课题基金 / 基金详情

Resonance of Electronic States and Optical Non-linearity in Coupled Quantum Well Structures

Resonance of Electronic States and Optical Non-linearity in Coupled Quantum Well Structures
耦合量子阱结构中的电子态共振和光学非线性
批准号:
05452112
负责人:
SAWAKI Nobuhiko
金额:
$4.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1995

项目摘要

项目成果

SAWAKI Nobuhiko的其他基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
The purpose of the research is to clarify the optical nonlinearity in a strongly coupled triple quantum well structure, where the application of an external field changes the situation of resonance of the electronic states. Thus the exciton oscillator strength should be a strong function of the external field. Since the electrons and holes have different tunneling escape times, after the excitation of carriers in a well by a femtosecond laser pulse, electrons will escape to the other well faster than holes, resulting the build up of internal field across the wells. This induced field could affect the change of the oscillator strength of excitons. Since the induced field will increase by increasing the input optical power, we can expect strong optical nonlinearity which will be responsible in the femtosecond region.A GaAs/AlGaAs triple quantum well structure was made by MBE on a semiinsulating GaAs. The optical spectra was investigated using femtosecond laser pulse. The transmission of the laser light through the sample was investigated at various wave lengths. The transmittance was found to be a strong function of the input intensity. Above a critical power, the transmittance is decreased as the increase of the input power. The nonlinear behavior is enhanced near the anti-crossing energy associated with the triple resonance, which is in good agreement with the theoretical prediction.
期刊论文(54)
专著(0)
科研奖励(0)
会议论文
M.Taya: "Tunneling escape time in quasi-zero-dimensional quantum wells" Extnd.Abstract 2nd Intern.Workshop on Quantum Functional Devices,Matsue. 64-65 (1995)
M.Taya:“准零维量子阱中的隧道逃逸时间”Extnd.Abstract 第二届实习生。量子功能器件研讨会,松江。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
T.Sugiura: "Raman scattering study of TO phonon modes in InGaAsP/GaAs" Semicond.Sci.& Technol.9. 1800-1804 (1994)
T.Sugiura:“InGaAsP/GaAs 中 TO 声子模式的拉曼散射研究”Semicond.Sci。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
H.Goto: "Negative magnetoresisitance in a Si-atomic layer doped GaAs" Proc.Intern.Symp.on GaAs and Related Compound. (印刷中). (1995)
H.Goto:“硅原子层掺杂 GaAs 中的负磁阻”Proc.Intern.Symp.on GaAs 和相关化合物(出版中)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
H.Ahn, M.Yamaguchi, T.Kidokoro, N.Sawaki, T.Suzuki, and K.Hara: "Optical Non-linersity in an Asymmetric Triple Quantm Well Structure" Extnd.Abstract Intern.Workshop Femtosecond Tech.Tsukuba. 100. (1996)
H.Ahn、M.Yamaguchi、T.Kidokoro、N.Sawaki、T.Suzuki 和 K.Hara:“非对称三量子阱结构中的光学非线性”Extnd.Abstract Intern.Workshop Femtosecond Tech.Tsukuba。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
24
    A high efficiency III nitride solar cell with graded composition top layer
    • 批准号:
      24656019
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.5万
    • 财政年份:
      2012
    • 负责人:
      SAWAKI Nobuhiko
    • 依托单位:
    Growth of high quality GaN on an Si substrate
    • 批准号:
      22360009
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.73万
    • 财政年份:
      2010
    • 负责人:
      SAWAKI Nobuhiko
    • 依托单位:
    Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate
    • 批准号:
      16106001
    • 项目类别:
      Grant-in-Aid for Scientific Research (S)
    • 资助金额:
      $74.21万
    • 财政年份:
      2004
    • 负责人:
      SAWAKI Nobuhiko
    • 依托单位:
    SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATE
    • 批准号:
      13305023
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $34.69万
    • 财政年份:
      2001
    • 负责人:
      SAWAKI Nobuhiko
    • 依托单位: