CVD method diverted from hydrazine thruster technique for the growth of gallium nitride thin film

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This research was carried out to establish a new CVD method diverted from hydrazine thruster technique. The preparations of zirconia catalyst dispersed with Ru nanoparticles and complex catalyst comprised of porous Ir fibers dispersed with the Ru nanoparticles were tried. Although the preparation of the zirconia catalyst dispersed with Ru nanoparticles was successful, the preparation of the complex catalyst was unsuccessful. By the supply of hydrazine gas with pulse mode to the Ru nanoparticle dispersed zirconia catalyst, stable exothermic reaction took place, and high-temperature nitrogen precursors were generated. GaN epitaxial films were grown on c-plane sapphire substrates at 600 degree C using the high-energy GaN precursors generated by a reaction between the high-temperature nitrogen precursors and trimethylgallium. The GaN film exhibited a sharp bandedge emission at 364 nm, although a broad emission peak was also observed at 600 nm.