Compositional Design of Zirconium Titanate Solid Solution for Microwave Dielectric Material and Low Expansive Material

微波介质材料和低膨胀材料用钛酸锆固溶体的成分设计

基本信息

  • 批准号:
    01550590
  • 负责人:
  • 金额:
    $ 1.34万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1989
  • 资助国家:
    日本
  • 起止时间:
    1989 至 1990
  • 项目状态:
    已结题

项目摘要

1. Dielectric Property of Solid Solutions in the ZrTiO_4-HfTiO_4 SystemWell sintered pellets of end compositions and solid solutions were suffered from either of the following two heat treatment. Those two were quenching in air after heating at 1300^゚C (abbreviated as quenched sample) and slow furnace cooling to 900^゚C after heating at 1200^゚ (abbreviated as cooled sample). Dielectric properties -- relative permittivity (K') at 1 kHz and GHz, temperature coefficient of capacitance (TCC), coefficient of dielectric loss (tan delta), and temperature coefficient of resonance frequency (TCR) -- of quenched and cooled samples were measured. Results are summarized as follow.(1) Realative permittivity of the quenched sample decreased almost linearly with increasing Hf content.(2) The composition vs. K' relation of the cooled sample was different significantly from that of the quenched sample taking a peak value of K' at Zr_<0.75>Hf_<0.25>TiO_4.(3) The composition vs. TCC relations of the quenc … More hed and cooled samples were similar to those written in (1) and (2), respectively.2. Dielectric Property of Solid Solutions in the ZrTiO_4-SnO_2 SystemA research analogical to that mentioned in 1. was made to this system also, and resembling respective relations to (1), (2), and (3) were found. These coincidence is that predicted by the working hypothesis on this compound. Accordingly, a new composition of microwave dielectric resonator was presented. Further, the hypothesis which is powerful to predict the phase transformation and thermal expansion, has been revealed might be effective to explain dielectric properties of these compounds.3. Design of Low Expansive Composition by the Working HypothesisPhase transformations and thermal expansion properties were investigated for compounds in systems ZrTiO_4-In_2O_3-Sb_2O_5 and ZrTiO_4-In_2O_3-Ta_2O_5. The thermal expansions of ZrTi_<0.2>In_<0.4>Ta_<0.4>O_4 and ZrTi0.1In0.45Ta0.4504 were found smaller than that of HfTi04. Further, the fact was that predicted by the hypothesis. Less
1. ZrTiO_4-HfTiO_4系固溶体的介电性能最终组成和固溶体的良好烧结的颗粒经受以下两种热处理中的任一种。这两个样品在1300 ° C加热后在空气中淬火(简称为淬火样品),并在1200 ° C加热后缓慢炉冷至900 ° C(简称为冷却样品)。测量淬火和冷却样品的介电性质-在1 kHz和GHz下的相对介电常数(K ')、电容温度系数(TCC)、介电损耗系数(tan δ)和谐振频率温度系数(TCR)。结果总结如下。(1)淬火样品的相对介电常数随Hf含量的增加几乎呈线性下降。(2)冷却样品的成分-K'关系明显不同于淬火样品,K'在Zr_<0.75>Hf_<0.25>TiO_4处出现峰值。(3)淬火油的成分与TCC关系 ...更多信息 加热和冷却的样品分别类似于(1)和(2)中所述的那些。ZrTiO_4-SnO_2系固溶体的介电性质对该体系也作了类似的研究,发现与(1)、(2)和(3)的关系相似,这些一致性与对该化合物的工作假设所预言的一致性一致。据此,提出了一种新的微波介质谐振器结构。此外,该假设对预测相变和热膨胀具有较强的预测能力,可能对解释这些化合物的介电性能具有一定的作用.研究了ZrTiO_4-In_2O_3-Sb_2O_5和ZrTiO_4-In_2O_3-Ta_2O_5系统化合物的相变和热膨胀性能。发现ZrTi_<0.2>In_<0.4>Ta_<0.4>O_4和ZrTi0.1In0.45Ta0.4504的热膨胀小于HfTi 〇 4的热膨胀。而且,事实也正是假设所预测的。少

