Cutting Tool Materials of Cubic Boron Nitride Single Crystal

立方氮化硼单晶切削刀具材料

• 批准号: 01850020
• 负责人: FUKUNAGA Osamu
• 金额: $ 6.21万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01850020/
• 关键词: Cutting tool; Cubic BN; Single crystal; Solvent grwoth; High pressure growth; Alkali-B-N solvent; Phase boundary; Seeded growth; 単結晶育成溶媒; 合成圧力-温度領域; 単結晶育成法; 超硬盾材料; IIIーV化合物; 立方晶チッ化ホウ素; 立方晶チッ化ホウ素の合成方法; 超高圧合成; 単結晶切削工具

Single crystal cBN has many problem to solve for practical application of cutting tools. In 1987, the reporter's groupe has succeeded to growth single crystal cBN at first time in the world. High pressure high temperature of cBN growth is more difficult than the diamond growth. The basic data for the crystal growth of cBN are lacked. This study covers basic data for cBN growth. cBN cannot grow at non-equiriblium condition, then the stable P-T condition of cBN must be determined by high pressure experiments. We determined phase boundary curve as P=T/200 - 3.5(Gpa, C). It was found that cBN is stable to 700 C at normal pressure.BN solvents for the crystal growth were selected from alkali and alkali-earth boronnitride. cBN synthesized P-T regions were determined for various solvents-BN systems by high pressure experiments. We found that cBN was synthesized above 4-5 GPa and 100-1200 C. The minimum temperature of cBN synthesis coincides the minimum liquidus line of the system. Growth of cBN, however, was observed at 1700 C or higher temperature. Crystal growth of cBN was carried out using seed crystals of diamond and cBN. We found that cBN film can be grow at 1200-1300 C region. This new finding provides basic technology of cBN grow for the application of cutting tools.

单晶cBN在刀具的实际应用中还有许多问题需要解决。1987年，记者组在世界上首次成功地生长出立方氮化硼单晶。高压高温下生长cBN比生长金刚石更困难。缺乏cBN晶体生长的基础数据。本研究涵盖了cBN生长的基本数据。cBN不能在非等氮条件下生长，因此必须通过高压实验确定cBN的稳定P-T条件。确定了相界曲线为P=T/200 - 3.5（Gpa，C）。实验结果表明，cBN在常压下能稳定生长到700 ℃，BN晶体生长所用的溶剂为碱金属和碱土金属氮化硼。通过高压实验确定了不同溶剂-BN体系合成cBN的P-T区。我们发现cBN的合成温度在100-1200 ℃，压力在4- 5GPa之间。合成cBN的最低温度与体系的最低液相线重合。然而，在1700 ℃或更高的温度下观察到cBN的生长。使用金刚石和cBN的晶种进行cBN的晶体生长。我们发现cBN薄膜可以在1200-1300 ℃生长。这一新发现为cBN生长在刀具上的应用提供了技术基础。

项目成果

O,Fukunaga: "Development of New Diamond.Materials" Proc,Intnl,Workshop Fine Ceramics Number1.New Processing and Properties of Fine Ceramics. 193-203 (1990)

O，Fukunaga：“新金刚石材料的开发”Proc，Intnl，研讨会精细陶瓷第 1 号。精细陶瓷的新加工和性能。

J. Maki, H. Ikawa and O. Fukunaga: "Thermodynamic Calculation of Cubic/Hexagonal Boron Nitride Equilibrium Line" High Press. Conf. Japan. 28-29 (1990)

J. Maki、H. Ikawa 和 O. Fukunaga：“立方/六方氮化硼平衡线的热力学计算”高出版社。

M.Miyamoto: "Morphology and Formation process of Diamond from Glassy Carbon" Journal of Crystal Growth. 97. 731-738 (1989)

M.Miyamoto：“玻璃碳金刚石的形态和形成过程”晶体生长杂志。

S. Nakano, M. Kanzaki, H. Ikawa and O. Fukunaga: "Synthesis of cBN by Catalytic Effect and Decomposistion of Metal Boron Nitrides" High Press. conf. Japan. 138-139 (1991)

S. Nakano、M. Kanzaki、H. Ikawa 和 O. Fukunaga：“通过金属氮化硼的催化作用和分解合成立方氮化硼”高出版社。

S.Nakano,O.Fukunaga: "New Concept of the Synthesis of Cubic Boron Nitride" Proceeding of AIRAPT Conf.(1991).

S.Nakano,O.Fukunaga：“合成立方氮化硼的新概念”AIRAPT Conf.（1991）论文集。