant
  • 资助金额:
    $43.5万
  • 财政年份:
    2019
  • 负责人:
    Ramon Collazo
  • 依托单位:
CAREER: Engineering point defect formation in UWBG-based optoelectronic devices
  • 批准号:
    1653383
  • 项目类别:
    Standard Grant
  • 资助金额:
    $50.0万
  • 财政年份:
    2017
  • 负责人:
    Ramon Collazo
  • 依托单位:
A pathway to controllable n-type doping in AlGaN alloys for high power devices
  • 批准号:
    1508854
  • 项目类别:
    Standard Grant
  • 资助金额:
    $33.0万
  • 财政年份:
    2015
  • 负责人:
    Ramon Collazo
  • 依托单位:
Materials World Network: Quasi-Phase Matching in Non-Centrosymmetric Wide Band Gap Semiconductors.
  • 批准号:
    1312582
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $37.5万
  • 财政年份:
    2013
  • 负责人:
    Ramon Collazo
  • 依托单位:
海外基金