Mechanism of the Destruction of Oxide on Silicon Carbide due to ChargeInduced by Ion Beams

为了了解碳化硅（SiC）器件的重离子诱导介电击穿（SEGR）机理，揭示了栅极氧化物的偏压与氧、镍等重离子在SiC MOS电容器中诱导的电荷之间的关系。通过测量离子辐照过程中栅极氧化物所观察到的泄漏电流，发现当入射离子的线性能量转移（LET）较大时，密集离子诱导电荷会触发SEGR。

In order to understand the mechanism of heavy ion induced dielectric breakdown(SEGR) of Silicon Carbide(SiC) devices, the relationship between bias appied to gate oxide and charge induced in SiC MOS capacitors by heavy ions such as oxygen and nickel was revealed. By measuring the leakage current observed from gate oxide during ion irradiation, it was found that SEGR is triggered by dense ion-induced charge if the linier energy transfer(LET) of incident ions is large.