权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Low temperature growth of 3C-SiC crystal by hydrogen radical assisted plasma enhanced chemical vapor deposition

氢自由基辅助等离子体增强化学气相沉积低温生长3C-SiC晶体

基本信息

批准号：
09650028
负责人：
YASUI Kanji
金额：
$ 1.79万
依托单位：
Nagaoka Universiyt of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650028/
关键词：
hydrogen radical plasma CVD cubic SiC epitaxial growth 立方晶炭素ケイ素

项目摘要

The objective of this project is to realize the low temperature growth of 3C-SiC and epitaxial growth of it on Si substrates utilizing the hydrogen radicals generated by rf plasma.In 1997, as a result of the experiments of crystal growth by triode plasma CVD method and by hybrid plasma CVD method allow temperature (<1000ﾟC) using dimethyichiorosilane and dimethylsilane as source gases, it became clear that the triode plasma CVD method using dimethylsilane was effective and the crystal growth at 600ﾟCwas possible utilizing the method. The crystal growth of SiC at the low temperature was realized under the conditions of low plasma space potential and low electron temperature (<1eV) in the vicinity of the substrate surface. Reducing the hydrogen ion acceralation at sheath region by the suppression of the rf vibration of plasma space potential , the crystallinity of SiC films was further improved. Epitaxial growth on Si(100) and (111) was also successful at 1000ﾟC.Using the triode plasma CVD method, the surface morphplogy of SiC films was more satisfactory than that grown by thermal CVD method.In 1998, the conditions of the dilution ratio of source gas by hydrogen and the reaction pressure were extensively controlled using the turbo molecular pump, which has high evacuation rate, for the growth of epitaxial SiC films. As a result of this experiment, highly oriented SiC epitaxial films with best crystallinity were obtained at reaction pressure of 0,3 Torr and at high dilution rate of hydrogen (>200). By changing the hydrogen dilution ratio, the residual stress of SiC on Si (111) was able to vary from coinpresive to tensile. By control the hydrogen dilution ratio, SiC epitaxial film on Si substrates with low residual stress was able to be obtained.

1997年，在以二甲基氯硅烷和二甲基硅烷为原料气体的条件下，通过等离子体CVD法和混合等离子体CVD法的晶体生长实验，确定了晶体生长的允许温度（<1000 ℃），很明显，使用二甲基硅烷的CVD等离子体方法是有效的，并且利用该方法在600 ℃下晶体生长是可能的。SiC晶体的低温生长是在低等离子体空间电位和衬底表面附近低电子温度（<1eV）的条件下实现的。通过抑制等离子体空间电位的高频振荡，降低了鞘层区氢离子的加速，进一步提高了SiC薄膜的结晶度。在1000 ℃下，在Si（100）和（111）衬底上也成功地进行了外延生长。采用等离子体CVD方法，SiC薄膜的表面形貌比热CVD方法更令人满意。1998年，利用涡轮分子泵，广泛地控制了源气体被氢气稀释的比例和反应压力的条件，该涡轮分子泵具有高抽真空速率，用于外延SiC薄膜的生长。作为该实验的结果，在0.3Torr的反应压力和高氢气稀释率（>200）下获得具有最佳结晶度的高度取向的SiC外延膜。通过改变氢稀释比，Si（111）上SiC的残余应力能够从压应力变为拉应力。通过控制氢稀释比，可以在Si衬底上获得低残余应力的SiC外延膜。