Compensating and recombination centers in CdTe and CdSe

CdTe 和 CdSe 的补偿和复合中心

• 批准号: 377782997
• 负责人: Privatdozent Dr. Eduard Lavrov
• 金额: --
• 依托单位: Professur für Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/377782997?language=en
• 关键词: Compensating; recombination; centers; CdTe; CdSe

Wide band gap semiconductors are now widely used in optoelectronics, as detectors and in thin film photovoltaic. Most of these applications suffer from detrimental impurity contamination. In this project, we will concentrate on the properties of CdTe and CdSe. Most impurities in these two materials are lighter than the host atoms; therefore vibrational mode spectroscopy is most useful to give the symmetry, charge state, binding energy, diffusion rate etc. The project investigates in particular sulfur-, oxygen-, hydrogen, and copper-related defects in CdTe and CdSe by Raman scattering, Fourier transform infrared absorption and capacitance spectroscopy. We will address the controversy concerning the unintentional incorporation of sulfur dioxide and hydrogen in CdTe and CdSe during the process of crystal growth.

宽带隙半导体现在广泛用于光电子学，如探测器和薄膜光伏。这些应用中的大多数遭受有害的杂质污染。在这个项目中，我们将集中在碲化镉和硒化镉的性质。这两种材料中的大多数杂质都比宿主原子轻，因此振动模式光谱是最有用的对称性，电荷状态，结合能，扩散率等该项目调查特别是硫，氧，氢，铜相关的缺陷，碲化镉和硒化镉的拉曼散射，傅里叶变换红外吸收和电容光谱。我们将解决有关的争议无意纳入的二氧化硫和氢在碲化镉和硒化镉晶体生长过程中。

项目成果

Substitutional Sulfur in CdSe: Localized Vibrational Modes

• DOI: 10.1002/pssb.202000204
• 发表时间: 2020-07
• 期刊: physica status solidi (b)
• 作者: F. Herklotz;E. Lavrov;V. Melnikov

SO4 in Cadmium Chalcogenides: CdSe versus CdTe

镉硫属化物中的 SO4：CdSe 与 CdTe

• DOI: 10.1002/pssb.202200029
• 发表时间: 2022
• 期刊: physica status solidi (b)
• 作者: F. Herklotz;E. V. Lavrov;V. V. Melnikov
• 通讯作者: V. V. Melnikov

Vibrational Signatures of Substitutional Oxygen in CdTe and CdSe

CdTe 和 CdSe 中替代氧的振动特征

• DOI: 10.1002/pssb.202100203
• 发表时间: 2021
• 期刊: physica status solidi (b)
• 作者: F. Herklotz;S. Tiede;E. V. Lavrov
• 通讯作者: E. V. Lavrov