Development of innovative storage devices using silicon nanowire arrays
使用硅纳米线阵列开发创新存储设备
基本信息
- 批准号:16K14546
- 负责人:
- 金额:$ 2.41万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Challenging Exploratory Research
- 财政年份:2016
- 资助国家:日本
- 起止时间:2016-04-01 至 2019-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
项目成果
期刊论文数量(27)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Kurokawa Yasuyoshi其他文献
Recent progress in computational material science for growth of nitride semiconductors I
氮化物半导体生长计算材料科学的最新进展 I
- DOI:
- 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
Mochizuki Takeya;Gotoh Kazuhiro;Ohta Akio;Ogura Shohei;Kurokawa Yasuyoshi;Miyazaki Seiichi;Fukutani Katsuyuki;Usami Noritaka;Tomonori Ito - 通讯作者:
Tomonori Ito
Preferred orientation of BaSi 2 thin films fabricated by thermal evaporation
热蒸发制备BaSi 2 薄膜的择优取向
- DOI:
10.7567/jjapcp.5.011202 - 发表时间:
2017 - 期刊:
- 影响因子:0
- 作者:
K. Hara;C. Trinh;Nakagawa Yoshihiko;Kurokawa Yasuyoshi;Arimoto Keisuke;Yamanaka Junji;Nakagawa Kiyokazu;Usami Noritaka - 通讯作者:
Usami Noritaka
Improving Intrinsic Silicon Nanoparticle Film by Press Treatment for use in p?i?n Solar Cells
通过压制处理改善本征硅纳米颗粒薄膜,用于 p?i?n 太阳能电池
- DOI:
10.1109/pvsc.2018.8547319 - 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
Ichihara Eiji;Kato Shinya;Akaishi Ryushiro;Gotoh Kazuhiro;Kurokawa Yasuyoshi;Kishi Naoki;Soga Tetsuo - 通讯作者:
Soga Tetsuo
Fabrication of NV centers-hosted diamond tip via FIB for scanning probe
通过 FIB 制造用于扫描探针的 NV 中心托管金刚石尖端
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:0
- 作者:
Gotoh Kazuhiro;Wilde Markus;Ogura Shohei;Kurokawa Yasuyoshi;Fukutani Katsuyuki;Usami Noritaka;K. Hayashi,R. Wang,K. Nakashita,Y. Kainuma,M. Ito,T. An - 通讯作者:
K. Hayashi,R. Wang,K. Nakashita,Y. Kainuma,M. Ito,T. An
Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
氢等离子体处理对原子层沉积晶体硅TiOx钝化性能的影响
- DOI:
10.1116/1.5134720 - 发表时间:
2020 - 期刊:
- 影响因子:2.9
- 作者:
Miyagawa Shinsuke;Gotoh Kazuhiro;Ogura Shohei;Wilde Markus;Kurokawa Yasuyoshi;Fukutani Katsuyuki;Usami Noritaka - 通讯作者:
Usami Noritaka
Kurokawa Yasuyoshi的其他文献
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{{ truncateString('Kurokawa Yasuyoshi', 18)}}的其他基金
Reduction of defect density in silicon quantum dot light-absorbers using hydrogen plasma treatment
使用氢等离子体处理降低硅量子点光吸收器中的缺陷密度
- 批准号:
20K05075 - 财政年份:2020
- 资助金额:
$ 2.41万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
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