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Modellierung und Simulation memristiver Bauelemente und Systeme

Modellierung und Simulation memristiver Bauelemente und Systeme
忆阻元件和系统的建模和仿真
批准号:
261986866
负责人:
Professor Dr.-Ing. Thomas Mussenbrock
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Units
财政年份:
2014
资助国家:
德国
项目状态:
已结题
起止时间:
2013-12-31 至 2018-12-31

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中文摘要
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英文摘要
The project is devoted to the holistic modeling and simulation of memristive devices and systems. The addressed scientific questions span from the physics of real devices to the dynamics of memristive lumped circuits. Two groups of models which are treated disjunctly so far are identified, i.e., models with distributed parameters and models with concentrated parameters. The first groupdescribes both the spatial and temporal dynamics of the underlying physical transport mechanisms. The second group is limited to the temporal dynamics but is able to describe not only single devices but also more complex systems of devices. The goal of the project is to model and simulate neural systems based on memristive circuits. In order to realize such systems by means ofelectric circuits, it is crucial not only to understand the dynamics of memristive lumped circuits but also to understand the physical mechanisms on the atomic scale. Therefore, the project is divided into two subprojects. Whereas subproject 1 deals with the physics of memristive devices based on models with distributed parameters, subproject 2 investigates the interaction of memristivedevices with other lumped circuit elements. Complementarity of the two subprojects becomes manifest in the fact that the parameters of the model with concentrated parameters are calculated by spatial integration of the results from the physical models with distributed parameters.
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Wafer-level sensor structure for measurements of the ion energy distribution function and the ion angle distribution function in low-pressure plasmas
  • 批准号:
    335529250
  • 项目类别:
    Research Grants
  • 资助金额:
    $0.0万
  • 财政年份:
    2017
  • 负责人:
    Professor Dr.-Ing. Thomas Mussenbrock
  • 依托单位:
Modeling and simulation of memristive devices and systems
Numerical simulation of microplasma jets and their interaction with surfaces
CMOS-compatible RRAM-based structures for the implementation of Physical Unclonable Functions (PUF) and True Random Number Generators (TRNG)
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