Hydrogen in tin (di)oxide

(二)氧化锡中的氢

• 批准号: 467412802
• 负责人: Privatdozent Dr. Eduard Lavrov
• 金额: --
• 依托单位: Professur für Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/467412802?language=en
• 关键词: Hydrogen; tin; di; oxide

Tin dioxide (SnO2) is an important semiconductor widely employed in transparent conductor electronics, solar cells, gas sensors, touchscreens, catalysis, and spintronics. SnO2 reveals only n-type conductivity what seriously limits the amount of possible application. Tin oxide (SnO), on the other hand, only recently received a great deal of attention since the discovery of ambipolar doping. Hydrogen in metal oxides including both SnO2 and SnO is ubiquitous and very difficult to remove from the crystal growth environment and post-growth treatment. Controlling the conductivity of tin (di)oxide thus requires careful control of hydrogen exposure during and after growth. At present understanding of hydrogen properties in both SnO2 and especially SnO at the microscopic level is very limited. The proposed project aims at bridging this gap. Spectroscopic methods will be employed to get insight into the structural and electrical properties of hydrogen with an emphasis on interstitial species, hydrogen trapped at the oxygen vacancy, hydrogen molecule, and hydrogen-acceptor complexes such as the Sn vacancy passivated by hydrogen.

二氧化锡（SnO2）是一种重要的半导体材料，广泛应用于透明导体电子、太阳能电池、气体传感器、触摸屏、催化剂和自旋电子学。SnO2仅显示n型导电性，这严重限制了可能的应用量。另一方面，氧化锡（SnO），直到最近才受到极大的关注，因为双极掺杂的发现。包括SnO2和SnO的金属氧化物中的氢是普遍存在的，并且很难从晶体生长环境和生长后处理中去除。因此，控制氧化锡（二氧化锡）的导电性需要在生长期间和之后仔细控制氢暴露。目前，对SnO2，特别是SnO中氢的微观性质的了解非常有限。拟议的项目旨在弥补这一差距。光谱方法将被用来深入了解氢的结构和电学性质，重点是间隙物质，氢被困在氧空位，氢分子和氢受体络合物，如锡空位钝化氢。