Low dimensional H2 gas in semiconductors

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In Si, Ge, and GaAs, high concentrations of hydrogen result in extended planar defects called platelets. In semiconductors hydrogenated from a plasma, the dominating structures are those lying in the {111} crystallographic planes. At least two types of the {111} platelets are known to exist in Si and Ge. The one which will be addressed in this project is characterized by a dielectric constant є ≈ 1 and holds a two dimensional gas of molecular hydrogen. The present project is focused on a fundamental aspect of the platelets, the properties of the two dimensional H2 gas trapped within the {111} platelets. Our main interests include phase transitions; H2 nuclear spin-flip; intermolecular interaction; and interaction of H2 with the host atoms.