Selective Passivation of Electrical Defects in Metal Oxides

金属氧化物中电缺陷的选择性钝化

• 批准号: 288812048
• 负责人: Professor Dr. Gerd-Volker Röschenthaler
• 金额: --
• 依托单位: Department of Physics and Earth Sciences
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/288812048?language=en
• 关键词: Selective; Passivation; Electrical; Defects; Metal

In 1962 the first solid state metal oxide gas-sensor was reported. Since then metal oxides gained high importance in the fields of sensors due to their excellent chemo-resistive properties. Since 2004 another fast developing field of application for metal oxides was promoted by Hosono who fabricated the first metal oxide based thin-film transistor (TFT). High mobility even in amorphous and nano-crystalline films, transparency in the visible range and solution processability by cheap deposition technology make the class of material highly interesting for innovative electronic applications, e.g. for transparent and smart displays. The dynamic surface structure of metal oxides serves as big advantage for sensor and catalysis applications but represents the major drawback of the material as active layer in transistors. Logic circuits require high stability and reliability even under long term operation. These criteria turned out to be very challenging in metal oxide transistor application. Especially, a high sensitivity of the electrical devices towards humidity was correlated to the significant instability of device characteristics. The effect becomes even more enhanced by the ultra-thin films and their nanoparticular and amorphous character.Especially in cheap and low temperature processes, which are a prerequisite for wide spread applications, an increased density of impurities is incorporated in the material creating a high number of defect states which act as electrically active sites hampering proper transistor operations. Low temperature (< 200 °C) spray deposited ZnO is possible as a large-area coating process, but exhibits a dramatic performance loss with decreasing temperature. Hence passivation of these active sites is not only necessary to improve device stability significantly but also to reduce the process temperature dramatically while keeping the performance constant. In this project various approaches are followed to selective passivate those defects during and/or after deposition. In this respect, Fluor containing molecules are known for their unique properties, e.g. Teflon towards water. AG Wagner and AG Röschenthaler have already demonstrated exceptional passivation properties offered by specific Fluor containing molecules with respect to metal oxide transistor operations. Focus in this project is to systematically modify functional chemical groups in Fluor containing molecules, which allow to understand their passivation mechanism and to identify superior passivation procedures and strategies for metal oxide transistors.

1962年，报道了第一个固态金属氧化物气体传感器。从那时起，金属氧化物由于其出色的化学耐药性能而在传感器领域中变得非常重要。自2004年以来，霍索诺（Hosono）促进了另一个快速发展的金属氧化物应用领域，后者制造了第一个金属氧化物薄膜晶体管（TFT）。即使在无定形和纳米晶状体膜中，可见范围的透明度以及通过廉价沉积技术的解决方案加工性的透明度也使一类材料类对创新的电子应用非常有趣，例如用于透明和智能显示器。金属氧化物的动态表面结构是传感器和催化剂应用的重要优势，但代表了材料作为晶体管中活性层的主要缺点。逻辑电路即使在长期操作下也需要高稳定性和可靠性。这些标准在金属氧化物晶体管应用中被挑战。特别是，电动器件对湿度的高灵敏度与设备特性的明显不稳定性相关。超薄膜及其纳米骨骼和无定形特征尤其增强了效果。尤其是在廉价和低温过程中，这是广泛扩散应用的先决条件，杂质的密度增加纳入了材料中，从而产生了大量的缺陷状态，这些缺陷状态可作为电气活跃的现场刺激适当的晶体管晶体管运营。低温（<200°C）的喷雾沉积ZnO是一个大区块涂料过程，但表现出急剧的性能损失，温度降低。因此，这些主动位点的钝化不仅需要显着提高设备稳定性，而且要大大降低过程温度，同时保持性能恒定。在此项目中，遵循各种方法来选择性钝化沉积期间和/或之后的缺陷。在这方面，含有荧光的分子以其独特特性而闻名，例如特氟龙朝水。 Ag Wagner和AgRöschenthaler已经证明了含有特定荧光的特定荧光相对于金属氧化物晶体管操作提供的特殊钝化特性。该项目的重点是系统地修改含有分子的荧光的功能化学基团，从而可以理解其钝化机制，并确定金属氧化物晶体管的卓越钝化程序和策略。