A high efficiency III nitride solar cell with graded composition top layer
A high efficiency III nitride solar cell with graded composition top layer
批准号:
24656019
负责人:
SAWAKI Nobuhiko
金额:
$2.5万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2015-03-31
中文摘要
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英文摘要
期刊论文(25)
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愛知工業大学学術情報リポジトリ
爱知工业大学学术信息库
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
FTIR spectra in a heavily carbon doped (0001)GaN
重碳掺杂 (0001)GaN 的 FTIR 光谱
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano]
通讯作者:
and H.Amano
A high efficiency InGaN solar cell with graded composition p-InGaN top layer
具有梯度成分 p-InGaN 顶层的高效 InGaN 太阳能电池
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Ryosuke Kikuchi, Satoshi Usui, Kuniaki Tanaka, and Hiroaki Usui, T.Fujisawa and N.Sawaki,]
通讯作者:
T.Fujisawa and N.Sawaki,
グリーンエネルギー研究拠点
绿色能源研究中心
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
DOI:
10.1016/j.jcrysgro.2014.11.024
发表时间:
2015-03
期刊:
Journal of Crystal Growth
影响因子:
1.8
作者:
[S. Ito;H. Kobayashi;K. Araki;K. Suzuki;N. Sawaki;K. Yamashita;Y. Honda;H. Amano]
通讯作者:
S. Ito;H. Kobayashi;K. Araki;K. Suzuki;N. Sawaki;K. Yamashita;Y. Honda;H. Amano
共 23 条
Growth of high quality GaN on an Si substrate
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批准号:22360009
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.73万
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财政年份:2010
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负责人:SAWAKI Nobuhiko
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依托单位:
Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate
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批准号:16106001
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$74.21万
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财政年份:2004
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负责人:SAWAKI Nobuhiko
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依托单位:
SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATE
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批准号:13305023
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$34.69万
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财政年份:2001
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负责人:SAWAKI Nobuhiko
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依托单位:
Non-linear optical devices utilizing triply coupled asymmetric GaAs quantum wells
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批准号:10555103
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.26万
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财政年份:1998
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负责人:SAWAKI Nobuhiko
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依托单位:
Selective Growth of GaN pyramids and study of their optical and electronic properties
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批准号:10450117
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.66万
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财政年份:1998
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负责人:SAWAKI Nobuhiko
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依托单位:
Resonance of Electronic States and Optical Non-linearity in Coupled Quantum Well Structures
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批准号:05452112
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.22万
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财政年份:1993
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负责人:SAWAKI Nobuhiko
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依托单位:
Tunneling Phenomena in GaAs/AlGaAs Double Quantum Well Structures
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批准号:03650257
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1991
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负责人:SAWAKI Nobuhiko
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依托单位:
Study of hot electron effect in sub-micron semiconductor devices.
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批准号:60550228
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1985
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负责人:SAWAKI Nobuhiko
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依托单位:
海外基金