Synthesis of p-type transparent conductive Ti-oxides based films utilizing interface reaction

利用界面反应合成p型透明导电钛氧化物基薄膜

• 批准号: 25600040
• 负责人: ITO Kazuhiro
• 金额: $ 2.58万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2013
• 资助国家: 日本
• 起止时间: 2013-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-25600040/
• 关键词: 透明導電膜; Ti基酸化物; p型伝導; 界面反応

We recently found that an amorphous Ti oxide layer consisting of mainly TiO2 forming at the interface between Cu(Ti) and ITO would be a p-type transparent conductive film in the previous study on contact resistance at the Cu(Ti)/ITO junction. Thus, purpose of the present study is to develop a synthesis of the reaction film on glass substrates and to characterize its optical and electrical properties. Cu(10 at.%Ti) alloy films were deposited on 40 nm-thick ITO/Glass substrates. The Cu(Ti)/ITO/Glass samples were annealed in ultrahigh vacuum at 400C for 6 h. The amorphous Ti-oxide layer with about 20 nm in thickness formed on the glass substrate, and the ITO layer was eliminated due to the reaction. The amorphous Ti-oxide films exhibited transmittance of about 70% in visible light region, sheet resistance of about 1.0 x 10^3 ohm/sq., positive Hall coefficient, and carrier density of about 1.0 x 10^22 cm^-3 at RT. The univalent cation Cu+ would be essential for the p-type conductivity.

我们最近发现，在Cu（Ti）和ITO之间的界面处形成的主要由TiO 2组成的非晶Ti氧化物层将是p型透明导电膜，在Cu（Ti）/ITO结处的接触电阻的先前研究中。因此，本研究的目的是开发一种在玻璃基板上的反应膜的合成和表征其光学和电学性质。Cu（10原子% Ti）合金薄膜沉积在40 nm厚的ITO/玻璃基板上。Cu（Ti）/ITO/Glass样品在400 ℃下真空退火6 h。在玻璃衬底上形成厚度约为20 nm的非晶Ti氧化物层，并且由于反应，ITO层被消除。非晶Ti氧化物膜在可见光区表现出约70%的透射率，约1.0 × 10^3欧姆/平方的薄层电阻，正霍尔系数，室温下载流子密度约为1.0 x 10^22 cm^-3。单价阳离子Cu+对于p型导电性至关重要。

项目成果

p型Ti酸化物透明導電膜の作製と物性評価

p型氧化钛透明导电薄膜的制备及物性评价

• 发表时间: 2013
• 作者: 京大工林徳樺(現クボタ);阪大接合研伊藤和博;小濱和之;神鋼リサーチ大西隆;京大工白井泰治;立命館村上正紀
• 通讯作者: 立命館村上正紀

ｐ型Ti酸化物透明導電膜の作製と物性評価

p型氧化钛透明导电薄膜的制备及物性评价

• 发表时间: 2013
• 作者: 京大工林徳樺(現クボタ);阪大接合研伊藤和博;小濱和之;神鋼リサーチ大西隆;京大工白井泰治;立命館村上正紀;Hiroaki Kato;Yoshinori Kohashi;小濱 和之
• 通讯作者: 小濱 和之

Synthesis of Low Contact-Resistance Cu(Ti) /ITO Junctions

低接触电阻 Cu(Ti)/ITO 结的合成

• 发表时间: 2014
• 作者: Kazuhiro Ito;W. Nakagawa;Y. Shirai;M. Murakami
• 通讯作者: M. Murakami

Synthesis of low contact-resistance Cu(Ti)/ITO junctions

低接触电阻 Cu(Ti)/ITO 结的合成

• 发表时间: 2014
• 作者: Kazuhiro Ito;W. Nakagawa;Y. Shirai;M. Murakami;伊藤 和博
• 通讯作者: 伊藤 和博