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DFG-RSF: Impact of topology on electronic properties of ordered materials

DFG-RSF：拓扑对有序材料电子性能的影响

基本信息

批准号：
310371528
负责人：
Professor Dr. Jeroen van den Brink
金额：
--
依托单位：
Landau Institute for Theoretical Physics
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2016
资助国家：
德国
起止时间：
2015-12-31 至 2018-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/310371528?language=en
关键词：
DFG RSF Impact topology electronic

项目摘要

The problem of novel material engineering is highly topical due to its potential impact on environment, natural resources saving, progress in telecommunications, and life quality, in total. In spite of almost 30 years history of cuprate HTS, the phase diagram and properties of the layered HTS materials are lacking of complete understanding, particularly in the vicinity of the quantum critical point. There are still debated the effects of the spin and orbital fluctuations, spin and charge ordering, many body effects (in the vicinity of the Lifshitz topological transition), and topology of the surface states (flat bands). Clearly, the role of potentially favorable factors for HTS must be clarified for the purposeful searching and engineering novel HTS materials. The current project aims at theoretical development and experimental implementation of the superconductors engineering based on layered materials (both pnictide, and dichalcogenide-based), studying their properties in the vicinity of QCP, clarifying the role of the interplay of magnetic ions ordering, charge ordering and SC pairing. The main idea of the project consists in studying and use of the flat band materials, both topologically trivial, and non-trivial. The former are to result in the enhanced contribution of the many-body condensation energy to the SC gap due to the proximity to the Lifshitz transition, the latter due to the non-trivial topology (Weyl semimetals). The flat band conditions in the topologically non-trivial materials is expected to be tuned using the band engineering methods (hydrostatic pressure, chemical and electric doping). The experimental and theoretical studies will be carried out in several related directions: (A) refining the theory and collecting new experimental data on the properties of Fe-HTS in the vicinity of the topological Lifshitz transition and in the vicinity of the anticipated QCP. (B) Studies of the new superconducting transition metal dichalcogenides, particularly, with topologically nontrivial spectrum. (C) Design, syntheses and studies of the true 3D topological insulator materials as a platform for studying and utilizing topologically protected surface states. The materials and structures will be synthesized by the solid state synthesis technique, growth from melt, by physical vapor transport, and also by the pulsed laser deposition techniques (PLD/MBE). The project includes development of the novel techniques for measurements and material diagnostics, complemental to the ordinary transport and optical methods. The research will be performed by the team consisting of experts in the complementary fields theoretical physics, and experimental chemistry and physicists.

由于新材料工程对环境、自然资源节约、电信进步和生活质量的潜在影响，新材料工程的问题是高度热门的。尽管铜酸盐高温超导材料已有近30年的历史，但对层状高温超导材料的相图和性质，特别是在量子临界点附近的性质缺乏完整的了解。仍然有争论的影响，自旋和轨道的波动，自旋和电荷的顺序，许多身体的影响（在附近的Lifshitz拓扑转变），和拓扑的表面状态（平带）。显然，高温超导的潜在有利因素的作用必须澄清有目的的搜索和工程新的高温超导材料。目前的项目旨在理论开发和实验实施基于层状材料（包括磷属元素化物和二硫属元素化物）的超导体工程，研究它们在QCP附近的性质，澄清磁性离子有序，电荷有序和SC配对的相互作用的作用。该项目的主要思想是研究和使用平带材料，包括拓扑平凡和非平凡。前者是由于接近Lifshitz跃迁而导致多体凝聚能对SC能隙的贡献增强，后者是由于非平凡拓扑结构（Weyl半金属）。拓扑非平凡材料中的平带条件预计将使用能带工程方法（流体静压，化学和电掺杂）进行调谐。实验和理论研究将在几个相关的方向进行：（A）完善理论，并收集新的实验数据，在拓扑Lifshitz转变附近和预期的QCP附近的Fe-HTS的属性。(B)新的超导过渡金属二硫族化合物的研究，特别是拓扑非平凡谱的研究。(C)设计、合成和研究真三维拓扑绝缘体材料，作为研究和利用拓扑保护表面态的平台。材料和结构将通过固态合成技术、熔体生长、物理气相传输以及脉冲激光沉积技术（PLD/MBE）来合成。该项目包括开发测量和材料诊断的新技术，以补充普通的传输和光学方法。该研究将由理论物理学、实验化学和物理学家等互补领域的专家组成的团队进行。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Topological Insulator: Surface Localized States

拓扑绝缘体：表面局域态

DOI：
10.1007/s10948-018-4827-0
发表时间：
2019
期刊：
Journal of Superconductivity and Novel Magnetism
影响因子：
1.8
作者：
Yu. N. Ovchinnikov
通讯作者：
Yu. N. Ovchinnikov

Fate of interaction-driven topological insulators under disorder

无序状态下相互作用驱动的拓扑绝缘体的命运

DOI：
10.1103/physrevb.96.201104
发表时间：
2017-10
期刊：
Phys. Rev. B (Rapid Communications)
影响因子：
0
作者：
Jing Wang;Carmine Ortix;Jeroen van den Brink;Dmitry V. Efremov
通讯作者：
Dmitry V. Efremov

Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure

DOI：
10.1103/physrevb.98.155437
发表时间：
2017-12
期刊：
Physical Review B
影响因子：
3.7
作者：
V. Prudkoglyad;E. Olshanetsky;Z. Kvon;V. Pudalov;N. N. Mikhailov-N.;S. A. Dvoretsky
通讯作者：
V. Prudkoglyad;E. Olshanetsky;Z. Kvon;V. Pudalov;N. N. Mikhailov-N.;S. A. Dvoretsky

Topological Lifshitz transitions