Low dimensional H2 gas in semiconductors

半导体中的低维氢气

• 批准号: 106393372
• 负责人: Privatdozent Dr. Eduard Lavrov
• 金额: --
• 依托单位: Professur für Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2009
• 资助国家: 德国
• 起止时间: 2008-12-31 至 2011-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/106393372?language=en
• 关键词: Low; dimensional; H2; gas; semiconductors

In Si, Ge, and GaAs, high concentrations of hydrogen result in extended planar defects called platelets. In semiconductors hydrogenated from a plasma, the dominating structures are those lying in the {111} crystallographic planes. At least two types of the {111} platelets are known to exist in Si and Ge. The one which will be addressed in this project is characterized by a dielectric constant є ≈ 1 and holds a two dimensional gas of molecular hydrogen. The present project is focused on a fundamental aspect of the platelets, the properties of the two dimensional H2 gas trapped within the {111} platelets. Our main interests include phase transitions; H2 nuclear spin-flip; intermolecular interaction; and interaction of H2 with the host atoms.

在Si、Ge和GaAs中，高浓度的氢会导致扩展的平面缺陷，称为片晶。在由等离子体氢化的半导体中，主要结构是那些位于{111}晶面中的结构。已知Si和Ge中存在至少两种类型的{111}片晶。在这个项目中将解决的一个特征是介电常数为1，并持有分子氢的二维气体。本项目的重点是一个基本方面的血小板，二维氢气的性质被困在{111}血小板。我们的主要兴趣包括相变; H2核自旋翻转;分子间相互作用;和H2与宿主原子的相互作用。