Self-Aligned Short Channel Complementary Field Effect Transistors on Transparent Substrates (SACFETTS)

基于透明衬底上的p型有机和n型ZnO薄膜晶体管，将开发和分析一种具有短沟道性能的先进互补晶体管集成技术。晶体管通道长度的缩小和通过自对准从栅极到漏极/源极触点的寄生电容的减少将缩小延迟时间，并将改善这些场效应管的rf特性。此外，从ZnO到ZnO/SnO2纳米颗粒薄膜的转移以及DNTT或C8-BTBT的应用将使晶体管的载流子迁移率提高到bbb10 cm2/(Vs)范围。这将使电子器件能够以较低的生产成本实现约十分之一兆赫的高频。器件加工的主要要求是：-通过特殊的UV光曝光技术实现栅极结构的自对准-将该技术扩展到亚μ m范围-引入合适的栅极介电层并分析晶体管截止频率-两种晶体管的通用金属化，包括接触电阻分析-由于陷阱和界面状态引起的不稳定影响的补偿-质量和参数分析：标准和自对准晶体管与倒共面和倒交错器件设置的比较-与标准晶体管相比，自对准晶体管的互补逆变器设置。对于进一步的发展，将关注应用层的低温处理和喷墨打印能力

Based on p-type organic and n-type ZnO- thin-film transistors on transparent substrates an advanced complementary transistor integration technique with short channel capability will be developed and analyzed. A shrink in the transistor channel length and a reduction of the parasitic capacitances from the gate to the drain/source contacts by self-alignment will shrink the delay time and will improve the RF-characteristics of these FETs. Additionally a transfer from ZnO to ZnO/SnO2 nanoparticle films and an application of DNTT or C8-BTBT will raise the transistors charge carrier mobilities into the >10 cm2/(Vs) range. This will enable electronics for high frequencies of some tenth of MHz at a low production cost level. Main requests for processing of the devices are: - Self-alignment of the gate structures by special UV light exposure technique - Extension of the technique into the sub-µm range - Introduction of a suitable gate dielectric layer and analysis on the transistors cut-off frequency - A common metallization for both types of transistors including contact resistance analysis - Compensation of instability effects due to traps and interface states - Quality and parameter analysis: Comparison of standard and self-aligned transistors with inverted coplanar and inverted staggered device setups - Complementary inverter setups with self-aligned transistors in comparison to standard transistors For further developments attention will be paid to low temperature processing and ink jet printing capability for the applied layers