Materials World Network: Quasi-Phase Matching in Non-Centrosymmetric Wide Band Gap Semiconductors.
材料世界网络:非中心对称宽带隙半导体中的准相位匹配。
基本信息
- 批准号:1312582
- 负责人:
- 金额:$ 37.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2013
- 资助国家:美国
- 起止时间:2013-08-15 至 2017-01-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
TECHNICAL SUMMARY: With support from the Division of Materials Research, a collaboration between the Wide-Bandgaps group at North Carolina State University (NCSU) and the Quantum Optics group at the University of Ljubljana, Slovenia, has been established to explore the feasibility of using non-centrosymmetric wide bandgap semiconductors as nonlinear optical materials. In this work, AlGaN (aluminum gallium nitride) will serve as a model material for the investigation of the applicability of this semiconductor class as the high-quality quasi phase-matched structures for second harmonic generation (SHG). As a wide bandgap semiconductor, this will allow for SHG to shift the wavelength of available semiconductor lasers to the range of shorter wavelengths, where injection lasers are not available. In principle, it should allow for the frequency doubling of the output of a semiconductor laser with the shortest wavelength in the violet-blue region and produce a compact, coherent deep ultraviolet light source with wavelengths approaching 200 nm. This international collaboration seeks to demonstrate quasi-phase matched structures for SHG based on wide bandgap nitrides and to develop fundamental nonlinear optical concepts for efficient SHG in the UV spectrum that cannot be achieved in other systems. In order to realize this, two main challenges need to be met: (1) the demonstration of periodic lateral polarity control in AlGaN alloys, and (2) the development of the basic understanding of nonlinear optical characteristics of these structures. The group at NCSU addresses the first challenge, where their expertise in growth and control of polarity in III-nitrides has been demonstrated. The Quantum Optics group at the University of Ljubljana addresses the second challenge with their unique capabilities and expertise in harnessing non-linear optical properties of different materials. The periodic AlGaN structures are grown and fabricated using metalorganic chemical vapor deposition, with the choice of alloy composition and structure geometry based on the optical research by the group at Ljubljana. NON-TECHNICAL SUMMARY: Nonlinear optical devices based on the aluminum gallium nitride semiconductors can provide a broad-based vehicle for laser light generation in the deep ultraviolet region of the electromagnetic spectrum, which is not accessible by any other solid-state technology. This can find uses in health care, bio-defense and other commercial and defense applications. The use of light sources in the deep UV will lead to detection systems of different chemical and biological aerosols, providing for detection of a variety of pollutant agents among other effluents. In general, this research will lead to materials that will be used for applications that deal with the preservation and extension of natural resources by: (1) allowing for the efficient use and transmission of electrical energy, (2) availability of clean potable water through disinfection by the use of UV light emitting diodes, and (3) emissions and other effluents detection. In addition, this challenging project will provide the opportunity to establish a research collaboration and student exchange between North Carolina State University and the University of Ljubljana. This opportunity will also help expose the students and researchers to state of the art facilities within NCSU and the University of Ljubljana for realizing this research, while at the same time building an international network for establishing future careers.
