Formation of 3-dimensional (3D) Si quantum dot arrays using block copolymer self-assembly and its application to 3D quantum dot solar cell

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We studied a formation of multi-tunnel junction PIN type solar cell substrate and masking and etching of very fine cylinder structure of the substrate for three-dimensional (3D) quantum dot solar cell. In the former, we proposed structure of 3D quantum dot solar cell and process for its fabrication using LP-CVD (Low pressure chemical vapor deposition), thermal oxidation and impurity diffusion. After the fabrications, we evaluated the solar cell properties and obtained adaptive structure with 1nm-thickness in LP-CVD SiO2 layer for tunneling current. Furthermore, we obtained the substrate with 3-PIN-multi-layers structure for 3D solar cell. In the latter, we developed very fine dot pattern formation using self-assembly with PS-PDMS block copolymer, multi-resist method with thin Si layer and carbon layer to transfer it to carbon dot pattern for etching mask, and reactive-ion-etching (RIE) of the Si substrate as very fine cylinders with multi-tunnel junction PIN type solar cell.