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Modellierung und Simulation memristiver Bauelemente und Systeme

Modellierung und Simulation memristiver Bauelemente und Systeme
忆阻元件和系统的建模和仿真
批准号:
261986866
负责人:
Professor Dr.-Ing. Thomas Mussenbrock
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Units
财政年份:
2014
资助国家:
德国
项目状态:
已结题
起止时间:
2013-12-31 至 2018-12-31

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中文摘要
翻译
该项目致力于记忆器件和系统的整体建模和仿真。所涉及的科学问题从真实设备的物理学到记忆集总电路的动力学。识别了目前被分离处理的两组模型,即分布参数模型和集中参数模型。第一类描述了底层物理传输机制的空间和时间动力学。第二组仅限于时间动力学,但不仅能够描述单个设备,而且能够描述更复杂的设备系统。该项目的目标是对基于记忆电路的神经系统进行建模和仿真。为了用电路实现这类系统,不仅要了解记忆集总电路的动力学,而且要了解原子尺度上的物理机制。因此,该项目分为两个子项目。子项目1处理基于分布参数模型的记忆器件的物理,而子项目2研究记忆器件与其他集总电路元件的相互作用。这两个次级项目的互补性很明显,因为具有集中参数的模型的参数是通过对具有分布参数的物理模型的结果进行空间积分来计算的。
英文摘要
The project is devoted to the holistic modeling and simulation of memristive devices and systems. The addressed scientific questions span from the physics of real devices to the dynamics of memristive lumped circuits. Two groups of models which are treated disjunctly so far are identified, i.e., models with distributed parameters and models with concentrated parameters. The first groupdescribes both the spatial and temporal dynamics of the underlying physical transport mechanisms. The second group is limited to the temporal dynamics but is able to describe not only single devices but also more complex systems of devices. The goal of the project is to model and simulate neural systems based on memristive circuits. In order to realize such systems by means ofelectric circuits, it is crucial not only to understand the dynamics of memristive lumped circuits but also to understand the physical mechanisms on the atomic scale. Therefore, the project is divided into two subprojects. Whereas subproject 1 deals with the physics of memristive devices based on models with distributed parameters, subproject 2 investigates the interaction of memristivedevices with other lumped circuit elements. Complementarity of the two subprojects becomes manifest in the fact that the parameters of the model with concentrated parameters are calculated by spatial integration of the results from the physical models with distributed parameters.
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Wafer-level sensor structure for measurements of the ion energy distribution function and the ion angle distribution function in low-pressure plasmas
  • 批准号:
    335529250
  • 项目类别:
    Research Grants
  • 资助金额:
    $0.0万
  • 财政年份:
    2017
  • 负责人:
    Professor Dr.-Ing. Thomas Mussenbrock
  • 依托单位:
Modeling and simulation of memristive devices and systems
Numerical simulation of microplasma jets and their interaction with surfaces
CMOS-compatible RRAM-based structures for the implementation of Physical Unclonable Functions (PUF) and True Random Number Generators (TRNG)
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