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DFG-RSF: Impact of topology on electronic properties of ordered materials

DFG-RSF：拓扑对有序材料电子性能的影响

基本信息

批准号：
310371528
负责人：
Professor Dr. Jeroen van den Brink
金额：
--
依托单位：
Landau Institute for Theoretical Physics
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2016
资助国家：
德国
起止时间：
2015-12-31 至 2018-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/310371528?language=en
关键词：
DFG RSF Impact topology electronic

项目摘要

The problem of novel material engineering is highly topical due to its potential impact on environment, natural resources saving, progress in telecommunications, and life quality, in total. In spite of almost 30 years history of cuprate HTS, the phase diagram and properties of the layered HTS materials are lacking of complete understanding, particularly in the vicinity of the quantum critical point. There are still debated the effects of the spin and orbital fluctuations, spin and charge ordering, many body effects (in the vicinity of the Lifshitz topological transition), and topology of the surface states (flat bands). Clearly, the role of potentially favorable factors for HTS must be clarified for the purposeful searching and engineering novel HTS materials. The current project aims at theoretical development and experimental implementation of the superconductors engineering based on layered materials (both pnictide, and dichalcogenide-based), studying their properties in the vicinity of QCP, clarifying the role of the interplay of magnetic ions ordering, charge ordering and SC pairing. The main idea of the project consists in studying and use of the flat band materials, both topologically trivial, and non-trivial. The former are to result in the enhanced contribution of the many-body condensation energy to the SC gap due to the proximity to the Lifshitz transition, the latter due to the non-trivial topology (Weyl semimetals). The flat band conditions in the topologically non-trivial materials is expected to be tuned using the band engineering methods (hydrostatic pressure, chemical and electric doping). The experimental and theoretical studies will be carried out in several related directions: (A) refining the theory and collecting new experimental data on the properties of Fe-HTS in the vicinity of the topological Lifshitz transition and in the vicinity of the anticipated QCP. (B) Studies of the new superconducting transition metal dichalcogenides, particularly, with topologically nontrivial spectrum. (C) Design, syntheses and studies of the true 3D topological insulator materials as a platform for studying and utilizing topologically protected surface states. The materials and structures will be synthesized by the solid state synthesis technique, growth from melt, by physical vapor transport, and also by the pulsed laser deposition techniques (PLD/MBE). The project includes development of the novel techniques for measurements and material diagnostics, complemental to the ordinary transport and optical methods. The research will be performed by the team consisting of experts in the complementary fields theoretical physics, and experimental chemistry and physicists.

由于新材料工程对环境、自然资源节约、通信进步和生活质量的潜在影响，因此它是一个备受关注的问题。尽管铜高温超导研究已有近30年的历史，但人们对层状高温超导材料的相图和性质，特别是在量子临界点附近，还缺乏完整的认识。自旋和轨道波动、自旋和电荷排序、许多体效应（在Lifshitz拓扑跃迁附近）和表面态拓扑（平带）的影响仍然存在争议。显然，为了有目的地寻找和设计新型高温超导材料，必须明确潜在有利因素对高温超导的作用。本项目旨在基于层状材料（包括镍基和二硫族基）的超导体工程的理论发展和实验实现，研究它们在QCP附近的性质，阐明磁性离子有序、电荷有序和SC配对的相互作用。该项目的主要思想是研究和使用平面带材料，包括拓扑平凡的和非平凡的。前者是由于接近Lifshitz跃迁而导致多体凝聚能对SC间隙的贡献增强，后者是由于非平凡拓扑（Weyl半金属）。利用能带工程方法（静水压力、化学和电掺杂），有望对拓扑非平凡材料中的平坦能带条件进行调谐。实验和理论研究将在几个相关的方向进行：(A)完善理论和收集新的实验数据，研究Fe-HTS在拓扑Lifshitz跃迁附近和预期QCP附近的性质。(B)新的超导过渡金属二硫族化合物的研究，特别是具有拓扑非平凡谱的。(C)设计、合成和研究真正的三维拓扑绝缘子材料，作为研究和利用拓扑保护表面状态的平台。材料和结构将通过固态合成技术、熔体生长、物理蒸汽传输和脉冲激光沉积技术（PLD/MBE）来合成。该项目包括开发用于测量和材料诊断的新技术，作为普通传输和光学方法的补充。该研究将由理论物理、实验化学和物理学家等互补领域的专家组成的团队进行。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Topological Insulator: Surface Localized States

拓扑绝缘体：表面局域态

DOI：
10.1007/s10948-018-4827-0
发表时间：
2019
期刊：
Journal of Superconductivity and Novel Magnetism
影响因子：
1.8
作者：
Yu. N. Ovchinnikov
通讯作者：
Yu. N. Ovchinnikov

Fate of interaction-driven topological insulators under disorder

无序状态下相互作用驱动的拓扑绝缘体的命运

DOI：
10.1103/physrevb.96.201104
发表时间：
2017-10
期刊：
Phys. Rev. B (Rapid Communications)
影响因子：
0
作者：
Jing Wang;Carmine Ortix;Jeroen van den Brink;Dmitry V. Efremov
通讯作者：
Dmitry V. Efremov

Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure

DOI：
10.1103/physrevb.98.155437
发表时间：
2017-12
期刊：
Physical Review B
影响因子：
3.7
作者：
V. Prudkoglyad;E. Olshanetsky;Z. Kvon;V. Pudalov;N. N. Mikhailov-N.;S. A. Dvoretsky
通讯作者：
V. Prudkoglyad;E. Olshanetsky;Z. Kvon;V. Pudalov;N. N. Mikhailov-N.;S. A. Dvoretsky

Topological Lifshitz transitions