技术概要:在材料研究部的支持下,北卡罗来纳州州立大学(NCSU)的宽带隙小组和斯洛文尼亚卢布尔雅那大学的量子光学小组之间的合作已经建立,以探索使用非中心对称宽带隙半导体作为非线性光学材料的可行性。在这项工作中,AlGaN(氮化铝镓)将作为一个模型材料的适用性的调查,这种半导体类作为高品质的准相位匹配结构的二次谐波产生(SHG)。作为宽带隙半导体,这将允许SHG将可用半导体激光器的波长偏移到注入激光器不可用的较短波长范围。原则上,它应该允许在紫-蓝区域中具有最短波长的半导体激光器的输出的倍频,并产生波长接近200 nm的紧凑、相干的深紫外光源。这项国际合作旨在展示基于宽带隙氮化物的SHG准相位匹配结构,并开发在其他系统中无法实现的UV光谱中高效SHG的基本非线性光学概念。为了实现这一点,需要满足两个主要挑战:(1)在AlGaN合金中周期性横向极性控制的演示,以及(2)对这些结构的非线性光学特性的基本理解的发展。NCSU的小组解决了第一个挑战,他们在III族氮化物的生长和极性控制方面的专业知识得到了证明。卢布尔雅那大学的量子光学小组以其独特的能力和利用不同材料的非线性光学特性的专业知识解决了第二个挑战。周期性AlGaN结构的生长和制造使用金属有机化学气相沉积,与合金成分和结构的几何形状的选择的基础上的光学研究小组在卢布尔雅那。非技术性总结:基于氮化铝镓半导体的非线性光学器件可以为电磁光谱的深紫外区域中的激光产生提供广泛的载体,这是任何其他固态技术所无法实现的。这可以在医疗保健,生物防御和其他商业和国防应用中找到用途。在深紫外线中使用光源将导致不同的化学和生物气溶胶的检测系统,提供了在其他流出物中检测各种污染剂。总的来说,这项研究将导致材料将用于处理自然资源的保护和扩展的应用:(1)允许电能的有效使用和传输,(2)通过使用紫外线发光二极管消毒清洁饮用水的可用性,以及(3)排放和其他流出物检测。此外,这个具有挑战性的项目将提供机会,建立一个研究合作和学生交流之间的北卡罗来纳州州立大学和卢布尔雅那大学。这个机会也将有助于学生和研究人员接触NCSU和卢布尔雅那大学的最先进的设施,以实现这项研究,同时建立一个国际网络,以建立未来的职业生涯。
项目成果
期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Design Challenges for Mid-UV Laser Diodes
- DOI:10.1109/rapid.2018.8508945
- 发表时间:2018-08
- 期刊:
- 影响因子:0
- 作者:Q. Guo;R. Kirste;P. Reddy;S. Mita;R. Collazo;Z. Sitar
- 通讯作者:Q. Guo;R. Kirste;P. Reddy;S. Mita;R. Collazo;Z. Sitar
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN
- DOI:10.1063/1.5002682
- 发表时间:2017-12-28
- 期刊:
- 影响因子:3.2
- 作者:Reddy, Pramod;Washiyama, Shun;Sitar, Zlatko
- 通讯作者:Sitar, Zlatko
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Ramon Collazo其他文献
(チオフェン/フェニレン)コオリゴマーを用いた有機半導体レーザー共振器の作製と評価
使用(噻吩/亚苯基)低聚物的有机半导体激光谐振器的制作和评估
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
田中凌平;東城俊介;額賀俊成;富樫理恵;永島徹;木下亨;Baxter Moody;村上尚;Ramon Collazo;熊谷義直;纐纈明伯;Zlatko Sitar;佐々木史雄 - 通讯作者:
佐々木史雄
Gallium oxide related materials as novel wide-band-gap semiconductor
氧化镓相关材料作为新型宽带隙半导体
- DOI:
- 发表时间:
2013 - 期刊:
- 影响因子:0
- 作者:
Toru Nagashima;Yuki Kubota;Toru Kinoshita;Yoshinao Kumagai;Jinqiao Xie;Ramon Collazo;Hisashi Murakami;Hiroshi Okamoto;Akinori Koukitu;Zlatko Sitar;Takayoshi Oshima - 通讯作者:
Takayoshi Oshima
Influence of ambient oxygen on Si incorporation during hydride vapor phase epitaxy of AlN at high temperature
环境氧气对AlN高温氢化物气相外延过程中Si掺入的影响
- DOI:
- 发表时间:
2017 - 期刊:
- 影响因子:0
- 作者:
Keita Konishi;Reo Yamamoto;Rie Togashi;Toru Nagashima;Rafael Dalmau;Raoul Schlesser;Hisashi Murakami;Ramon Collazo;Bo Monemar;Zlatko Sitar;and Yoshinao Kumagai - 通讯作者:
and Yoshinao Kumagai
Defect selective etching of MOVPE grown AlN and HVPE grown bulk AlN substrates in a molten KOH/NaOH eutectic
在熔融 KOH/NaOH 共晶中对 MOVPE 生长的 AlN 和 HVPE 生长的块状 AlN 衬底进行缺陷选择性蚀刻
- DOI:
- 发表时间:
2017 - 期刊:
- 影响因子:0
- 作者:
Mari Higuchi;Taro Mitsui;Toru Nagashima;Reo Yamamoto;Keita Konishi;Galia Pozina;Rafael Dalmau;Raoul Schlesser;Ramon Collazo;Bo Monemar;Zlatko Sitar;and Yoshinao Kumagai - 通讯作者:
and Yoshinao Kumagai
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
- DOI:
10.1557/s43578-021-00443-8 - 发表时间:
2021-12-15 - 期刊:
- 影响因子:2.900
- 作者:
Ronny Kirste;Biplab Sarkar;Pramod Reddy;Qiang Guo;Ramon Collazo;Zlatko Sitar - 通讯作者:
Zlatko Sitar
Ramon Collazo的其他文献
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{{ truncateString('Ramon Collazo', 18)}}的其他基金
Conference: International Workshop on Nitride Semiconductors 2024
会议:2024 年氮化物半导体国际研讨会
- 批准号:
2421101 - 财政年份:2024
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
Advanced doping techniques for AlGaN-based power devices
用于 AlGaN 功率器件的先进掺杂技术
- 批准号:
1916800 - 财政年份:2019
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
CAREER: Engineering point defect formation in UWBG-based optoelectronic devices
职业:基于 UWBG 的光电器件中工程点缺陷的形成
- 批准号:
1653383 - 财政年份:2017
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
A pathway to controllable n-type doping in AlGaN alloys for high power devices
用于高功率器件的 AlGaN 合金中可控 n 型掺杂的途径
- 批准号:
1508854 - 财政年份:2015
- 资助金额:
$ 37.5万 - 项目类别:
Standard Grant
相似国自然基金
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- 批准号:81942001
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- 资助金额:10 万元
- 项目类别:专项基金项目
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