Controlling of Single Photon Source in Silicon Carbide

为了寻找碳化硅（SiC）中作为单光子源的新缺陷，用2 MeV的电子照射半绝缘SiC晶圆，然后在300 ~ 500℃的氩气中退火。结果表明，除了已报道的作为SiC单光子源的Si空位（Vsi）发光外，即使在室温下也能观察到670 ~ 700 nm波长区域的强发光。通过在低温下的光发光测量，得出了这些发光的来源是带正电的碳对碳空位对（CsiVc）。此外，通过共聚焦显微镜的反聚束测量发现，CsiVc在SiC中起单光子源的作用。

In order to find new defects which act as single photon sources in Silicon Carbide (SiC), semi-insulating SiC wafers were irradiated with 2 MeV electrons and subsequently annealed in Argon at temperature ranges between 300 and 500 C. As a results, in addition to luminescence from Si vacancies (Vsi) which have been reported as single photon source in SiC, the very strong luminescence at wavelength regions between 670 and 700 nm were observed even at room temperature. By the photo luminescence measurements at low temperature, it was concluded that the origin of those luminescence is positively charged carbon antisite – carbon vacancy pair (CsiVc). Also, it was revealed from antibunching measurements using a confocal microscope that CsiVc act as single photon source in SiC.