Controlling of Single Photon Source in Silicon Carbide

为了发现碳化硅（SiC）中作为单光子源的新缺陷，用2 MeV电子辐照半绝缘SiC晶片，然后在300 ~ 500 ℃的温度范围内在氩气中退火。结果，除了已报告为SiC中单光子源的Si空位（Vsi）发光外，即使在室温下也观察到670至700 nm波长区域的非常强的发光。通过低温下的光致发光测量，得出了这些发光的来源是带正电荷的碳反位-碳空位对（CsiVc）。利用共焦显微镜进行的反聚束测量表明，CsiVc在SiC中起单光子源的作用。

In order to find new defects which act as single photon sources in Silicon Carbide (SiC), semi-insulating SiC wafers were irradiated with 2 MeV electrons and subsequently annealed in Argon at temperature ranges between 300 and 500 C. As a results, in addition to luminescence from Si vacancies (Vsi) which have been reported as single photon source in SiC, the very strong luminescence at wavelength regions between 670 and 700 nm were observed even at room temperature. By the photo luminescence measurements at low temperature, it was concluded that the origin of those luminescence is positively charged carbon antisite – carbon vacancy pair (CsiVc). Also, it was revealed from antibunching measurements using a confocal microscope that CsiVc act as single photon source in SiC.