项目成果

期刊论文数量(16)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H. Ikawa, T. Yamada, K. Kojima and S. Matsumoto: "XPS Study of High and Low Temperature Forms of ZrTiO_4" Journal of the American Ceramic Society.
H. Ikawa、T. Yamada、K. Kojima 和 S. Matsumoto:“ZrTiO_4 高温和低温形式的 XPS 研究”美国陶瓷学会杂志。
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    0
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井川 博行・成田 博・福長 脩: "ZrTiO_4ーHfTiO_4固溶体の高周波誘電性" 日本セラミックス協会学術論文誌. 98. 860-863 (1990)
Hiroyuki Ikawa、Hiroshi Narita、Osamu Fukunaga:“ZrTiO_4-HfTiO_4 固溶体的高频介电性能”日本陶瓷学会杂志 98. 860-863 (1990)。
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    0
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H. Ikawa, T. Yamada, K. Urabe and O. Fukunaga: "Thermal Expansion of Solid Solutions in the ZrTiO_4-In_2O_3-M_2O_5 (M=Sb, Ta) System" Journal of the American Ceramic Society.
H. Ikawa、T. Yamada、K. Urabe 和 O. Fukunaga:“ZrTiO_4-In_2O_3-M_2O_5 (M=Sb, Ta) 系统中固溶体的热膨胀”美国陶瓷学会杂志。
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
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  • 通讯作者:
H.Ikawa: "Dielectric Properties of HfTiO_4-Zrtio_4 Solid Solutions" Proceeding of Ceramic Science and Technology Congress(1989) Anaheim C.A.USA. (1989)
H.Ikawa:“HfTiO_4-Zrtio_4 固溶体的介电性能”陶瓷科学技术大会论文集(1989)美国阿纳海姆。
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    0
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  • 通讯作者:
H. Ikawa, H. Narita, O. Fukunaga and R. E. Neunham: "Materials and Processes for Microelectronic System-Ceramic Transaction Vol. 15" The American Ceramic Society Inc.(1990)
H. Ikawa、H. Narita、O. Fukunaga 和 R. E. Neunham:“微电子系统材料和工艺 - 陶瓷交易第 15 卷”美国陶瓷协会 (1990)
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    0
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FUKUNAGA Osamu其他文献

FUKUNAGA Osamu的其他文献

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{{ truncateString('FUKUNAGA Osamu', 18)}}的其他基金

Synthesis and growth mechanism of diamond and cubic boron nitride
金刚石和立方氮化硼的合成及生长机理
  • 批准号:
    06403016
  • 财政年份:
    1994
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Developments of Composite and Bondiing Materials Prepared by High Pressure Process
高压复合材料和粘接材料的研究进展
  • 批准号:
    05555168
  • 财政年份:
    1993
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Synthesis and Characterization of High Pure Diamaond Single Crystal
高纯金刚石单晶的合成与表征
  • 批准号:
    04453067
  • 财政年份:
    1992
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Cutting Tool Materials of Cubic Boron Nitride Single Crystal
立方氮化硼单晶切削刀具材料
  • 批准号:
    01850020
  • 财政年份:
    1989
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

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Collaborative Research: Martensitic Transformations in Paraelectric Shape Memory Ceramics Activated by an Electric Field
合作研究:电场激活顺电形状记忆陶瓷中的马氏体转变
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    2204638
  • 财政年份:
    2022
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Collaborative Research: Martensitic Transformations in Paraelectric Shape Memory Ceramics Activated by an Electric Field
合作研究:电场激活顺电形状记忆陶瓷中的马氏体转变
  • 批准号:
    2204644
  • 财政年份:
    2022
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Development of Quantum Computing System Based on Ferroelectric/Paraelectric Stacked Waveguides
基于铁电/顺电堆叠波导的量子计算系统研制
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    17H01063
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Universal understanding of pressure-induced quantum paraelectric state
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    09044049
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    1997
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    $ 1.34万
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CAREER: Atomic-Scale Optical Microscopy of Ferroelectric, Quantum Paraelectric and Ferromagnetic Films
职业:铁电、量子顺电和铁磁薄膜的原子尺度光学显微镜
  • 批准号:
    9701725
  • 财政年份:
    1997
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    $ 1.34万
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Application of Ferroelectric and High Paraelectric Materials to the Design of High-Transconductance HFET's with Low 1/f Noise and Low Gate Current
铁电和高顺电材料在低 1/f 噪声和低栅极电流的高跨导 HFET 设计中的应用
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    9712343
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    1997
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