Compensating and recombination centers in CdTe and CdSe

宽禁带半导体广泛应用于光电子、探测器和薄膜光伏等领域。这些应用大多受到有害的杂质污染。在这个项目中，我们将专注于CdTe和CdSe的性质。这两种材料中的大多数杂质都比主原子轻；因此，振动模式光谱学最有用的是给出对称性、电荷态、结合能、扩散速率等。该项目通过拉曼散射、傅里叶变换红外吸收和电容光谱研究了CdTe和CdSe中硫、氧、氢和铜的相关缺陷。我们将讨论在CdTe和CdSe晶体生长过程中无意中加入二氧化硫和氢的争议。

Wide band gap semiconductors are now widely used in optoelectronics, as detectors and in thin film photovoltaic. Most of these applications suffer from detrimental impurity contamination. In this project, we will concentrate on the properties of CdTe and CdSe. Most impurities in these two materials are lighter than the host atoms; therefore vibrational mode spectroscopy is most useful to give the symmetry, charge state, binding energy, diffusion rate etc. The project investigates in particular sulfur-, oxygen-, hydrogen, and copper-related defects in CdTe and CdSe by Raman scattering, Fourier transform infrared absorption and capacitance spectroscopy. We will address the controversy concerning the unintentional incorporation of sulfur dioxide and hydrogen in CdTe and CdSe during the process of crystal growth.