Band gap engineering of novel (In,Ga)SbN epitaxial semiconductors for high-performance long-wavelength optoelectronic devices

用于高性能长波长光电器件的新型 (In,Ga)SbN 外延半导体的带隙工程

• 批准号: DP0663161
• 负责人: Dr Qiang Gao
• 金额: $ 22.56万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2006
• 资助国家: 澳大利亚
• 起止时间: 2006-03-01 至 2009-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0663161
• 关键词: Band; gap; engineering; novel; Ga

This proposal is at the forefront of a number of important fields, and therefore the outcomes are expected to be of great interest to a broad spectrum of industry sectors, including national defence, health care, environment and manufacturing. This novel material system could create new high technologies for various infrared devices. The outcomes of this project will position Australian researchers among the pioneering groups in this area and will be beneficial to several major technology-related fields: global warming and associated environmental monitoring, security systems, thermal-imaging systems for night vision, and healthcare with the emphasis on disease diagnosis and treatment.

该提案处于若干重要领域的前沿，因此，预计其成果将引起广泛的工业部门的极大兴趣，包括国防、保健、环境和制造业。这种新型材料体系将为各种红外器件的发展创造新的高技术。该项目的成果将使澳大利亚研究人员成为这一领域的先驱群体，并将有利于几个主要技术相关领域：全球变暖和相关的环境监测，安全系统，夜视热成像系统，以及侧重于疾病诊断和治疗的医疗保健。