Mechanism of the Destruction of Oxide on Silicon Carbide due to ChargeInduced by Ion Beams

离子束诱导电荷破坏碳化硅氧化物的机理

• 批准号: 21360471
• 负责人: OHSHIMA Takeshi
• 金额: $ 11.56万
• 依托单位: Japan Atomic Energy Agency
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360471/
• 关键词: 放射線工学; ビーム科学; 炭化ケイ素(SiC); MOSキャパシタ; 容量変化; ゲート酸化膜リーク電流; Mosキャパシタ; イオンビーム誘起過渡電流; 界面準位; 炭化ケイ素(Sic); イオン照射効果; 電荷収集; 結晶損傷; 界面準立

In order to understand the mechanism of heavy ion induced dielectric breakdown(SEGR) of Silicon Carbide(SiC) devices, the relationship between bias appied to gate oxide and charge induced in SiC MOS capacitors by heavy ions such as oxygen and nickel was revealed. By measuring the leakage current observed from gate oxide during ion irradiation, it was found that SEGR is triggered by dense ion-induced charge if the linier energy transfer(LET) of incident ions is large.

为了了解碳化硅（SIC）设备的重离子诱导的介电介质分解（SEGR）的机理，揭示了氧气和镍等重离子在SIC MOS电容器中诱导的偏置与电荷诱导的关系之间的关系。通过测量离子辐照过程中从氧化物氧化物观察到的泄漏电流，发现如果入射离子的统一能传递（LET）较大，则通过致密离子诱导的电荷触发SEGR。

项目成果

ingle-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p^+n Diode Irradiated With High-Energy Electrons

高能电子辐照的 6H-SiC p^ n 二极管的单阿尔法粒子诱导电荷瞬态光谱

• 发表时间: 2011
• 期刊: IEEE Transaction on Nuclear Science
• 作者: N. Iwamoto;A. Koizumi;S. Onoda;T. Makino;T. Ohshima;K. Kojima;S. Koike;K. Uchida;and S. Nozaki
• 通讯作者: and S. Nozaki

Enhanced Charge Collection in Drain Contact of 6H-SiC MOSFETs Induced by Heavy Ion Microbeam

重离子微束诱导的 6H-SiC MOSFET 漏极接触中的电荷收集增强

• 发表时间: 2010
• 期刊: Proc. of 9th Internat. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
• 作者: S. Onoda;G. Vizkelethy;T. Makino;N. Iwamoto;K. Kojima;S. Nozaki;T. Ohshima
• 通讯作者: T. Ohshima

Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors

碳化硅金属氧化物半导体电容器产生的离子束感应瞬态电流峰值高度可刷新降低

• 发表时间: 2011
• 期刊: AIP conference proceedings 1336 Application of Accelerators in Research and Industry
• 作者: T. Ohshima;N. Iwamoto;S. Onoda;T. Makino;M. Deki;S. Nozaki
• 通讯作者: S. Nozaki

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-rays

伽马射线照射下 SiC MOS 电容器中的氧离子感应电荷

• 发表时间: 2011
• 期刊: Materials Science Forum
• 作者: T. Ohshima;N. Iwamoto;S. Onoda;T. Makino;S. Nozaki;K. Kojima
• 通讯作者: K. Kojima

Change in Current Induced from Silicon Carbide Metal. Oxide-Semiconductor Capacitors by Oxygen Ions

碳化硅金属引起的电流变化。

• 发表时间: 2010
• 期刊: Proc. of 9th Internat. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
• 作者: T. Ohshima;N. Iwamoto;S. Onoda;T. Makino;M. Deki;S. Nozaki
• 通讯作者: S. Nozaki