Conference: International Workshop on Nitride Semiconductors 2024

会议：2024 年氮化物半导体国际研讨会

• 批准号: 2421101
• 负责人: Ramon Collazo
• 金额: $ 3万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2024
• 资助国家: 美国
• 起止时间: 2024-03-01 至 2025-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2421101&HistoricalAwards=false
• 关键词: Conference; International; Workshop; Nitride; Semiconductors

Technical:The International Workshop on Nitride Semiconductors (IWN) is a renowned biennial academicconference with a rich history spanning 24 years. Focusing on cutting-edge research in III-Nitrides semiconductors, IWN is a global platform that brings together almost 1,000 experts, researchers, faculty, and students from around the world. In 2024, IWN is set to take place in Honolulu, Hawai'i, (November 3-8) promising to be a significant milestone in the field.This conference will bring together almost 1,000 participants from academy, industry, andgovernment to share their recent results in their respective III-Nitrides research. All theseparticipants come from around the world to discuss the latest progress in the area while enriching the community by introducing students and new scientists to the community.Non-Technical:The International Workshop on Nitride Semiconductors (IWN) 2024 holds immense significancefor the United States and the global semiconductor community. It serves as a beacon of innovation, collaboration, and inclusivity.The IWN conference is consistent with NSF efforts on funding opportunities for engineering research in microelectronics and semiconductors, specifically in the fields of Wide-bandgap and ultrawide- bandgap semiconductor devices and circuits. The funds will be used to partially cover student registrations and will provide 5 fellowships for junior faculty or students to fully cover their registrations from EPSCoR eligible jurisdictions.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

技术：氮化物半导体（IWN）的国际研讨会是著名的双年展学术会议，历史悠久24年。 IWN专注于III-硝酸盐半导体的尖端研究，是一个全球平台，汇集了来自世界各地的近1,000名专家，研究人员，教职员工和学生。 2024年，IWN将于11月3日至8日在夏威夷檀香山举行，承诺成为该领域的重要里程碑。这次会议将使近1,000名来自学院，工业界的参与者聚集在一起，并分享他们在各自的III-Nitrides研究中的最新成果。所有这些eSepartipant来自世界各地，讨论该地区的最新进展，同时通过向社区介绍学生和新科学家来丰富社区。Non-Technical：Nitride Simiconductors（IWN）2024年的国际硝酸盐研讨会（IWN）2024年对美国和全球半径社区具有巨大的意义。它充当创新，协作和包容性的灯塔。IWN会议与NSF在微型电子学和半导体方面的工程研究机会方面的努力一致，特别是在宽带和超级型频道频道的范围内 - 频段gapap半导体设备和电路。这些资金将用于部分涵盖学生的注册，并将为初级教师或学生提供5个奖学金，以完全涵盖其从EPSCOR符合条件的管辖权中的注册。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的智力和更广泛影响的评估来通过评估来获得支持的。