Controlling of Single Photon Source in Silicon Carbide

碳化硅中单光子源的控制

• 批准号: 24656025
• 负责人: OHSHIMA Takeshi
• 金额: $ 2.58万
• 依托单位: Japan Atomic Energy Agency
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24656025/
• 关键词: 炭化ケイ素; 欠陥エンジニアリング; スピン; 新機能材料; 量子コンピューティング; 単一光源欠陥中心

In order to find new defects which act as single photon sources in Silicon Carbide (SiC), semi-insulating SiC wafers were irradiated with 2 MeV electrons and subsequently annealed in Argon at temperature ranges between 300 and 500 C. As a results, in addition to luminescence from Si vacancies (Vsi) which have been reported as single photon source in SiC, the very strong luminescence at wavelength regions between 670 and 700 nm were observed even at room temperature. By the photo luminescence measurements at low temperature, it was concluded that the origin of those luminescence is positively charged carbon antisite – carbon vacancy pair (CsiVc). Also, it was revealed from antibunching measurements using a confocal microscope that CsiVc act as single photon source in SiC.

In order to find new defects which act as single photon sources in SiC, semi-insulating SiC wavers were irradiated with 2 MeV electrons and subsequently annealed in Argon at temperature ranges between 300 and 500 C. As a result, in addition to luminescence from Sivacancies (Vsi) which have been reported as single photon source in SiC, the very strong luminescence at wavelength regions between 670 and 700 nm They were即使在室温下也观察到。通过在低温下的照片发光测量结果，可以得出结论，这些发光的起源是带正电荷的碳反岩 - 碳空位对（CSIVC）。同样，使用共聚焦显微镜从抗挑战测量中揭示了它，即CSIVC充当SIC中的单个光子源。

项目成果

Optically Active Defect Centres in Silicon Carbide Devices

碳化硅器件中的光学活性缺陷中心

• 发表时间: 2014
• 作者: B.C. Johnson;N. Iwamoto;S. Castelletto;S. Onoda;T. Ohshima;T. Karle and J. C. McCallum
• 通讯作者: T. Karle and J. C. McCallum

Fabrication of Single Photon Centres in Silicon Carbide

碳化硅中单光子中心的制造

• DOI: 10.1109/commad.2012.6472328
• 发表时间: 2012
• 期刊: IEEE conference publication, Proceedings of 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
• 作者: B. C. Johnson;S. Castelletto;T. Ohshima. T. Umeda
• 通讯作者: T. Ohshima. T. Umeda

A silicon carbide room-temperature single-photon source

• DOI: 10.1038/nmat3806
• 发表时间: 2014-02-01
• 期刊: NATURE MATERIALS
• 影响因子: 41.2
• 作者: Castelletto, S.;Johnson, B. C.;Ohshima, T.
• 通讯作者: Ohshima, T.