Advanced doping techniques for AlGaN-based power devices

用于 AlGaN 功率器件的先进掺杂技术

• 批准号: 1916800
• 负责人: Ramon Collazo
• 金额: $ 43.5万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-08-01 至 2023-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1916800&HistoricalAwards=false
• 关键词: Advanced; doping; techniques; AlGaN; based

Nontechnical:Power semiconductor devices are critical for the energy infrastructure. By 2030, as much as 80% of generated electricity will pass through at least one power conversion stage before use. Maximizing the energy efficiency of devices that perform power conversion is therefore of utmost importance. Power switches based on nitrides of Group III elements will be the building blocks of future power grids. While power diodes based on III-nitrides have been developed, research for the next generation of power diodes and switches needs to be initiated. A potential material candidate for the next generation is the ultrawide bandgap aluminum nitride (AlN) and Al-rich aluminum gallium nitride (AlGaN). This project will establish the fundamentals for controlling the electronic properties of III-nitrides by dopant engineering. This provides a robust toolbox for the design of devices based on basic semiconductor processing, but with the understanding that processes need to be tailored to the targeted applications. Doping advances will lead to reliable devices capable of switching unprecedented power densities and operating at temperatures beyond traditional limits. The ultimate impact of this project will be to preserve and extend natural resources by allowing for the efficient use and transmission of electrical energy. This project could also enable the development of ultraviolet LEDs and lasers.Technical:The proposed study will establish advanced doping capabilities in n-type Al-rich AlGaN to realize a doping toolbox as the first step towards the realization of a novel power Schottky diode or HEMT device structure. The program is based on the hypothesis that AlGaN and potentially even AlN can be n-doped with technologically relevant free carrier concentrations to realize the potential expected from such power switches. Based on this hypothesis, the ultimate technical goal is to demonstrate controllable n-type doping in AlGaN, thus realizing a practical doping toolbox to allow for the realization of advanced power device structures. The following challenges need to be met: (1) doping of AlGaN with Si in the low doping range (10E16/cm^3) for drift layer applications by controlling the compensator background concentration, (2) controlling the free electron concentration in the high doping range (1E19/cm^3) by identifying and controlling self-compensation, and (3) suppressing DX-center formation by application of non-equilibrium processes such as ion-implantation and quasi defect Fermi level control. In addition, a wider doping range and better compensation control can be achieved by using alternative dopants such as Ge. Our group have been in the forefront of these developments by demonstrating not only novel point defect control schemes but also by demonstrating its capabilities such as the Schottky diode based on AlGaN and deep-UV lasers. The proposed research will develop a unique framework by which to realize the concept of dopant engineering in ultrawide bandgap semiconductors and related electronic materials.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性：功率半导体设备对于能源基础设施至关重要。到2030年，多达80％的发电将在使用前至少通过一个电力转换阶段。因此，最大程度地提高执行功率转换设备的能源效率至关重要。基于III组元素的氮化物的电源开关将是未来电网的基础。尽管已经开发了基于III-硝酸盐的功率二极管，但需要启动针对下一代功率二极管和开关的研究。下一代的潜在材料是氮化铝（ALN）和富含Al的氮化铝（Algan）。该项目将建立通过掺杂剂工程控制III-硝化物的电子特性的基本原理。这为基于基本半导体处理的设备设计提供了强大的工具箱，但是要理解，需要根据目标应用程序量身定制过程。兴奋剂的进步将导致可靠的设备能够切换前所未有的功率密度并在传统限制以外的温度下运行。该项目的最终影响是通过有效利用和传输电能来保护和扩展自然资源。该项目还可以使紫外线和激光器的开发。技术：拟议的研究将在N型Al-Rich Algan中建立先进的掺杂能力，以实现掺杂工具箱，作为实现新型功率Schottky Diode或Hemt设备结构的第一步。该计划基于以下假设：Algan和可能的ALN都可以通过技术相关的自由载体浓度来n掺杂，以实现此类功率开关所期望的潜力。基于这一假设，最终的技术目标是展示Algan中可控的N型掺杂，从而实现了实用的掺杂工具箱，以实现高级动力设备结构。需要满足以下挑战：（1）通过控制补偿器背景浓度来控制漂移层的应用，在低掺杂范围（10E16/cm^3）中掺杂Algan，（（2）通过识别和控制non-contress和（3）ddx-cimpens和（3）ddcipress的浓度（2）控制自由电子浓度（1E19/cm^3）离子 - 植入和准缺陷FERMI水平控制等过程。另外，通过使用替代掺杂剂（例如GE），可以实现更广泛的掺杂范围和更好的补偿控制。我们的小组不仅通过展示新的点缺陷控制方案，而且还通过证明其能力（例如基于Algan和Deep-UV激光器）的能力来表现出这些发展的最前沿。拟议的研究将开发一个独特的框架，通过该框架，在超速带隙半导体和相关电子材料中实现掺杂工程的概念。该奖项反映了NSF的法定任务，并被认为值得通过基金会的知识分子优点和更广泛的影响审查标准通过评估来进行评估。

项目成果

Recovery kinetics in high temperature annealed AlN heteroepitaxial films

• DOI: 10.1063/5.0002891
• 发表时间: 2020-03
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: S. Washiyama;Y. Guan;S. Mita;R. Collazo;Z. Sitar

High p-conductivity in AlGaN enabled by polarization field engineering

• DOI: 10.1063/5.0143427
• 发表时间: 2023-04
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. Rathkanthiwar;P. Reddy;B. Moody;Cristyan Quiñones-García;P. Bagheri;D. Khachariya;R. Dalmau

Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control

• DOI: 10.1088/1361-6641/ac3638
• 发表时间: 2022-01-01
• 期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• 影响因子: 1.9
• 作者: Szymanski，Dennis;Wang，Ke;Collazo，Ramon
• 通讯作者: Collazo，Ramon

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

• DOI: 10.1063/5.0038628
• 发表时间: 2021-01-11
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Breckenridge, M. Hayden;Tweedie, James;Sitar, Zlatko
• 通讯作者: Sitar, Zlatko

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

通过非平衡工艺实现 Ge 掺杂 AlN 的高电导率

• DOI: 10.1063/5.0146439
• 发表时间: 2023
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Bagheri, Pegah;Quiñones-Garcia, Cristyan;Khachariya, Dolar;Loveless, James;Guan, Yan;Rathkanthiwar, Shashwat;Reddy, Pramod;Kirste, Ronny;Mita, Seiji;Tweedie, James
• 通讯作者: Tweedie, James