Selective Growth of GaN pyramids and study of their optical and electronic properties

GaN金字塔的选择性生长及其光学和电子特性的研究

• 批准号: 10450117
• 负责人: SAWAKI Nobuhiko
• 金额: $ 9.66万
• 依托单位: NAGOYA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10450117/
• 关键词: III nitrides; selective growth; nano-structure; quantum well; defects; off axis substrate; luminescence; field emitter; TEM; ホトルミネッセンス; カソードルミネッセンス; GaN; 励起子; サブミクロン微細構造; ナノメトール量子構造; バンド端発光; 格子歪み

GaN and its related compound has given possibilities in the field of optical devices in the region of visible to ultra-violet wavelength as well as electron devices. But almost all the devices so far are on the sapphire substrates. In this study, the selective growth of GaN on a silicon substrate was attempted.(1) Selective growth of hexagonal pyramidal structures and stripe structures were tested on sapphire substrates by MOVPE.In the lateral overgrowth region, unintentional doping of impurities was observed. But the dislocations were found to decline to the horizontal direction and disappeared on the top of the sample.(2) The selective growth of GaN pyramids and stripes was achieved on silicon substrates for the first time. The high quality of the crystal was obtained by controlling the growth conditions for the initial stage of the intermediate layer.(3) An amorphous layer on the order of 5 nm was found between the GaN and the silicon substrate. But the high resolution TEM image showed that the growth of GaN was epitaxal.(4) On the GaN stripe structure, the growth of GaN/AlGaN hetero-structure was attempted, and the micro-sized quantum wells were obtained on silicon substrate for the first time.(5) Selective growth of GaN was attempted on a patterned silicon substrate, which was fabricated by micro-machining technology. Growth of single crystalline GaN of which c-axis is not normal to the substrate surface was achieved for the first time.(6) By reducing the size of window area, the formation of the several seeds was refrained and high quality GaN nano-structure was achieved on silicon substrates.

GaN及其相关化合物为可见光到紫外光波段的光学器件和电子器件领域提供了可能性。但到目前为止，几乎所有的设备都是在蓝宝石衬底上。本研究尝试在硅衬底上选择性生长GaN。(1)用MOVPE方法在蓝宝石衬底上选择性生长六方金字塔结构和条状结构，在横向过生长区观察到无意的杂质掺杂。(2)首次在硅衬底上实现了GaN金字塔和条纹的选择性生长。通过控制中间层初始阶段的生长条件，获得了高质量的晶体。(3)在GaN和硅衬底之间发现了一层5 nm量级的非晶层。在GaN条形结构上，尝试了GaN/AlGaN异质结的生长，并首次在硅衬底上获得了微米级的量子阱。(5)采用微机械加工技术在图案化硅衬底上进行了GaN的选择性生长。首次实现了c轴与衬底表面不垂直的单晶GaN的生长。(6)通过减小窗口面积，抑制了几种晶种的形成，在硅衬底上获得了高质量的GaN纳米结构。

项目成果

Y.Kawaguchi: "Selective area growth and epitaxial lateral overgrowth of wurtzite GaN on (111)Si substrate by metalorganic vapor phase epitaxy"Institute of Physics Conference Series. 162. 687-692 (1999)

Y.Kawaguchi：“通过金属有机气相外延在（111）Si衬底上选择区域生长和外延横向过度生长纤锌矿GaN”物理研究所会议系列。

S.Tanaka, Y.Kawaguchi, N.Sawaki, M.Hibino, and K.Hiramatsu: "Defect structure in selective area growth GaN pyramida on (111) Si substrate"Appl.Phys.Lett.. Vol.76. 2701-2703 (2000)

S.Tanaka、Y.Kawaguchi、N.Sawaki、M.Hibino 和 K.Hiramatsu：“(111) Si 衬底上选择性区域生长 GaN 金字塔中的缺陷结构”Appl.Phys.Lett.. Vol.76。

Y.Kawaguchi: "Selective area growth and epitaxial lateral overgrowth of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy" 25th International Symposium on Compound Semiconductors,Nara.Tup-29 (1998)

Y.Kawaguchi：“通过金属有机气相外延在 (111) Si 衬底上选择纤锌矿 GaN 的选择性区域生长和外延横向过度生长”第 25 届国际化合物半导体研讨会，Nara.Tup-29 (1998)

S.Tanaka.: "Defect structure in selective area growth GaN pyramida on (111) Si substrate."Appl.Phys.Lett.. 76. 2701-2703 (2000)

S.Tanaka.：“(111) Si 衬底上选择性区域生长 GaN 金字塔中的缺陷结构。”Appl.Phys.Lett.. 76. 2701-2703 (2000)

S.Tanaka,: "Transmission electron microscopic study of Selective area growth of GaN on(111)Si using AlGaN as an intermediate layer,"IPAP Conf Series. 1. 300-303 (2000)

S.Tanaka，：“使用 AlGaN 作为中间层对 (111)Si 上 GaN 选择性区域生长的透射电子显微镜研究”，IPAP Conf 系列。